頁 24 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  24/158
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4RC20FTRLPBF
Infineon Technologies

IGBT 600V 22A 66W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 66W
  • Switching Energy: 190µJ (on), 920µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 26ns/194ns
  • Test Condition: 480V, 12A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,960
600V
22A
44A
2.1V @ 15V, 12A
66W
190µJ (on), 920µJ (off)
Standard
27nC
26ns/194ns
480V, 12A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4PC50SDPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
  • Power - Max: 200W
  • Switching Energy: 720µJ (on), 8.27mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 33ns/650ns
  • Test Condition: 480V, 41A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存5,456
600V
70A
140A
1.36V @ 15V, 41A
200W
720µJ (on), 8.27mJ (off)
Standard
180nC
33ns/650ns
480V, 41A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4IBC20FD
Infineon Technologies

IGBT 600V 14.3A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14.3A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 34W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封裝: TO-220-3 Full Pack
庫存5,424
600V
14.3A
64A
2V @ 15V, 9A
34W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
GN2470K4-G
Microchip Technology

IC IGBT 700V 3.5A 3DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 700V
  • Current - Collector (Ic) (Max): 1A
  • Current - Collector Pulsed (Icm): 3.5A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 13V, 3A
  • Power - Max: 2.5W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 8ns/20ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,200
700V
1A
3.5A
5V @ 13V, 3A
2.5W
-
Standard
-
8ns/20ns
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
TIG110BF
ON Semiconductor

IGBT 600V 27A 2W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 108A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 65ns/250ns
  • Test Condition: 300V, 15A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FI(LS)
封裝: TO-220-3 Full Pack
庫存4,608
600V
27A
108A
2V @ 15V, 15A
2W
-
Standard
95nC
65ns/250ns
300V, 15A, 30 Ohm, 15V
-
-
Through Hole
TO-220-3 Full Pack
TO-220FI(LS)
hot IXGH40N60B2D1
IXYS

IGBT 600V 75A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/130ns
  • Test Condition: 400V, 30A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存153,540
600V
75A
200A
1.7V @ 15V, 30A
300W
400µJ (off)
Standard
100nC
18ns/130ns
400V, 30A, 3.3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGPF7N60LSDTU
Fairchild/ON Semiconductor

IGBT 600V 14A 45W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 45W
  • Switching Energy: 270µJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 120ns/410ns
  • Test Condition: 300V, 7A, 470 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封裝: TO-220-3 Full Pack
庫存2,576
600V
14A
21A
2V @ 15V, 7A
45W
270µJ (on), 3.8mJ (off)
Standard
24nC
120ns/410ns
300V, 7A, 470 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot SGL60N90DG3TU
Fairchild/ON Semiconductor

IGBT 900V 60A 180W TO264

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存4,416
900V
60A
120A
2.7V @ 15V, 60A
180W
-
Standard
260nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IRGR4610DTRPBF
Infineon Technologies

IGBT 600V 16A 77W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 77W
  • Switching Energy: 56µJ (on), 122µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 27ns/75ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,536
600V
16A
18A
2V @ 15V, 6A
77W
56µJ (on), 122µJ (off)
Standard
13nC
27ns/75ns
400V, 6A, 47 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
IXXH75N60C3D1
IXYS

IGBT 600V 150A 750W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 750W
  • Switching Energy: 1.6mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 107nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存6,784
600V
150A
300A
2.3V @ 15V, 60A
750W
1.6mJ (on), 800µJ (off)
Standard
107nC
35ns/90ns
400V, 60A, 5 Ohm, 15V
25ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
GPA020A120MN-FD
Global Power Technologies Group

IGBT 1200V 40A 223W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 223W
  • Switching Energy: 2.8mJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 30ns/150ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 425ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3
  • Supplier Device Package: TO-3PN
封裝: TO-3
庫存4,352
1200V
40A
60A
2.5V @ 15V, 20A
223W
2.8mJ (on), 480µJ (off)
Standard
210nC
30ns/150ns
600V, 20A, 10 Ohm, 15V
425ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3
TO-3PN
IXYH25N250CHV
IXYS

IGBT 2500V 235A TO-247HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 235A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 937W
  • Switching Energy: 8.3mJ (on), 7.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147nC
  • Td (on/off) @ 25°C: 15ns/230ns
  • Test Condition: 1250V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247HV (IXYH)
封裝: TO-247-3
庫存5,840
2500V
95A
235A
4V @ 15V, 25A
937W
8.3mJ (on), 7.3mJ (off)
Standard
147nC
15ns/230ns
1250V, 25A, 5 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247HV (IXYH)
hot STGF19NC60HD
STMicroelectronics

