頁 16 - 電晶體 - IGBT - 單 | 離散半導體產品

IHY15N120R3XKSA1

Infineon Technologies

IGBT 1200V 30A 254W TO247HC-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Power - Max: 254W
Switching Energy: 700µJ (off)
Input Type: Standard
Gate Charge: 165nC
Td (on/off) @ 25°C: -/300ns
Test Condition: 600V, 15A, 14.6 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PG-TO247HC-3

封裝: TO-247-3 Variant

庫存7,440

1200V

30A

45A

1.7V @ 15V, 15A

254W

700µJ (off)

Standard

165nC

-/300ns

600V, 15A, 14.6 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3 Variant

PG-TO247HC-3

IRG4BH20K-S

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,552

1200V

11A

22A

4.3V @ 15V, 5A

60W

450µJ (on), 440µJ (off)

Standard

28nC

23ns/93ns

960V, 5A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

NGTB30N60FLWG

ON Semiconductor

IGBT 600V 60A 250W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: 250W
Switching Energy: 700µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 83ns/170ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存6,368

600V

60A

120A

1.9V @ 15V, 30A

250W

700µJ (on), 280µJ (off)

Standard

170nC

83ns/170ns

400V, 30A, 10 Ohm, 15V

72ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

STGB7NC60HT4

STMicroelectronics

IGBT 600V 25A 80W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): 50A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
Power - Max: 80W
Switching Energy: -
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 18.5ns/72ns
Test Condition: 390V, 7A, 10 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存6,864

600V

25A

50A

2.5V @ 15V, 7A

80W

-

Standard

35nC

18.5ns/72ns

390V, 7A, 10 Ohm, 15V

37ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

HGT1S7N60C3DS

Fairchild/ON Semiconductor

IGBT 600V 14A 60W TO263AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Power - Max: 60W
Switching Energy: 165µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 23nC
Td (on/off) @ 25°C: -
Test Condition: 480V, 7A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存3,984

600V

14A

56A

2V @ 15V, 7A

60W

165µJ (on), 600µJ (off)

Standard

23nC

-

480V, 7A, 50 Ohm, 15V

37ns

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

HGTG7N60A4

Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 34A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Power - Max: 125W
Switching Energy: 55µJ (on), 60µJ (off)
Input Type: Standard
Gate Charge: 37nC
Td (on/off) @ 25°C: 11ns/100ns
Test Condition: 390V, 7A, 25 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存131,784

600V

34A

56A

2.7V @ 15V, 7A

125W

55µJ (on), 60µJ (off)

Standard

37nC

11ns/100ns

390V, 7A, 25 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

STGB12NB60KDT4

STMicroelectronics

IGBT 600V 30A 125W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
Power - Max: 125W
Switching Energy: 258µJ (off)
Input Type: Standard
Gate Charge: 54nC
Td (on/off) @ 25°C: 25ns/96ns
Test Condition: 480V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr): 80ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存36,000

600V

30A

60A

2.8V @ 15V, 12A

125W

258µJ (off)

Standard

54nC

25ns/96ns

480V, 12A, 10 Ohm, 15V

80ns

150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IRG4PC50KPBF

Infineon Technologies

IGBT 600V 52A 200W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 104A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 200W
Switching Energy: 490µJ (on), 680µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 38ns/160ns
Test Condition: 480V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封裝: TO-247-3

庫存6,704

600V

52A

104A

2.2V @ 15V, 30A

200W

490µJ (on), 680µJ (off)

Standard

200nC

38ns/160ns

480V, 30A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRG4BC30W-STRRP

Infineon Technologies

IGBT 600V 23A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23A
Current - Collector Pulsed (Icm): 92A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Power - Max: 100W
Switching Energy: 130µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 25ns/99ns
Test Condition: 480V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存2,592

600V

23A

92A

2.7V @ 15V, 12A

100W

130µJ (on), 130µJ (off)

Standard

51nC

25ns/99ns

480V, 12A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

NGTB50N60FL2WG

ON Semiconductor

IGBT 600V 50A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 417W
Switching Energy: 1.5mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 220nC
Td (on/off) @ 25°C: 100ns/237ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr): 94ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: TO-247-3

庫存4,784

600V

100A

200A

2V @ 15V, 50A

417W

1.5mJ (on), 460µJ (off)

Standard

220nC

100ns/237ns

400V, 50A, 10 Ohm, 15V

94ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

IXGA12N120A2

IXYS

IGBT 1200V 24A 75W TO263

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 24A
Current - Collector Pulsed (Icm): 48A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Power - Max: 75W
Switching Energy: 5.4mJ (off)
Input Type: Standard
Gate Charge: 24nC
Td (on/off) @ 25°C: 15ns/680ns
Test Condition: 960V, 12A, 100 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存7,360

1200V

24A

48A

3V @ 15V, 12A

75W

5.4mJ (off)

Standard

24nC

15ns/680ns

960V, 12A, 100 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (IXGA)

TIG056BF-1E

ON Semiconductor

IGBT 430V 240A 30W TO-220F-3FS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A
Power - Max: 30W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 46ns/140ns
Test Condition: 320V, 240A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3FS

封裝: TO-220-3 Full Pack

庫存156,000

430V

-

240A

5V @ 15V, 240A

30W

-

Standard

-

46ns/140ns

320V, 240A, 10 Ohm, 15V

-

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220F-3FS

FGA50N100BNTD2

Fairchild/ON Semiconductor

IGBT 1000V 50A 156W TO3P

IGBT Type: NPT and Trench
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Power - Max: 156W
Switching Energy: -
Input Type: Standard
Gate Charge: 257nC
Td (on/off) @ 25°C: 34ns/243ns
Test Condition: 600V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr): 75ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

庫存34,800

1000V

50A

200A

2.9V @ 15V, 60A

156W

-

Standard

257nC

34ns/243ns

600V, 60A, 10 Ohm, 15V

75ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

APT25GR120B

Microsemi Corporation

IGBT 1200V 75A 521W TO247

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 742µJ (on), 427µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封裝: TO-247-3

庫存7,608

1200V

75A

100A

3.2V @ 15V, 25A

521W

742µJ (on), 427µJ (off)

Standard

203nC

16ns/122ns

600V, 25A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IGW75N65H5XKSA1

Infineon Technologies

IGBT 650V TO247-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 395W
Switching Energy: 2.25mJ (on), 950µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 28ns/174ns
Test Condition: 400V, 75A, 8 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存7,328

650V

120A

300A

2.1V @ 15V, 75A

395W

2.25mJ (on), 950µJ (off)

Standard

160nC

28ns/174ns

400V, 75A, 8 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRG4PC60FPBF

Infineon Technologies

IGBT 600V 90A 520W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 360A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Power - Max: 520W
Switching Energy: 300µJ (on), 4.6mJ (off)
Input Type: Standard
Gate Charge: 290nC
Td (on/off) @ 25°C: 42ns/310ns
Test Condition: 480V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封裝: TO-247-3

庫存29,340

600V

90A

360A

1.8V @ 15V, 60A

520W

300µJ (on), 4.6mJ (off)

Standard

290nC

42ns/310ns

480V, 60A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IKW50N60T

Infineon Technologies

IGBT 600V 80A 333W TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7 Ohm, 15V
Reverse Recovery Time (trr): 143ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存167,304

600V

80A

150A

2V @ 15V, 50A

333W

2.6mJ

Standard

310nC

26ns/299ns

400V, 50A, 7 Ohm, 15V

143ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

AFGHL40T65SQ

onsemi

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 239 W
Switching Energy: 250µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 15ns/70ns
Test Condition: 400V, 20A, 6Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: -

庫存1,026

650 V

80 A

160 A

2.1V @ 15V, 40A

239 W

250µJ (on), 90µJ (off)

Standard

68 nC

15ns/70ns

400V, 20A, 6Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

RJP3082DPP-00-T2

Renesas Electronics Corporation

HIGH SPEED IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

FGPF50N33BTTU

Fairchild Semiconductor

IGBT, 50A, 330V, N-CHANNEL, TO-2

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A
Power - Max: 43 W
Switching Energy: -
Input Type: Standard
Gate Charge: 35 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F

