頁 149 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  149/158
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製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8CH20K10D
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,896
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGR4607DTRRPBF
Infineon Technologies

IGBT 600V 11A 58W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,144
600V
11A
12A
2.05V @ 15V, 4A
58W
140µJ (on), 62µJ (off)
Standard
9nC
27ns/120ns
400V, 4A, 100 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG7PH44K10DPBF
Infineon Technologies

IGBT 1200V 70A 320W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 320W
  • Switching Energy: 2.1mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 75ns/315ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存3,536
1200V
70A
100A
2.4V @ 15V, 25A
320W
2.1mJ (on), 1.3mJ (off)
Standard
200nC
75ns/315ns
600V, 25A, 10 Ohm, 15V
130ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC15UD
Infineon Technologies

IGBT 600V 14A 49W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 42A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Power - Max: 49W
  • Switching Energy: 240µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 480V, 7.8A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存2,288
600V
14A
42A
2.4V @ 15V, 7.8A
49W
240µJ (on), 260µJ (off)
Standard
23nC
17ns/160ns
480V, 7.8A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRG4PC40K
Infineon Technologies

IGBT 600V 42A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 160W
  • Switching Energy: 620µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 30ns/140ns
  • Test Condition: 480V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存6,320
600V
42A
84A
2.6V @ 15V, 25A
160W
620µJ (on), 330µJ (off)
Standard
120nC
30ns/140ns
480V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGBC30FD2
Infineon Technologies

IGBT W/DIODE 600V 31A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存3,456
600V
31A
-
2.1V @ 15V, 17A
100W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
APT11GF120BRDQ1G
Microsemi Corporation

IGBT 1200V 25A 156W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
  • Power - Max: 156W
  • Switching Energy: 300µJ (on), 285µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 7ns/100ns
  • Test Condition: 800V, 8A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
封裝: TO-247-3
庫存7,328
1200V
25A
24A
3V @ 15V, 8A
156W
300µJ (on), 285µJ (off)
Standard
65nC
7ns/100ns
800V, 8A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXSH40N60B2D1
IXYS

IGBT 600V 48A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
封裝: TO-247-3
庫存2,100
600V
48A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXSH)
IRG7PSH54K10DPBF
Infineon Technologies

IGBT 1200V 120A 520W TO274AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 520W
  • Switching Energy: 4.8mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 435nC
  • Td (on/off) @ 25°C: 110ns/490ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-247-3
庫存7,088
1200V
120A
200A
2.4V @ 15V, 50A
520W
4.8mJ (on), 2.8mJ (off)
Standard
435nC
110ns/490ns
600V, 50A, 5 Ohm, 15V
170ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
IXXK200N60B3
IXYS

IGBT 600V 380A 1630W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 380A
  • Current - Collector Pulsed (Icm): 900A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
  • Power - Max: 1630W
  • Switching Energy: 2.85mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 48ns/160ns
  • Test Condition: 360V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
封裝: TO-264-3, TO-264AA
庫存3,504
600V
380A
900A
1.7V @ 15V, 100A
1630W
2.85mJ (on), 2.9mJ (off)
Standard
315nC
48ns/160ns
360V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
IXGH40N120B2D1
IXYS

IGBT 1200V 75A 380W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 4.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 21ns/290ns
  • Test Condition: 960V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存3,472
1200V
75A
200A
3.5V @ 15V, 40A
380W
4.5mJ (on), 3mJ (off)
Standard
138nC
21ns/290ns
960V, 40A, 2 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGR35N120BD1
IXYS

IGBT 1200V 54A 250W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 54A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 35A
  • Power - Max: 250W
  • Switching Energy: 900µJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 960V, 35A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封裝: ISOPLUS247?
庫存6,368
1200V
54A
200A
3.5V @ 15V, 35A
250W
900µJ (on), 3.8mJ (off)
Standard
140nC
40ns/270ns
960V, 35A, 3 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot IRGPS40B120UDP
Infineon Technologies

IGBT 1200V 80A 595W SUPER247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 595W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 40A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 180ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-274AA
庫存5,712
1200V
80A
160A
3.7V @ 15V, 50A
595W
1.4mJ (on), 1.65mJ (off)
Standard
340nC
-
600V, 40A, 4.7 Ohm, 15V
180ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
IHW40N65R5XKSA1
Infineon Technologies

IGBT 650V 80A 230W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 230W
  • Switching Energy: 630µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 193nC
  • Td (on/off) @ 25°C: 30ns/258ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存6,448
650V
80A
120A
1.7V @ 15V, 40A
230W
630µJ (on), 140µJ (off)
Standard
193nC
30ns/258ns
400V, 20A, 10 Ohm, 15V
90ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IKP20N60T
Infineon Technologies

