頁 17 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  17/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4640DTRRPBF
Infineon Technologies

DIODE 600V 24A D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,208
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGP90N33TCM-A
IXYS

IGBT 330V 40A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存5,408
330V
40A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-220-3
TO-220AB
FGPF70N30TTU
Fairchild/ON Semiconductor

IGBT 300V 49.2W TO220F

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
  • Power - Max: 49.2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封裝: TO-220-3 Full Pack
庫存6,688
300V
-
160A
1.5V @ 15V, 20A
49.2W
-
Standard
125nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
IXSH45N120
IXYS

IGBT 1200V 75A 300W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 21mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 80ns/400ns
  • Test Condition: 960V, 45A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封裝: TO-247-3
庫存4,528
1200V
75A
180A
3V @ 15V, 45A
300W
21mJ (off)
Standard
150nC
80ns/400ns
960V, 45A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
hot IXGH24N60C
IXYS

IGBT 600V 48A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存103,464
600V
48A
96A
2.5V @ 15V, 24A
150W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IRG4PH40KPBF
Infineon Technologies

IGBT 1200V 30A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
  • Power - Max: 160W
  • Switching Energy: 730µJ (on), 1.66mJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 30ns/200ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存5,664
1200V
30A
60A
3.4V @ 15V, 15A
160W
730µJ (on), 1.66mJ (off)
Standard
94nC
30ns/200ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT64GA90LD30
Microsemi Corporation

IGBT 900V 117A 500W TO-264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1192µJ (on), 1088µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
封裝: TO-264-3, TO-264AA
庫存6,352
900V
117A
193A
3.1V @ 15V, 38A
500W
1192µJ (on), 1088µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
hot APT30GP60BG
Microsemi Corporation

IGBT 600V 100A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存8,664
600V
100A
100A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXYH20N120C3
IXYS

IGBT 1200V 40A 278W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 278W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封裝: TO-247-3
庫存3,216
1200V
40A
96A
3.4V @ 15V, 20A
278W
1.3mJ (on), 500µJ (off)
Standard
53nC
20ns/90ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
hot HGT1S20N60C3S9A
Fairchild/ON Semiconductor

IGBT 600V 45A 164W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 164W
  • Switching Energy: 295µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 91nC
  • Td (on/off) @ 25°C: 28ns/151ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存69,000
600V
45A
300A
1.8V @ 15V, 20A
164W
295µJ (on), 500µJ (off)
Standard
91nC
28ns/151ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
NGTD14T65F2SWK
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存7,216
650V
-
120A
2V @ 15V, 35A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot APT64GA90B
Microsemi Corporation

IGBT 900V 117A 500W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1857µJ (on), 2311µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存5,248
900V
117A
193A
3.1V @ 15V, 38A
500W
1857µJ (on), 2311µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
APT27GA90BD15
Microsemi Corporation

IGBT 900V 48A 223W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 79A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A
  • Power - Max: 223W
  • Switching Energy: 413µJ (on), 287µJ (off)
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 9ns/98ns
  • Test Condition: 600V, 14A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存7,824
900V
48A
79A
3.1V @ 15V, 14A
223W
413µJ (on), 287µJ (off)
Standard
62nC
9ns/98ns
600V, 14A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXYP10N65C3D1
IXYS

IGBT 650V 30A 160W TO-220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 54A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 160W
  • Switching Energy: 240µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 20ns/77ns
  • Test Condition: 400V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存7,600
650V
30A
54A
2.5V @ 15V, 10A
160W
240µJ (on), 110µJ (off)
Standard
18nC
20ns/77ns
400V, 10A, 50 Ohm, 15V
170ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RGT60TS65DGC11
Rohm Semiconductor

IGBT 650V 55A 194W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 194W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58nC
  • Td (on/off) @ 25°C: 29ns/100ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: TO-247-3
庫存6,936
650V
55A
90A
2.1V @ 15V, 30A
194W
-
Standard
58nC
29ns/100ns
400V, 30A, 10 Ohm, 15V
58ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXBA14N300HV
IXYS

