頁 111 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  111/158
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庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8P25N120KD-EPBF
Infineon Technologies

IGBT 1200V 40A 180W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 180W
  • Switching Energy: 800µJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/170ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,000
1200V
40A
45A
2V @ 15V, 15A
180W
800µJ (on), 900µJ (off)
Standard
135nC
20ns/170ns
600V, 15A, 10 Ohm, 15V
70ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4BC30FD-STRR
Infineon Technologies

IGBT 600V 31A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,680
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGH30N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 60A 339W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 339W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 730ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: TO-247-3
庫存4,128
1200V
60A
90A
2V @ 15V, 30A
339W
-
Standard
208nC
-
-
730ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGA16N60C2D1
IXYS

IGBT 600V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 16ns/75ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 30ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,784
600V
40A
100A
3V @ 15V, 12A
150W
160µJ (on), 90µJ (off)
Standard
25nC
16ns/75ns
400V, 12A, 22 Ohm, 15V
30ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IKW30N60TAFKSA1
Infineon Technologies

IGBT 600V 60A 187W TO247-3-21

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
  • Power - Max: 187W
  • Switching Energy: 1.46mJ
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 23ns/254ns
  • Test Condition: 400V, 30A, 10.6 Ohm, 15V
  • Reverse Recovery Time (trr): 143ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存3,824
600V
60A
90A
2.05V @ 15V, 30A
187W
1.46mJ
Standard
167nC
23ns/254ns
400V, 30A, 10.6 Ohm, 15V
143ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRGSL15B60KDPBF
Infineon Technologies

IGBT 600V 31A 208W TO262

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存16,524
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
PG-TO262-3
IRG4PC30SPBF
Infineon Technologies

IGBT 600V 34A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存3,968
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXXX300N60C3
IXYS

IGBT 600V 510A 2300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 510A
  • Current - Collector Pulsed (Icm): 1075A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 2300W
  • Switching Energy: 3.35mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 438nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存2,640
600V
510A
1075A
2V @ 15V, 100A
2300W
3.35mJ (on), 1.9mJ (off)
Standard
438nC
50ns/160ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGX82N120B3
IXYS

IGBT 1200V 230A 1250W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 230A
  • Current - Collector Pulsed (Icm): 500A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
  • Power - Max: 1250W
  • Switching Energy: 5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: 30ns/210ns
  • Test Condition: 600V, 80A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存2,400
1200V
230A
500A
3.2V @ 15V, 82A
1250W
5mJ (on), 3.3mJ (off)
Standard
350nC
30ns/210ns
600V, 80A, 2 Ohm, 15V
-
-
Through Hole
TO-247-3
PLUS247?-3
IXYX140N90C3
IXYS

IGBT 900V 310A 1630W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 310A
  • Current - Collector Pulsed (Icm): 840A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
  • Power - Max: 1630W
  • Switching Energy: 4.3mJ (on), 4mJ (off)
  • Input Type: Standard
  • Gate Charge: 330nC
  • Td (on/off) @ 25°C: 40ns/145ns
  • Test Condition: 450V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存7,632
900V
310A
840A
2.7V @ 15V, 140A
1630W
4.3mJ (on), 4mJ (off)
Standard
330nC
40ns/145ns
450V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
FGH12040WD_F155
Fairchild/ON Semiconductor

1200V 40A FS2 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 428W
  • Switching Energy: 4.1mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 226nC
  • Td (on/off) @ 25°C: 45ns/560ns
  • Test Condition: 600V, 40A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 71ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存6,352
1200V
80A
100A
2.9V @ 15V, 40A
428W
4.1mJ (on), 1mJ (off)
Standard
226nC
45ns/560ns
600V, 40A, 23 Ohm, 15V
71ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RJH60F0DPK-00#T0
Renesas Electronics America

IGBT 600V 50A 201.6W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.82V @ 15V, 25A
  • Power - Max: 201.6W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 46ns/70ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存3,696
600V
50A
-
1.82V @ 15V, 25A
201.6W
-
Standard
-
46ns/70ns
400V, 30A, 5 Ohm, 15V
140ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
STGF20M65DF2
STMicroelectronics