IGBT 600V 16A 32W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 32W
  • Switching Energy: 85µJ (on), 189µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 25ns/97ns
  • Test Condition: 390V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封裝: TO-220-3 Full Pack
庫存91,404
600V
16A
60A
2.5V @ 15V, 12A
32W
85µJ (on), 189µJ (off)
Standard
53nC
25ns/97ns
390V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IKP15N65F5XKSA1
Infineon Technologies

IGBT 650V 30A 105W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105W
  • Switching Energy: 130µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 17ns/150ns
  • Test Condition: 400V, 7.5A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存9,792
650V
30A
45A
2.1V @ 15V, 15A
105W
130µJ (on), 40µJ (off)
Standard
38nC
17ns/150ns
400V, 7.5A, 39 Ohm, 15V
50ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRG4BH20K-LPBF
Infineon Technologies

IGBT 1200V 11A 60W TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 450µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 23ns/93ns
  • Test Condition: 960V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存6,912
1200V
11A
22A
4.3V @ 15V, 5A
60W
450µJ (on), 440µJ (off)
Standard
28nC
23ns/93ns
960V, 5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IKD10N60RATMA1
Infineon Technologies

IGBT 600V 20A 150W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 210µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,560
600V
20A
30A
2.1V @ 15V, 10A
150W
210µJ (on), 380µJ (off)
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
hot STGW40NC60W
STMicroelectronics

IGBT 600V 70A 250W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 302µJ (on), 349µJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 33ns/168ns
  • Test Condition: 390V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存390,000
600V
70A
230A
2.5V @ 15V, 30A
250W
302µJ (on), 349µJ (off)
Standard
126nC
33ns/168ns
390V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
STGWA75M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 468W
  • Switching Energy: 690µJ (on), 2.54mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 47ns/125ns
  • Test Condition: 400V, 75A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 165ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存16,800
650V
120A
225A
2.1V @ 15V, 75A
468W
690µJ (on), 2.54mJ (off)
Standard
225nC
47ns/125ns
400V, 75A, 3.3 Ohm, 15V
165ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
FGH40T65SPD_F155
Fairchild/ON Semiconductor

IGBT 650V 80A 267W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 1.16mJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 35nC
  • Td (on/off) @ 25°C: 16ns/37ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存82,056
650V
80A
120A
2.4V @ 15V, 40A
267W
1.16mJ (on), 280µJ (off)
Standard
35nC
16ns/37ns
400V, 40A, 6 Ohm, 15V
34ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGA20N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 40A 298W TO3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 298W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 137nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 447ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存26,808
1200V
40A
60A
2V @ 15V, 20A
298W
-
Standard
137nC
-
-
447ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot IRG4BC30FD-SPBF
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 124A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存18,468
600V
31A
124A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGS50TSX2GC11
Rohm Semiconductor

IGBT TRENCH FS 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存408
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
STGW75H65DFB2-4
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 7

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 115 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 357 W
  • Switching Energy: 992µJ (on), 766µJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 22ns/121ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4
封裝: -
庫存159
650 V
115 A
225 A
2V @ 15V, 75A
357 W
992µJ (on), 766µJ (off)
Standard
207 nC
22ns/121ns
400V, 75A, 10Ohm, 15V
88 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
SIGC07T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 6A, 54Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
6 A
18 A
2.5V @ 15V, 6A
-
-
Standard
-
21ns/110ns
300V, 6A, 54Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AFGHL40T120RH
onsemi

1200V/40A FSII IGBT (NO FRD) TO2

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250 V
  • Current - Collector (Ic) (Max): 48 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 400 W
  • Switching Energy: 3.7mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 277 nC
  • Td (on/off) @ 25°C: 37ns/150ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 195 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
Request a Quote
1250 V
48 A
160 A
2.4V @ 15V, 40A
400 W
3.7mJ (on), 1.2mJ (off)
Standard
277 nC
37ns/150ns
600V, 40A, 5Ohm, 15V
195 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
CY25CAJ-8F-T13-G11
Renesas Electronics Corporation

N-CHANNEL IGBT FOR STROBE FLASH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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SIGC61T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 300V, 75A, 3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
75 A
225 A
2.5V @ 15V, 75A
-
-
Standard
-
65ns/170ns
300V, 75A, 3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXYH20N120C4
IXYS

IGBT DISCRETE TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
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