REVERSE CONDUCTING IGBT

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 40ns/166ns
  • Test Condition: 960V, 14A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 1.4µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存12,480
3000V
38A
120A
2.7V @ 15V, 14A
200W
-
Standard
62nC
40ns/166ns
960V, 14A, 20 Ohm, 15V
1.4µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263
STGW60H65FB
STMicroelectronics

IGBT 650V 80A 375W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 1.09mJ (on), 626µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: 51ns/160ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存7,760
650V
80A
240A
2.3V @ 15V, 60A
375W
1.09mJ (on), 626µJ (off)
Standard
306nC
51ns/160ns
400V, 60A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot NGD8205ANT4G
Littelfuse Inc.

IGBT 390V 20A 125W DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存593,088
390V
20A
50A
1.9V @ 4.5V, 20A
125W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
IXYQ40N65C3D1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
  • Power - Max: 300 W
  • Switching Energy: 830µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 66 nC
  • Td (on/off) @ 25°C: 23ns/110ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: -
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650 V
80 A
180 A
2.35V @ 15V, 40A
300 W
830µJ (on), 650µJ (off)
Standard
66 nC
23ns/110ns
400V, 30A, 10Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
AUIRGP4066D1-IR
International Rectifier

IGBT, 60A I(C), 600V V(BR)CES, N

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454 W
  • Switching Energy: 4.24mJ (on), 2.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 225 nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 240 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: -
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600 V
140 A
225 A
2.1V @ 15V, 75A
454 W
4.24mJ (on), 2.17mJ (off)
Standard
225 nC
50ns/200ns
400V, 75A, 10Ohm, 15V
240 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
RGTH80TK65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 31A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 66 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 34ns/120ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封裝: -
庫存1,350
650 V
31 A
160 A
2.1V @ 15V, 40A
66 W
-
Standard
79 nC
34ns/120ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXYH40N65B3D1
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 195 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 300 W
  • Switching Energy: 800µJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 68 nC
  • Td (on/off) @ 25°C: 20ns/140ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 37 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封裝: -
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650 V
86 A
195 A
2V @ 15V, 40A
300 W
800µJ (on), 1.25mJ (off)
Standard
68 nC
20ns/140ns
400V, 30A, 10Ohm, 15V
37 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
SGW25N120FKSA1
Infineon Technologies

IGBT 1200V 46A 313W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): 84 A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
  • Power - Max: 313 W
  • Switching Energy: 3.7mJ
  • Input Type: Standard
  • Gate Charge: 225 nC
  • Td (on/off) @ 25°C: 45ns/730ns
  • Test Condition: 800V, 25A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封裝: -
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1200 V
46 A
84 A
3.6V @ 15V, 25A
313 W
3.7mJ
Standard
225 nC
45ns/730ns
800V, 25A, 22Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
PCISL9R860W
onsemi

IGBT PCISL9R860W

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYT85N120A4HV
IXYS

IGBT PT 1200V 300A TO268HV

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Current - Collector Pulsed (Icm): 520 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
  • Power - Max: 1150 W
  • Switching Energy: 4.9mJ (on), 8.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 40ns/400ns
  • Test Condition: 600V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXYT)
封裝: -
庫存870
1200 V
300 A
520 A
1.8V @ 15V, 85A
1150 W
4.9mJ (on), 8.3mJ (off)
Standard
200 nC
40ns/400ns
600V, 60A, 5Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXYT)
IKU15N60R
Infineon Technologies

IGBT TRENCH 600V 30A TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 900µJ
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 110 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: PG-TO251-3
封裝: -
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600 V
30 A
45 A
2.1V @ 15V, 15A
250 W
900µJ
Standard
90 nC
16ns/183ns
400V, 15A, 15Ohm, 15V
110 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
SIGC18T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC109T120R3
Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
1200 V
-
300 A
2.1V @ 15V, 100A
-
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die