封裝: -

Request a Quote

330 V

50 A

160 A

1.5V @ 15V, 20A

43 W

-

Standard

35 nC

-

Through Hole

TO-220-3 Full Pack

TO-220F

AFGHL40T120RL

onsemi

1200V/40A FSII IGBT LOW VCESAT (

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 48 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Power - Max: 529 W
Switching Energy: 3.4mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 395 nC
Td (on/off) @ 25°C: 48ns/208ns
Test Condition: 600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 195 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: -

Request a Quote

1250 V

48 A

160 A

2.1V @ 15V, 40A

529 W

3.4mJ (on), 1.2mJ (off)

Standard

395 nC

48ns/208ns

600V, 40A, 5Ohm, 15V

195 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

MGW14N60ED

onsemi

IGBT, 18A, 600V, N-CHANNEL

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SIGC42T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

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600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

63-8028

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

APT11GP60BDQBG

Microsemi Corporation

IGBT 600V 41A 187W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 41 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A
Power - Max: 187 W
Switching Energy: 46µJ (on), 90µJ (off)
Input Type: Standard
Gate Charge: 40 nC
Td (on/off) @ 25°C: 7ns/29ns
Test Condition: 400V, 11A, 5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

封裝: -

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600 V

41 A

45 A

2.7V @ 15V, 11A

187 W

46µJ (on), 90µJ (off)

Standard

40 nC

7ns/29ns

400V, 11A, 5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

IKW08N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 21A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Power - Max: 106 W
Switching Energy: 370µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 52 nC
Td (on/off) @ 25°C: 17ns/160ns
Test Condition: 600V, 8A, 20Ohm, 15V
Reverse Recovery Time (trr): 130 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: -

庫存12

1200 V

21 A

24 A

2V @ 15V, 8A

106 W

370µJ (on), 400µJ (off)

