頁 132 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  132/158
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4760-EPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,528
650V
90A
144A
2V @ 15V, 48A
325W
1.7mJ (on), 1mJ (off)
Standard
145nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG6IC30U-110P
Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.38V @ 15V, 120A
  • Power - Max: 43W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封裝: TO-220-3 Full Pack
庫存6,608
330V
28A
-
2.38V @ 15V, 120A
43W
-
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRGPC30FD2
Infineon Technologies

IGBT W/DIODE 600V 31A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存7,632
600V
31A
-
2.1V @ 15V, 17A
100W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT15GN120KG
Microsemi Corporation

IGBT 1200V 45A 195W TO220

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 195W
  • Switching Energy: 410µJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 10ns/150ns
  • Test Condition: 800V, 15A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
封裝: TO-220-3
庫存5,920
1200V
45A
45A
2.1V @ 15V, 15A
195W
410µJ (on), 950µJ (off)
Standard
90nC
10ns/150ns
800V, 15A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
STGD6NC60HT4
STMicroelectronics

IGBT 600V 15A 56W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,112
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGH32N60C
IXYS

IGBT 600V 60A 200W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/85ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存3,760
600V
60A
120A
2.5V @ 15V, 32A
200W
320µJ (off)
Standard
110nC
25ns/85ns
480V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IRGP4263-EPBF
Infineon Technologies

IGBT 650V 90A 300W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
  • Power - Max: 300W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存5,808
650V
90A
192A
2.1V @ 15V, 48A
300W
1.7mJ (on), 1mJ (off)
Standard
150nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IXGH30N60C3C1
IXYS

IGBT 600V 60A 220W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 120µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 17ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封裝: TO-247-3
庫存390,000
600V
60A
150A
3V @ 15V, 20A
220W
120µJ (on), 90µJ (off)
Standard
38nC
17ns/42ns
300V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
APT50GR120L
Microsemi Corporation

IGBT 1200V 117A 694W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 50A
  • Power - Max: 694W
  • Switching Energy: 2.14mJ (on), 1.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 445nC
  • Td (on/off) @ 25°C: 28ns/237ns
  • Test Condition: 600V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
封裝: TO-264-3, TO-264AA
庫存4,512
1200V
117A
200A
3.2V @ 15V, 50A
694W
2.14mJ (on), 1.48mJ (off)
Standard
445nC
28ns/237ns
600V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
IXYP30N120C3
IXYS

IGBT 1200V 75A 500W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 145A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
  • Power - Max: 500W
  • Switching Energy: 2.6mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: 19ns/130ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存3,312
1200V
75A
145A
3.3V @ 15V, 30A
500W
2.6mJ (on), 1.1mJ (off)
Standard
69nC
19ns/130ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTD21T65F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 650V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存3,568
650V
-
200A
1.9V @ 15V, 45A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
RJH60A83RDPP-M0#T2
Renesas Electronics America

IGBT 600V 20A 30W TO-220FL

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
  • Power - Max: 30W
  • Switching Energy: 230µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 19.7nC
  • Td (on/off) @ 25°C: 31ns/54ns
  • Test Condition: 300V, 10A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FL
封裝: TO-220-3 Full Pack
庫存6,000
600V
20A
-
2.6V @ 15V, 10A
30W
230µJ (on), 160µJ (off)
Standard
19.7nC
31ns/54ns
300V, 10A, 5 Ohm, 15V
130ns
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FL
hot FGA15S125P
Fairchild/ON Semiconductor

IGBT 1250V 30A 136W TO3PN

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.72V @ 15V, 15A
  • Power - Max: 136W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 129nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封裝: TO-3P-3, SC-65-3
庫存103,584
1250V
30A
45A
2.72V @ 15V, 15A
136W
-
Standard
129nC
-
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot IRG4PC50UD-EPBF
Infineon Technologies

IGBT 600V 55A 200W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 990µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存6,448
600V
55A
220A
2V @ 15V, 27A
200W
990µJ (on), 590µJ (off)
Standard
180nC
46ns/140ns
480V, 27A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot FGB3040CS
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO263-6

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: -/4.7µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Supplier Device Package: TO-263-6
封裝: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
庫存140,088
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
15nC
-/4.7µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
TO-263-6
IGP40N65F5XKSA1
Infineon Technologies

IGBT 650V 74A 255W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 360µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
封裝: TO-220-3
庫存13,656
650V
74A
120A
2.1V @ 15V, 40A
255W
360µJ (on), 100µJ (off)
Standard
95nC
19ns/160ns
400V, 20A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
FGB20N60SFD
Fairchild/ON Semiconductor

IGBT 600V 40A 208W D2PAK

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 208W
  • Switching Energy: 370µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 13ns/90ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,776
600V
40A
60A
2.8V @ 15V, 20A
208W
370µJ (on), 160µJ (off)
Standard
65nC
13ns/90ns
400V, 20A, 10 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
STGD20N40LZ
STMicroelectronics

IGBT 390V 25A 125W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 700ns/4.3µs
  • Test Condition: 300V, 10A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存18,930
390V
25A
40A
1.6V @ 4V, 6A
125W
-
Logic
24nC
700ns/4.3µs
300V, 10A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot IRGB15B60KDPBF
Infineon Technologies

IGBT 600V 31A 208W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存329,304
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
RGTVX6TS65DGC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 144A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 144 A
  • Current - Collector Pulsed (Icm): 320 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A
  • Power - Max: 404 W
  • Switching Energy: 2.65mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 171 nC
  • Td (on/off) @ 25°C: 45ns/201ns
  • Test Condition: 400V, 80A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 109 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存1,161
650 V
144 A
320 A
1.9V @ 15V, 80A
404 W
2.65mJ (on), 1.8mJ (off)
Standard
171 nC
45ns/201ns
400V, 80A, 10Ohm, 15V
109 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGH75T65SQDT_F155
onsemi

650V FS4 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 375 W
  • Switching Energy: 300µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: 23ns/120ns
  • Test Condition: 400V, 18.8A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 76 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: -
Request a Quote
650 V
150 A
300 A
2.1V @ 15V, 75A
375 W
300µJ (on), 70µJ (off)
Standard
128 nC
23ns/120ns
400V, 18.8A, 4.7Ohm, 15V
76 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IKWH50N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 85A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 205 W
  • Switching Energy: 1.5mJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 144 nC
  • Td (on/off) @ 25°C: 40ns/351ns
  • Test Condition: 400V, 50A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封裝: -
庫存1,434
650 V
85 A
150 A
1.85V @ 15V, 50A
205 W
1.5mJ (on), 730µJ (off)
Standard
144 nC
40ns/351ns
400V, 50A, 22Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IXYX40N450HV
IXYS

IGBT 4500V 95A TO247PLUS-HV

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 350 A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
  • Power - Max: 660 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 170 nC
  • Td (on/off) @ 25°C: 36ns/110ns
  • Test Condition: 960V, 40A, 2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247PLUS-HV
封裝: -
Request a Quote
4500 V
95 A
350 A
3.9V @ 15V, 40A
660 W
-
Standard
170 nC
36ns/110ns
960V, 40A, 2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
TO-247PLUS-HV
IKZA75N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 338 W
  • Switching Energy: 0.75mJ (on), 0.84mJ (off)
  • Input Type: Standard
  • Gate Charge: 152 nC
  • Td (on/off) @ 25°C: 26ns/199ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 56 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
封裝: -
庫存642
650 V
80 A
300 A
1.65V @ 15V, 75A
338 W
0.75mJ (on), 0.84mJ (off)
Standard
152 nC
26ns/199ns
400V, 75A, 10Ohm, 15V
56 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
MMIX1G320N60B3
IXYS

IGBT PT 600V 400A 24SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 400 A
  • Current - Collector Pulsed (Icm): 1000 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Power - Max: 1000 W
  • Switching Energy: 2.7mJ (on), 5mJ (off)
  • Input Type: Standard
  • Gate Charge: 585 nC
  • Td (on/off) @ 25°C: 44ns/250ns
  • Test Condition: 480V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 66 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封裝: -
Request a Quote
600 V
400 A
1000 A
1.5V @ 15V, 100A
1000 W
2.7mJ (on), 5mJ (off)
Standard
585 nC
44ns/250ns
480V, 100A, 1Ohm, 15V
66 ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
SIGC158T120R3LEX1SA2
Infineon Technologies

IGBT 1200V 150A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
1200 V
-
450 A
2.1V @ 15V, 150A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
RGT8TM65DGC9
Rohm Semiconductor

IGBT TRENCH FLD 650V 5A TO220NFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 5 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 16 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.5 nC
  • Td (on/off) @ 25°C: 17ns/69ns
  • Test Condition: 400V, 4A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NFM
封裝: -
庫存2,601
650 V
5 A
12 A
2.1V @ 15V, 4A
16 W
-
Standard
13.5 nC
17ns/69ns
400V, 4A, 50Ohm, 15V
40 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NFM
BIDW75N65ES5
Bourns Inc.

IGBT TRENCH FS 650V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 394 W
  • Switching Energy: 1.56mJ (on), 1.07mJ (off)
  • Input Type: Standard
  • Gate Charge: 184 nC
  • Td (on/off) @ 25°C: 35ns/194ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 123 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
650 V
150 A
300 A
1.85V @ 15V, 75A
394 W
1.56mJ (on), 1.07mJ (off)
Standard
184 nC
35ns/194ns
400V, 75A, 10Ohm, 15V
123 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247