頁 67 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  67/158
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SGB15N60HSATMA1
Infineon Technologies

IGBT 600V 27A 138W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
  • Power - Max: 138W
  • Switching Energy: 530µJ
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 13ns/209ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,912
600V
27A
60A
3.15V @ 15V, 15A
138W
530µJ
Standard
80nC
13ns/209ns
400V, 15A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IKU06N60RBKMA1
Infineon Technologies

IGBT 600V 12A 100W TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 330µJ
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PG-TO251-3
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存2,784
600V
12A
18A
2.1V @ 15V, 6A
100W
330µJ
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
hot NGTB40N120LWG
ON Semiconductor

IGBT 1200V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 320A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
  • Power - Max: 260W
  • Switching Energy: 5.5mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 140ns/360ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存5,456
1200V
80A
320A
2.35V @ 15V, 40A
260W
5.5mJ (on), 1.4mJ (off)
Standard
420nC
140ns/360ns
600V, 40A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
HGT1S12N60A4S9A
Fairchild/ON Semiconductor

IGBT 600V 54A 167W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 167W
  • Switching Energy: 55µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 78nC
  • Td (on/off) @ 25°C: 17ns/96ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,432
600V
54A
96A
2.7V @ 15V, 12A
167W
55µJ (on), 50µJ (off)
Standard
78nC
17ns/96ns
390V, 12A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXGK60N60B2D1
IXYS

IGBT 600V 75A 500W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封裝: TO-264-3, TO-264AA
庫存6,208
600V
75A
300A
1.8V @ 15V, 50A
500W
1mJ (off)
Standard
170nC
28ns/160ns
400V, 50A, 3.3 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
ISL9V3036P3
Fairchild/ON Semiconductor

IGBT 360V 21A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存7,504
360V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot SGF23N60UFDM1TU
Fairchild/ON Semiconductor

IGBT 600V 23A 75W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 75W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
封裝: SC-94
庫存9,000
600V
23A
92A
2.6V @ 15V, 12A
75W
115µJ (on), 135µJ (off)
Standard
49nC
17ns/60ns
300V, 12A, 23 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
STGP3NB60KD
STMicroelectronics

IGBT 600V 10A 50W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 50W
  • Switching Energy: 30µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 14ns/33ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,624
600V
10A
24A
2.8V @ 15V, 3A
50W
30µJ (on), 58µJ (off)
Standard
14nC
14ns/33ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot ISL9V5036S3S
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存36,168
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
AUIRGS4062D1TRL
Infineon Technologies

IGBT 600V 59A 246W D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 59A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 246W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,512
600V
59A
72A
1.77V @ 15V, 24A
246W
532µJ (on), 311µJ (off)
Standard
77nC
19ns/90ns
400V, 24A, 10 Ohm, 15V
102ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AUIRGB4062D1
Infineon Technologies

IGBT 600V 59A 246W TO-220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 59A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 246W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,352
600V
59A
72A
1.77V @ 15V, 24A
246W
532µJ (on), 311µJ (off)
Standard
77nC
19ns/90ns
400V, 24A, 10 Ohm, 15V
102ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGS4B60KD1PBF
Infineon Technologies

IGBT 600V 11A 63W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 93ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存24,816
600V
11A
22A
2.5V @ 15V, 4A
63W
73µJ (on), 47µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
93ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGA20N120B
IXYS

IGBT 1200V 40A 150W TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 6.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 28ns/400ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,344
1200V
40A
-
2.5V @ 15V, 20A
150W
6.5mJ (off)
Standard
63nC
28ns/400ns
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IXGT50N60C2
IXYS

IGBT 600V 75A 400W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 400W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 18ns/115ns
  • Test Condition: 480V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存4,512
600V
75A
300A
2.7V @ 15V, 40A
400W
380µJ (off)
Standard
138nC
18ns/115ns
480V, 40A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGQ28N120BD1
IXYS

IGBT 1200V 50A 250W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 28A
  • Power - Max: 250W
  • Switching Energy: 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 92nC
  • Td (on/off) @ 25°C: 30ns/180ns
  • Test Condition: 960V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存2,096
1200V
50A
150A
3.5V @ 15V, 28A
250W
2mJ (off)
Standard
92nC
30ns/180ns
960V, 28A, 5 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGA30N60C3D4
IXYS

IGBT 600V 60A 220W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,552
600V
60A
150A
3V @ 15V, 20A
220W
270µJ (on), 90µJ (off)
Standard
38nC
16ns/42ns
300V, 20A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
RJP6085DPN-00#T2
Renesas Electronics America

IGBT 600V 40A 178.5W TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
  • Power - Max: 178.5W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,752
600V
40A
-
3.5V @ 15V, 40A
178.5W
-
Standard
-
-
-
-
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKP08N65H5XKSA1
Infineon Technologies

IGBT 650V 18A 70W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 70W
  • Switching Energy: 70µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 11ns/115ns
  • Test Condition: 400V, 4A, 48 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: TO-220-3
庫存9,516
650V
18A
24A
2.1V @ 15V, 8A
70W
70µJ (on), 30µJ (off)
Standard
22nC
11ns/115ns
400V, 4A, 48 Ohm, 15V
40ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
STGWT40HP65FB
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: -/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存13,392
650V
80A
160A
2V @ 15V, 40A
283W
363µJ (off)
Standard
210nC
-/142ns
400V, 40A, 5 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGWA45HF60WDI
STMicroelectronics

IGBT 600V 80A 310W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 310W
  • Switching Energy: 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: -/145ns
  • Test Condition: 400V, 30A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存12,828
600V
80A
150A
2.5V @ 15V, 30A
310W
330µJ (off)
Standard
160nC
-/145ns
400V, 30A, 4.7 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGW30V60DF
STMicroelectronics

IGBT 600V 60A 258W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存6,168
600V
60A
120A
2.3V @ 15V, 30A
258W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
53ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
HGTG20N100D2
Harris Corporation

34A, 1200V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 4.1V @ 10V, 20A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 163 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
1000 V
34 A
100 A
4.1V @ 10V, 20A
150 W
-
Standard
163 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IHW20N140R5LXKSA1
Infineon Technologies

HOME APPLIANCES 14

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 211 W
  • Switching Energy: -, 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 125 nC
  • Td (on/off) @ 25°C: -/150ns
  • Test Condition: 25V, 20A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
封裝: -
Request a Quote
1400 V
40 A
60 A
1.9V @ 15V, 20A
211 W
-, 70µJ (off)
Standard
125 nC
-/150ns
25V, 20A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
HGTP12N6001
Harris Corporation

HGTP12N6001

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STGD4H60DF
STMicroelectronics

IGBT TRENCH FS 600V 8A DPAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 16 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 3A
  • Power - Max: 75 W
  • Switching Energy: 68µJ (on), 45µJ (off)
  • Input Type: Standard
  • Gate Charge: 35 nC
  • Td (on/off) @ 25°C: 35ns/121ns
  • Test Condition: 400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 73 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK (TO-252) type C2
封裝: -
庫存1,500
600 V
8 A
16 A
1.95V @ 15V, 3A
75 W
68µJ (on), 45µJ (off)
Standard
35 nC
35ns/121ns
400V, 3A, 47Ohm, 15V
73 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK (TO-252) type C2
IKW15N120BH6XKSA1
Infineon Technologies

IGBT 1200 V 15A TO247-3-46

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
  • Power - Max: 200 W
  • Switching Energy: 700µJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 18ns/240ns
  • Test Condition: 600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr): 340 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
封裝: -
Request a Quote
1200 V
30 A
60 A
2.3V @ 15V, 15A
200 W
700µJ (on), 550µJ (off)
Standard
92 nC
18ns/240ns
600V, 15A, 22Ohm, 15V
340 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-41
RGW80TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 214 W
  • Switching Energy: 760µJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 44ns/143ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存456
650 V
78 A
160 A
1.9V @ 15V, 40A
214 W
760µJ (on), 720µJ (off)
Standard
110 nC
44ns/143ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYH75N65C3D1
IXYS

IGBT PT 650V 175A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 175 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750 W
  • Switching Energy: 2mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 122 nC
  • Td (on/off) @ 25°C: 26ns/93ns
  • Test Condition: 400V, 60A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: -
Request a Quote
650 V
175 A
360 A
2.3V @ 15V, 60A
750 W
2mJ (on), 950µJ (off)
Standard
122 nC
26ns/93ns
400V, 60A, 3Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)