頁 23 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  23/158
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4610DPBF
Infineon Technologies

IGBT 600V FULLPAK220 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: 122µJ (on), 56µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封裝: TO-220-3 Full Pack
庫存5,456
600V
10A
-
-
-
122µJ (on), 56µJ (off)
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220FP
IRG8P08N120KDPBF
Infineon Technologies

IGBT 1200V 15A 89W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 89W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 20ns/160ns
  • Test Condition: 600V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存5,808
1200V
15A
15A
2V @ 15V, 5A
89W
300µJ (on), 300µJ (off)
Standard
45nC
20ns/160ns
600V, 5A, 47 Ohm, 15V
50ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGP4062D-EPBF
Infineon Technologies

IGBT 600V 48A 250W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,320
600V
48A
72A
1.95V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXGP16N60B2D1
IXYS

IGBT 600V 40A 150W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 18ns/73ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存7,120
600V
40A
100A
1.95V @ 15V, 12A
150W
160µJ (on), 120µJ (off)
Standard
24nC
18ns/73ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH60N60B2
IXYS

IGBT 600V 75A 500W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
  • Power - Max: 500W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 28ns/160ns
  • Test Condition: 400V, 50A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存5,776
600V
75A
300A
1.8V @ 15V, 50A
500W
1mJ (off)
Standard
170nC
28ns/160ns
400V, 50A, 3.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT15GP60KG
Microsemi Corporation

IGBT 600V 56A 250W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 56A
  • Current - Collector Pulsed (Icm): 65A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 130µJ (on), 121µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 8ns/29ns
  • Test Condition: 400V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
封裝: TO-220-3
庫存2,592
600V
56A
65A
2.7V @ 15V, 15A
250W
130µJ (on), 121µJ (off)
Standard
55nC
8ns/29ns
400V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
hot STGB3NB60SDT4
STMicroelectronics

IGBT 600V 6A 70W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
  • Power - Max: 70W
  • Switching Energy: 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 125ns/3.4µs
  • Test Condition: 480V, 3A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存360,000
600V
6A
25A
1.5V @ 15V, 3A
70W
1.15mJ (off)
Standard
18nC
125ns/3.4µs
480V, 3A, 1 kOhm, 15V
1.7µs
175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IXYH30N450HV
IXYS

IGBT 4500V 30A TO-247HV

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 4500V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
  • Power - Max: 430W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247HV
封裝: TO-247-3 Variant
庫存5,360
4500V
60A
200A
3.9V @ 15V, 30A
430W
-
Standard
88nC
-
960V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247HV
IXGL200N60B3
IXYS

IGBT 600V 150A 400W ISOPLUS264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 400W
  • Switching Energy: 1.6mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 750nC
  • Td (on/off) @ 25°C: 44ns/310ns
  • Test Condition: 300V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS264?
  • Supplier Device Package: ISOPLUS264?
封裝: ISOPLUS264?
庫存7,360
600V
150A
600A
1.5V @ 15V, 100A
400W
1.6mJ (on), 2.9mJ (off)
Standard
750nC
44ns/310ns
300V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS264?
ISOPLUS264?
IXBF9N160G
IXYS

IGBT 1600V 7A 70W I4PAC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1600V
  • Current - Collector (Ic) (Max): 7A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
  • Power - Max: 70W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 960V, 5A, 27 Ohm, 10V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封裝: i4-Pac?-5 (3 leads)
庫存6,704
1600V
7A
-
7V @ 15V, 5A
70W
-
Standard
34nC
-
960V, 5A, 27 Ohm, 10V
-
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
STGWA40H60DLFB
STMicroelectronics

IGBT TRENCH 600V 40A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
  • Power - Max: 283W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
封裝: TO-247-3
庫存6,336
600V
40A
-
2V @ 7V, 40A
283W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot STGPL6NC60D
STMicroelectronics

IGBT 600V 14A 56W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 46.5µJ (on), 23.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 6.7ns/46ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存4,432
600V
14A
18A
2.9V @ 15V, 3A
56W
46.5µJ (on), 23.5µJ (off)
Standard
12nC
6.7ns/46ns
390V, 3A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXYX25N250CV1HV
IXYS

IGBT 2500V 235A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 95A
  • Current - Collector Pulsed (Icm): 235A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 937W
  • Switching Energy: 8.3mJ (on), 7.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147nC
  • Td (on/off) @ 25°C: 15ns/230ns
  • Test Condition: 1250V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 220ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存7,536
2500V
95A
235A
4V @ 15V, 25A
937W
8.3mJ (on), 7.3mJ (off)
Standard
147nC
15ns/230ns
1250V, 25A, 5 Ohm, 15V
220ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
RGTH80TS65DGC11
Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 234W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: TO-247-3
庫存9,132
650V
70A
160A
2.1V @ 15V, 40A
234W
-
Standard
79nC
34ns/120ns
400V, 40A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
APT15GT120BRDQ1G
Microsemi Corporation

