電晶體 - IGBT - 單

IRG7CH73K10EF-R

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 420nC
• Td (on/off) @ 25°C: 105ns/45ns
• Test Condition: 600V, 75A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: Die

IRGS4610DTRRPBF

Infineon Technologies

IGBT 600V 16A 77W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGP4066-EPBF

Infineon Technologies

IGBT 600V 140A 454W TO247AD

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 454W
• Switching Energy: 2.47mJ (on), 2.16mJ (off)
• Input Type: Standard
• Gate Charge: 150nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

SGP15N60XKSA1

Infineon Technologies

IGBT 600V 31A 139W TO220-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 62A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 139W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 76nC
• Td (on/off) @ 25°C: 32ns/234ns
• Test Condition: 400V, 15A, 21 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3

IRG4BC20FD-SPBF

Infineon Technologies

IGBT 600V 16A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 64A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 250µJ (on), 640µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 43ns/240ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4PC50K

Infineon Technologies

IGBT 600V 52A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 52A
• Current - Collector Pulsed (Icm): 104A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 490µJ (on), 680µJ (off)
• Input Type: Standard
• Gate Charge: 200nC
• Td (on/off) @ 25°C: 38ns/160ns
• Test Condition: 480V, 30A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IRGPH40F

Infineon Technologies

IGBT FAST 1200V 29A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 29A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 17A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IXGX40N60BD1

IXYS

IGBT 600V 75A 250W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 250W
• Switching Energy: 2.7mJ (off)
• Input Type: Standard
• Gate Charge: 116nC
• Td (on/off) @ 25°C: 25ns/180ns
• Test Condition: 480V, 40A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

封裝: TO-247-3

IXGR24N60C

IXYS

IGBT 600V 42A 80W ISOPLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
• Power - Max: 80W
• Switching Energy: 240µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 15ns/75ns
• Test Condition: 480V, 24A, 18 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

封裝: ISOPLUS247?

SGR15N40LTF

Fairchild/ON Semiconductor

IGBT 400V 45W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 130A
• Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 130A
• Power - Max: 45W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

SGR2N60UFDTF

Fairchild/ON Semiconductor

IGBT 600V 2.4A 25W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 2.4A
• Current - Collector Pulsed (Icm): 10A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
• Power - Max: 25W
• Switching Energy: 30µJ (on), 13µJ (off)
• Input Type: Standard
• Gate Charge: 9nC
• Td (on/off) @ 25°C: 15ns/80ns
• Test Condition: 300V, 1.2A, 200 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IXYH12N250CV1HV

IXYS

IGBT 2500V 28A TO247HV

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
• Power - Max: 310W
• Switching Energy: 3.56mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 56nC
• Td (on/off) @ 25°C: 12ns/167ns
• Test Condition: 1250V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 16ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封裝: TO-247-3

IXYT80N90C3

IXYS

IGBT 900V 165A 830W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 165A
• Current - Collector Pulsed (Icm): 360A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
• Power - Max: 830W
• Switching Energy: 4.3mJ (on), 1.9mJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 34ns/90ns
• Test Condition: 450V, 80A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

RJH60A83RDPE-00#J3

Renesas Electronics America

IGBT 600V 20A 52W LDPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
• Power - Max: 52W
• Switching Energy: 230µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 19.7nC
• Td (on/off) @ 25°C: 31ns/54ns
• Test Condition: 300V, 10A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 130ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-83
• Supplier Device Package: 4-LDPAK

封裝: SC-83

IRG4BC15UDPBF

Infineon Technologies

IGBT 600V 14A 49W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

RGT80TS65DGC11

Rohm Semiconductor

IGBT 650V 70A 234W TO-247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 234W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 79nC
• Td (on/off) @ 25°C: 34ns/119ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 58ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: TO-247-3

APT35GN120BG

Microsemi Corporation

IGBT 1200V 94A 379W TO247

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 94A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 379W
• Switching Energy: 2.315mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 24ns/300ns
• Test Condition: 800V, 35A, 2.2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封裝: TO-247-3

IXGH32N120A3

IXYS

IGBT 1200V 75A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
• Power - Max: 300W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 89nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

STGWT80H65FB

STMicroelectronics

IGBT 650V 120A 469W TO3P-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
• Power - Max: 469W
• Switching Energy: 2.1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 414nC
• Td (on/off) @ 25°C: 84ns/280ns
• Test Condition: 400V, 80A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

封裝: TO-3P-3, SC-65-3

STGW40H120DF2

STMicroelectronics

IGBT 1200V 40A HS TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
• Power - Max: 468W
• Switching Energy: 1mJ (on), 1.32mJ (off)
• Input Type: Standard
• Gate Charge: 187nC
• Td (on/off) @ 25°C: 18ns/152ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 488ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

MIW40N65AT0Y-BP

Micro Commercial Co

IGBT TRENCH FS 650V 80A TO247AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
• Power - Max: 187 W
• Switching Energy: 1.27mJ (on), 460µJ (off)
• Input Type: -
• Gate Charge: 200 nC
• Td (on/off) @ 25°C: 19ns/129ns
• Test Condition: 300V, 40A, 20Ohm, 15V
• Reverse Recovery Time (trr): 68 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AB

封裝: -

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APT35GN120SG-TR

Microchip Technology

IGBT NPT FS 1200V 84A D3PAK

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 84 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
• Power - Max: 379 W
• Switching Energy: -, 2.315mJ (off)
• Input Type: Standard
• Gate Charge: 220 nC
• Td (on/off) @ 25°C: 24ns/300ns
• Test Condition: 800V, 35A, 2.2Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: D3PAK

封裝: -

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HGTP7N60A4-F102

onsemi

IGBT 600V 34A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 34 A
• Current - Collector Pulsed (Icm): 56 A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
• Power - Max: 125 W
• Switching Energy: 55µJ (on), 150µJ (off)
• Input Type: Standard
• Gate Charge: 60 nC
• Td (on/off) @ 25°C: 11ns/100ns
• Test Condition: 390V, 7A, 25Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

封裝: -

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FGH15T120SMD-F155

onsemi

IGBT TRENCH FS 1200V 30A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 333 W
• Switching Energy: 1.15mJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 128 nC
• Td (on/off) @ 25°C: 32ns/490ns
• Test Condition: 600V, 15A, 34Ohm, 15V
• Reverse Recovery Time (trr): 72 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: -

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PCFF30S65W

onsemi

IGBT FIELD STOP 650V 60A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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HGT4E30N60C3S

Harris Corporation

IGBT 60A, 600V, N CHANNEL, TO 26

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IXDA20N120AS-TUB

IXYS

IGBT

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 38 A
• Current - Collector Pulsed (Icm): 35 A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 200 W
• Switching Energy: 3.1mJ (on), 2.4mJ (off)
• Input Type: Standard
• Gate Charge: 70 nC
• Td (on/off) @ 25°C: 100ns/500ns
• Test Condition: 600V, 20A, 82Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA

封裝: -

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RGS80TSX2GC11

Rohm Semiconductor

IGBT TRENCH FS 1200V 80A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 555 W
• Switching Energy: 3mJ (on), 3.1mJ (off)
• Input Type: Standard
• Gate Charge: 104 nC
• Td (on/off) @ 25°C: 49ns/199ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -