電晶體 - IGBT - 單

IRG4BC30S

Infineon Technologies

IGBT 600V 34A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
• Power - Max: 100W
• Switching Energy: 260µJ (on), 3.45mJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 22ns/540ns
• Test Condition: 480V, 18A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

SGU20N40LTU

Fairchild/ON Semiconductor

IGBT 400V 45W IPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 8V @ 4.5V, 150A
• Power - Max: 45W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package: I-Pak

封裝: TO-251-3 Short Leads, IPak, TO-251AA

AUIRGP4063D

Infineon Technologies

IGBT 600V 96A 330W TO-247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IRG7CH50K10EF

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 50ns/280ns
• Test Condition: 600V, 35A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: Die

MMIX1X100N60B3H1

IXYS

IGBT 600V 145A 400W SMPD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 145A
• Current - Collector Pulsed (Icm): 440A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
• Power - Max: 400W
• Switching Energy: 1.9mJ (on), 2mJ (off)
• Input Type: Standard
• Gate Charge: 143nC
• Td (on/off) @ 25°C: 30ns/120ns
• Test Condition: 360V, 70A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-PowerSMD, 21 Leads
• Supplier Device Package: 24-SMPD

封裝: 24-PowerSMD, 21 Leads

IXBT42N170A

IXYS

IGBT 1700V 42A 357W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 265A
• Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 21A
• Power - Max: 357W
• Switching Energy: 3.43mJ (on), 430µJ (off)
• Input Type: Standard
• Gate Charge: 188nC
• Td (on/off) @ 25°C: 19ns/200ns
• Test Condition: 850V, 21A, 1 Ohm, 15V
• Reverse Recovery Time (trr): 330ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGH40N120A2

IXYS

IGBT 1200V 75A 360W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 360W
• Switching Energy: 15mJ (off)
• Input Type: Standard
• Gate Charge: 136nC
• Td (on/off) @ 25°C: 22ns/420ns
• Test Condition: 960V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IXGP24N120C3

IXYS

IGBT 1200V 48A 250W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
• Power - Max: 250W
• Switching Energy: 1.16mJ (on), 470µJ (off)
• Input Type: Standard
• Gate Charge: 79nC
• Td (on/off) @ 25°C: 16ns/93ns
• Test Condition: 600V, 20A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IXDP20N60BD1

IXYS

IGBT 600V 32A 140W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
• Power - Max: 140W
• Switching Energy: 900µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: -
• Test Condition: 300V, 20A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IXYP15N65C3D1

IXYS

IGBT 650V 38A 200W TO220

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 38A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 200W
• Switching Energy: 270µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 15ns/68ns
• Test Condition: 400V, 15A, 20 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IXGH48N60C3C1

IXYS

IGBT 600V 75A 300W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 250A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 300W
• Switching Energy: 330µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 77nC
• Td (on/off) @ 25°C: 19ns/60ns
• Test Condition: 400V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封裝: TO-247-3

IXBH32N300

IXYS

IGBT 3000V 80A 400W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
• Power - Max: 400W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 142nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.5µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

封裝: TO-247-3

FGI3236_F085

Fairchild/ON Semiconductor

IGBT 360V 44A 187W I2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 360V
• Current - Collector (Ic) (Max): 44A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
• Power - Max: 187W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 20nC
• Td (on/off) @ 25°C: -/5.4µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

STGW19NC60HD

STMicroelectronics

IGBT 600V 42A 140W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
• Power - Max: 140W
• Switching Energy: 85µJ (on), 189µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 25ns/97ns
• Test Condition: 390V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

封裝: TO-247-3

APT30GS60BRDQ2G

Microsemi Corporation

IGBT 600V 54A 250W SOT227

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 54A
• Current - Collector Pulsed (Icm): 113A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 570µJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 16ns/360ns
• Test Condition: 400V, 30A, 9.1 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

封裝: TO-247-3

IGW50N60H3FKSA1

Infineon Technologies

IGBT 600V 100A 333W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
• Power - Max: 333W
• Switching Energy: 2.36mJ
• Input Type: Standard
• Gate Charge: 315nC
• Td (on/off) @ 25°C: 23ns/235ns
• Test Condition: 400V, 50A, 7 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: TO-247-3

STGP40V60F

STMicroelectronics

IGBT 600V 80A 283W TO220AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 456µJ (on), 411µJ (off)
• Input Type: Standard
• Gate Charge: 226nC
• Td (on/off) @ 25°C: 52ns/208ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封裝: TO-220-3

SHGTG40N60A4

onsemi

SHGTG40N60A4

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 75 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
• Power - Max: 625 W
• Switching Energy: 850µJ (on), 370µJ (off)
• Input Type: Standard
• Gate Charge: 450 nC
• Td (on/off) @ 25°C: 25ns/145ns
• Test Condition: 390V, 40A, 2.2Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: -

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LGB8206ATI

Littelfuse Inc.

IGBT 390V 20A 150W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IXYH20N65C3D1

IXYS

DISC IGBT XPT-GENX4 TO-247AD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 105 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 230 W
• Switching Energy: 430µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 30 nC
• Td (on/off) @ 25°C: 19ns/80ns
• Test Condition: 400V, 20A, 20Ohm, 15V
• Reverse Recovery Time (trr): 34 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXYH)

封裝: -

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RGCL60TS60DGC13

Rohm Semiconductor

IGBT TRNCH FIELD 600V 48A TO247G

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 48 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
• Power - Max: 111 W
• Switching Energy: 770µJ (on), 1.11mJ (off)
• Input Type: Standard
• Gate Charge: 68 nC
• Td (on/off) @ 25°C: 44ns/186ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): 58 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247G

封裝: -

GT40RR21-STA1-E

Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 200 A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 40A
• Power - Max: 230 W
• Switching Energy: -, 540µJ (off)
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: 280V, 40A, 10Ohm, 20V
• Reverse Recovery Time (trr): 600 ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P(N)

封裝: -

IRGC4275B

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 380 nC
• Td (on/off) @ 25°C: 130ns/280ns
• Test Condition: 400V, 200A, 5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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SIGC18T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 36ns/250ns
• Test Condition: 400V, 20A, 16Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: -

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IKP20N60TXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
• Power - Max: 166 W
• Switching Energy: 770µJ
• Input Type: Standard
• Gate Charge: 120 nC
• Td (on/off) @ 25°C: 18ns/199ns
• Test Condition: 400V, 20A, 12Ohm, 15V
• Reverse Recovery Time (trr): 41 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

封裝: -

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IKFW75N65EH5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 240 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
• Power - Max: 148 W
• Switching Energy: 1.8mJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 144 nC
• Td (on/off) @ 25°C: 30ns/206ns
• Test Condition: 400V, 60A, 12Ohm, 15V
• Reverse Recovery Time (trr): 75 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-HSIP247-3-2

封裝: -

IKW40N120CS7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 82A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 82 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 357 W
• Switching Energy: 2.55mJ (on), 1.75mJ (off)
• Input Type: Standard
• Gate Charge: 230 nC
• Td (on/off) @ 25°C: 27ns/190ns
• Test Condition: 600V, 40A, 4Ohm, 15V
• Reverse Recovery Time (trr): 175 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

封裝: -

MIW25N120FA-BP

Micro Commercial Co

IGBT 1200V 25A,TO-247AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 100 A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
• Power - Max: 326 W
• Switching Energy: 1.8mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 200 nC
• Td (on/off) @ 25°C: 158ns/331ns
• Test Condition: 600V, 25A, 18Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AB

封裝: -