IGBT 1200V 36A 250W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 585µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: 10ns/85ns
  • Test Condition: 800V, 15A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存7,224
1200V
36A
45A
3.6V @ 15V, 15A
250W
585µJ (on), 260µJ (off)
Standard
105nC
10ns/85ns
800V, 15A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
hot FGL60N100BNTD
Fairchild/ON Semiconductor

IGBT 1000V 60A 180W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 140ns/630ns
  • Test Condition: 600V, 60A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): 1.2µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存250,032
1000V
60A
120A
2.9V @ 15V, 60A
180W
-
Standard
275nC
140ns/630ns
600V, 60A, 51 Ohm, 15V
1.2µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXBX55N300
IXYS

IGBT 3000V 130A 625W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 130A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 55A
  • Power - Max: 625W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 335nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.9µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存6,160
3000V
130A
600A
3.2V @ 15V, 55A
625W
-
Standard
335nC
-
-
1.9µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IRG4BC30SPBF-INF
Infineon Technologies

IGBT 600V 34A TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100 W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: -
Request a Quote
600 V
34 A
-
1.6V @ 15V, 18A
100 W
260µJ (on), 3.45mJ (off)
Standard
-
22ns/540ns
480V, 18A, 23Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
HGTA32N60E2
Harris Corporation

32A, 600V N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
  • Power - Max: 208 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 265 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-218-5
  • Supplier Device Package: TO-218-5
封裝: -
Request a Quote
600 V
50 A
200 A
2.9V @ 15V, 32A
208 W
-
Standard
265 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-218-5
TO-218-5
FGY140T120SWD
onsemi

IGBT FIELD STOP 1200V 280A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 560 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 140A
  • Power - Max: 1150 W
  • Switching Energy: 4.7mJ (on), 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 415.4 nC
  • Td (on/off) @ 25°C: 59.2ns/249.6ns
  • Test Condition: 600V, 140A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 307.3 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
封裝: -
Request a Quote
1200 V
280 A
560 A
2V @ 15V, 140A
1150 W
4.7mJ (on), 2.3mJ (off)
Standard
415.4 nC
59.2ns/249.6ns
600V, 140A, 4.7Ohm, 15V
307.3 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
IKY50N120CH7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 75A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Power - Max: 398 W
  • Switching Energy: 1.09mJ (on), 1.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 372 nC
  • Td (on/off) @ 25°C: 35ns/331ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 86 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-U10
封裝: -
庫存609
1200 V
75 A
200 A
2.15V @ 15V, 50A
398 W
1.09mJ (on), 1.33mJ (off)
Standard
372 nC
35ns/331ns
-
86 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-U10
IXYP10N65B3D1
IXYS

IGBT PT 650V 32A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
  • Power - Max: 160 W
  • Switching Energy: 300µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 20 nC
  • Td (on/off) @ 25°C: 17ns/125ns
  • Test Condition: 400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: -
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650 V
32 A
62 A
1.95V @ 15V, 10A
160 W
300µJ (on), 200µJ (off)
Standard
20 nC
17ns/125ns
400V, 10A, 50Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RGS30TSX2GC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存1,350
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYK30N170CV1
IXYS

DISC IGBT XPT-HI VOLTAGE TO-264(

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
  • Power - Max: 937 W
  • Switching Energy: 3.6mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 16ns/143ns
  • Test Condition: 850V, 30A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXYK)
封裝: -
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1700 V
100 A
250 A
4V @ 15V, 30A
937 W
3.6mJ (on), 1.8mJ (off)
Standard
150 nC
16ns/143ns
850V, 30A, 2.7Ohm, 15V
33 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
FGH60N60SFDTU-F085
onsemi

IGBT FIELD STOP 600V 120A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 378 W
  • Switching Energy: 1.97mJ (on), 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 26ns/134ns
  • Test Condition: 400V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 55 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
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600 V
120 A
180 A
2.9V @ 15V, 60A
378 W
1.97mJ (on), 570µJ (off)
Standard
188 nC
26ns/134ns
400V, 60A, 5Ohm, 15V
55 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGP3040G2-F085
onsemi

IGBT 400V 41A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: -
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400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
IGC39T65QEX1SA1
Infineon Technologies

IGBT TRENCH FS 650V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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650 V
75 A
225 A
2.22V @ 15V, 75A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC25B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
1200 V
25 A
-
2.7V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die