Standard

52 nC

17ns/160ns

600V, 8A, 20Ohm, 15V

130 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

PCG20N60A4W

onsemi

IGBT PCG20N60A4W

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

IQFH99N06NM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IHY15N120R3XKSA1	Infineon Technologies	IGBT 1200V 30A 254W TO247HC-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A Power - Max: 254W Switching Energy: 700µJ (off) Input Type: Standard Gate Charge: 165nC Td (on/off) @ 25°C: -/300ns Test Condition: 600V, 15A, 14.6 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PG-TO247HC-3	封裝: TO-247-3 Variant	庫存7,440	1200V	30A	45A	1.7V @ 15V, 15A	254W	700µJ (off)	Standard	165nC	-/300ns	600V, 15A, 14.6 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PG-TO247HC-3
IRG4BH20K-S	Infineon Technologies	IGBT 1200V 11A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,552	1200V	11A	22A	4.3V @ 15V, 5A	60W	450µJ (on), 440µJ (off)	Standard	28nC	23ns/93ns	960V, 5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
NGTB30N60FLWG	ON Semiconductor	IGBT 600V 60A 250W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 250W Switching Energy: 700µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 83ns/170ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 72ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存6,368	600V	60A	120A	1.9V @ 15V, 30A	250W	700µJ (on), 280µJ (off)	Standard	170nC	83ns/170ns	400V, 30A, 10 Ohm, 15V	72ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
STGB7NC60HT4	STMicroelectronics	IGBT 600V 25A 80W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): 50A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A Power - Max: 80W Switching Energy: - Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 18.5ns/72ns Test Condition: 390V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存6,864	600V	25A	50A	2.5V @ 15V, 7A	80W	-	Standard	35nC	18.5ns/72ns	390V, 7A, 10 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
HGT1S7N60C3DS	Fairchild/ON Semiconductor	IGBT 600V 14A 60W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A Power - Max: 60W Switching Energy: 165µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: - Test Condition: 480V, 7A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存3,984	600V	14A	56A	2V @ 15V, 7A	60W	165µJ (on), 600µJ (off)	Standard	23nC	-	480V, 7A, 50 Ohm, 15V	37ns	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
HGTG7N60A4	Fairchild/ON Semiconductor	IGBT 600V 34A 125W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 34A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Power - Max: 125W Switching Energy: 55µJ (on), 60µJ (off) Input Type: Standard Gate Charge: 37nC Td (on/off) @ 25°C: 11ns/100ns Test Condition: 390V, 7A, 25 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存131,784	600V	34A	56A	2.7V @ 15V, 7A	125W	55µJ (on), 60µJ (off)	Standard	37nC	11ns/100ns	390V, 7A, 25 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STGB12NB60KDT4	STMicroelectronics	IGBT 600V 30A 125W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A Power - Max: 125W Switching Energy: 258µJ (off) Input Type: Standard Gate Charge: 54nC Td (on/off) @ 25°C: 25ns/96ns Test Condition: 480V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存36,000	600V	30A	60A	2.8V @ 15V, 12A	125W	258µJ (off)	Standard	54nC	25ns/96ns	480V, 12A, 10 Ohm, 15V	80ns	150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4PC50KPBF	Infineon Technologies	IGBT 600V 52A 200W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 52A Current - Collector Pulsed (Icm): 104A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 200W Switching Energy: 490µJ (on), 680µJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 38ns/160ns Test Condition: 480V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封裝: TO-247-3	庫存6,704	600V	52A	104A	2.2V @ 15V, 30A	200W	490µJ (on), 680µJ (off)	Standard	200nC	38ns/160ns	480V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRG4BC30W-STRRP	Infineon Technologies	IGBT 600V 23A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 92A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Power - Max: 100W Switching Energy: 130µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 25ns/99ns Test Condition: 480V, 12A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存2,592	600V	23A	92A	2.7V @ 15V, 12A	100W	130µJ (on), 130µJ (off)	Standard	51nC	25ns/99ns	480V, 12A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
NGTB50N60FL2WG	ON Semiconductor	IGBT 600V 50A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 417W Switching Energy: 1.5mJ (on), 460µJ (off) Input Type: Standard Gate Charge: 220nC Td (on/off) @ 25°C: 100ns/237ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 94ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: TO-247-3	庫存4,784	600V	100A	200A	2V @ 15V, 50A	417W	1.5mJ (on), 460µJ (off)	Standard	220nC	100ns/237ns	400V, 50A, 10 Ohm, 15V	94ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXGA12N120A2	IXYS	IGBT 1200V 24A 75W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Power - Max: 75W Switching Energy: 5.4mJ (off) Input Type: Standard Gate Charge: 24nC Td (on/off) @ 25°C: 15ns/680ns Test Condition: 960V, 12A, 100 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存7,360	1200V	24A	48A	3V @ 15V, 12A	75W	5.4mJ (off)	Standard	24nC	15ns/680ns	960V, 12A, 100 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
TIG056BF-1E	ON Semiconductor	IGBT 430V 240A 30W TO-220F-3FS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A Power - Max: 30W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 46ns/140ns Test Condition: 320V, 240A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3FS	封裝: TO-220-3 Full Pack	庫存156,000	430V	-	240A	5V @ 15V, 240A	30W	-	Standard	-	46ns/140ns	320V, 240A, 10 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3FS