IGBT 600V 40A 166W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存242,676
600V
40A
60A
2.05V @ 15V, 20A
166W
770µJ
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
41ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot FGL60N100BNTDTU
Fairchild/ON Semiconductor

IGBT 1000V 60A 180W TO264

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
  • Power - Max: 180W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 140ns/630ns
  • Test Condition: 600V, 60A, 51 Ohm, 15V
  • Reverse Recovery Time (trr): 1.2µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存190,404
1000V
60A
120A
2.9V @ 15V, 60A
180W
-
Standard
275nC
140ns/630ns
600V, 60A, 51 Ohm, 15V
1.2µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot STGB6NC60HDT4
STMicroelectronics

IGBT 600V 15A 56W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 21ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存168,360
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
21ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT50GT120B2RG
Microsemi Corporation

IGBT 1200V 94A 625W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 94A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 625W
  • Switching Energy: 2330µJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 24ns/230ns
  • Test Condition: 800V, 50A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: -
封裝: TO-247-3
庫存9,108
1200V
94A
150A
3.7V @ 15V, 50A
625W
2330µJ (off)
Standard
340nC
24ns/230ns
800V, 50A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
-
IRG4PH50KDPBF
Infineon Technologies

IGBT 1200V 45A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A
  • Power - Max: 200W
  • Switching Energy: 3.83mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 87ns/140ns
  • Test Condition: 800V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存61,278
1200V
45A
90A
3.5V @ 15V, 24A
200W
3.83mJ (on), 1.9mJ (off)
Standard
180nC
87ns/140ns
800V, 24A, 5 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
DGTD65T15H2TF
Diodes Incorporated

IGBT FIELD STP 650V 30A ITO220AB

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 48 W
  • Switching Energy: 270µJ (on), 86µJ (off)
  • Input Type: Standard
  • Gate Charge: 61 nC
  • Td (on/off) @ 25°C: 19ns/128ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 150 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
封裝: -
庫存882
650 V
30 A
60 A
2V @ 15V, 15A
48 W
270µJ (on), 86µJ (off)
Standard
61 nC
19ns/128ns
400V, 15A, 10Ohm, 15V
150 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
IRGC15B60KD
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 130 ns
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
15 A
-
-
-
-
Standard
-
-
-
130 ns
-55°C ~ 150°C
Surface Mount
Die
Die
IXA4IF1200UC-TRL
IXYS

IGBT 1200V 9A 45W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
  • Power - Max: 45 W
  • Switching Energy: 400µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 12 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 3A, 330Ohm, 15V
  • Reverse Recovery Time (trr): 350 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封裝: -
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1200 V
9 A
-
2.1V @ 15V, 3A
45 W
400µJ (on), 300µJ (off)
Standard
12 nC
-
600V, 3A, 330Ohm, 15V
350 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
SIGC10T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
HGTP7N60C3
Harris Corporation

14A, 600V, UFS SERIES N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 56 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 60 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: -
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600 V
14 A
56 A
2V @ 15V, 7A
60 W
-
Standard
30 nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGP36N60A3
IXYS

IGBT

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
  • Power - Max: 220 W
  • Switching Energy: 740µJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 80 nC
  • Td (on/off) @ 25°C: 18ns/330ns
  • Test Condition: 400V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 23 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封裝: -
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600 V
-
200 A
1.4V @ 15V, 30A
220 W
740µJ (on), 3mJ (off)
Standard
80 nC
18ns/330ns
400V, 30A, 5Ohm, 15V
23 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
AIGB15N65H5ATMA1
Infineon Technologies

IGBT NPT 650V 30A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105 W
  • Switching Energy: 0.16mJ (on), 0.04mJ (off)
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 24ns/22ns
  • Test Condition: 400V, 7.5A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封裝: -
庫存2,904
650 V
30 A
45 A
2.1V @ 15V, 15A
105 W
0.16mJ (on), 0.04mJ (off)
Standard
40 nC
24ns/22ns
400V, 7.5A, 39Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IGC13T120T8LX1SA1
Infineon Technologies

IGBT 1200V 10A SAWN ON FOIL

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 8A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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1200 V
-
30 A
2.07V @ 15V, 8A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYP60N65A5
IXYS

IGBT PT 650V 134A TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 134 A
  • Current - Collector Pulsed (Icm): 260 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
  • Power - Max: 395 W
  • Switching Energy: 600µJ (on), 1.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: 28ns/230ns
  • Test Condition: 400V, 36A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封裝: -
庫存921
650 V
134 A
260 A
1.35V @ 15V, 36A
395 W
600µJ (on), 1.45mJ (off)
Standard
128 nC
28ns/230ns
400V, 36A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)