FGA50N100BNTD2	Fairchild/ON Semiconductor	IGBT 1000V 50A 156W TO3P IGBT Type: NPT and Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Power - Max: 156W Switching Energy: - Input Type: Standard Gate Charge: 257nC Td (on/off) @ 25°C: 34ns/243ns Test Condition: 600V, 60A, 10 Ohm, 15V Reverse Recovery Time (trr): 75ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	封裝: TO-3P-3, SC-65-3	庫存34,800	1000V	50A	200A	2.9V @ 15V, 60A	156W	-	Standard	257nC	34ns/243ns	600V, 60A, 10 Ohm, 15V	75ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
APT25GR120B	Microsemi Corporation	IGBT 1200V 75A 521W TO247 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Power - Max: 521W Switching Energy: 742µJ (on), 427µJ (off) Input Type: Standard Gate Charge: 203nC Td (on/off) @ 25°C: 16ns/122ns Test Condition: 600V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存7,608	1200V	75A	100A	3.2V @ 15V, 25A	521W	742µJ (on), 427µJ (off)	Standard	203nC	16ns/122ns	600V, 25A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IGW75N65H5XKSA1	Infineon Technologies	IGBT 650V TO247-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 395W Switching Energy: 2.25mJ (on), 950µJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 28ns/174ns Test Condition: 400V, 75A, 8 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存7,328	650V	120A	300A	2.1V @ 15V, 75A	395W	2.25mJ (on), 950µJ (off)	Standard	160nC	28ns/174ns	400V, 75A, 8 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRG4PC60FPBF	Infineon Technologies	IGBT 600V 90A 520W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 90A Current - Collector Pulsed (Icm): 360A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A Power - Max: 520W Switching Energy: 300µJ (on), 4.6mJ (off) Input Type: Standard Gate Charge: 290nC Td (on/off) @ 25°C: 42ns/310ns Test Condition: 480V, 60A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封裝: TO-247-3	庫存29,340	600V	90A	360A	1.8V @ 15V, 60A	520W	300µJ (on), 4.6mJ (off)	Standard	290nC	42ns/310ns	480V, 60A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IKW50N60T	Infineon Technologies	IGBT 600V 80A 333W TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7 Ohm, 15V Reverse Recovery Time (trr): 143ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存167,304	600V	80A	150A	2V @ 15V, 50A	333W	2.6mJ	Standard	310nC	26ns/299ns	400V, 50A, 7 Ohm, 15V	143ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
AFGHL40T65SQ	onsemi	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 239 W Switching Energy: 250µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 15ns/70ns Test Condition: 400V, 20A, 6Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: -	庫存1,026	650 V	80 A	160 A	2.1V @ 15V, 40A	239 W	250µJ (on), 90µJ (off)	Standard	68 nC	15ns/70ns	400V, 20A, 6Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
RJP3082DPP-00-T2	Renesas Electronics Corporation	HIGH SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGPF50N33BTTU	Fairchild Semiconductor	IGBT, 50A, 330V, N-CHANNEL, TO-2 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 20A Power - Max: 43 W Switching Energy: - Input Type: Standard Gate Charge: 35 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	封裝: -	Request a Quote	330 V	50 A	160 A	1.5V @ 15V, 20A	43 W	-	Standard	35 nC	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220F
AFGHL40T120RL	onsemi	1200V/40A FSII IGBT LOW VCESAT ( IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 48 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Power - Max: 529 W Switching Energy: 3.4mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 395 nC Td (on/off) @ 25°C: 48ns/208ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 195 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: -	Request a Quote	1250 V	48 A	160 A	2.1V @ 15V, 40A	529 W	3.4mJ (on), 1.2mJ (off)	Standard	395 nC	48ns/208ns	600V, 40A, 5Ohm, 15V	195 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MGW14N60ED	onsemi	IGBT, 18A, 600V, N-CHANNEL IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC42T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
63-8028	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT11GP60BDQBG	Microsemi Corporation	IGBT 600V 41A 187W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 11A Power - Max: 187 W Switching Energy: 46µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 40 nC Td (on/off) @ 25°C: 7ns/29ns Test Condition: 400V, 11A, 5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	封裝: -	Request a Quote	600 V	41 A	45 A	2.7V @ 15V, 11A	187 W	46µJ (on), 90µJ (off)	Standard	40 nC	7ns/29ns	400V, 11A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IKW08N120CS7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 21A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 21 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Power - Max: 106 W Switching Energy: 370µJ (on), 400µJ (off) Input Type: Standard Gate Charge: 52 nC Td (on/off) @ 25°C: 17ns/160ns Test Condition: 600V, 8A, 20Ohm, 15V Reverse Recovery Time (trr): 130 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: -	庫存12	1200 V	21 A	24 A	2V @ 15V, 8A	106 W	370µJ (on), 400µJ (off)	Standard	52 nC	17ns/160ns	600V, 8A, 20Ohm, 15V	130 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
PCG20N60A4W	onsemi	IGBT PCG20N60A4W IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQFH99N06NM5ATMA1	Infineon Technologies	TRENCH 40<-<100V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-