IGBT TRENCH 650V 40A TO220FP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 32.6W
  • Switching Energy: 140µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 26ns/108ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 166ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封裝: TO-220-3 Full Pack
庫存2,544
650V
40A
80A
2V @ 15V, 20A
32.6W
140µJ (on), 560µJ (off)
Standard
63nC
26ns/108ns
400V, 20A, 12 Ohm, 15V
166ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
NGTB15N60EG
ON Semiconductor

IGBT 600V 30A 117W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 15A
  • Power - Max: 117W
  • Switching Energy: 900µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 78ns/130ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 270ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封裝: TO-220-3
庫存3,248
600V
30A
120A
1.95V @ 15V, 15A
117W
900µJ (on), 300µJ (off)
Standard
80nC
78ns/130ns
400V, 15A, 22 Ohm, 15V
270ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGWA25S120DF3
STMicroelectronics

IGBT 1200V 25A TO247-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 830µJ (on), 2.37mJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31ns/147ns
  • Test Condition: 600V, 25A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 265ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存6,804
1200V
50A
100A
2.1V @ 15V, 25A
375W
830µJ (on), 2.37mJ (off)
Standard
80nC
31ns/147ns
600V, 25A, 15 Ohm, 15V
265ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXBX75N170
IXYS

IGBT 1700V 200A 1040W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
  • Power - Max: 1040W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封裝: TO-247-3
庫存3,328
1700V
200A
580A
3.1V @ 15V, 75A
1040W
-
Standard
350nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IRG4IBC20WPBF
Infineon Technologies

IGBT 600V 12A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 34W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
封裝: TO-220-3 Full Pack
庫存8,220
600V
12A
52A
2.6V @ 15V, 6.5A
34W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
STGB30V60F
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, V S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 260W
  • Switching Energy: 383µJ (on), 233µJ (off)
  • Input Type: Standard
  • Gate Charge: 163nC
  • Td (on/off) @ 25°C: 45ns/189ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存22,872
600V
60A
120A
2.3V @ 15V, 30A
260W
383µJ (on), 233µJ (off)
Standard
163nC
45ns/189ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKW20N60TFKSA1
Infineon Technologies

IGBT 600V 40A 166W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存6,432
600V
40A
60A
2.05V @ 15V, 20A
166W
770µJ
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
41ns
-
Through Hole
TO-247-3
PG-TO247-3
IKFW90N65ES5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A HSIP247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
  • Power - Max: 154 W
  • Switching Energy: 2.5mJ (on), 990µJ (off)
  • Input Type: Standard
  • Gate Charge: 165 nC
  • Td (on/off) @ 25°C: 42ns/151ns
  • Test Condition: 400V, 75A, 16Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-HSIP247-3-2
封裝: -
庫存714
650 V
80 A
300 A
1.75V @ 15V, 75A
154 W
2.5mJ (on), 990µJ (off)
Standard
165 nC
42ns/151ns
400V, 75A, 16Ohm, 15V
89 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-HSIP247-3-2
IHW40N140R5LXKSA1
Infineon Technologies

IGBT 1400V 80A TO247-44

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
  • Power - Max: 366 W
  • Switching Energy: -, 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 260 nC
  • Td (on/off) @ 25°C: -/225ns
  • Test Condition: 25V, 40A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
封裝: -
庫存639
1400 V
80 A
120 A
1.95V @ 15V, 40A
366 W
-, 240µJ (off)
Standard
260 nC
-/225ns
25V, 40A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
IRGC75B60UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
Request a Quote
600 V
75 A
-
2.9V @ 15V, 75A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
HGTG12N60D1D
Harris Corporation

UFS SERIES N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
600 V
21 A
48 A
2.5V @ 15V, 12A
75 W
-
Standard
70 nC
-
-
60 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
GT30J65MRB-S1E
Toshiba Semiconductor and Storage

650V SILICON N-CHANNEL IGBT, TO-

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 200 W
  • Switching Energy: 1.4mJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 75ns/400ns
  • Test Condition: 400V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
封裝: -
庫存237
650 V
60 A
-
1.8V @ 15V, 30A
200 W
1.4mJ (on), 220µJ (off)
Standard
70 nC
75ns/400ns
400V, 15A, 56Ohm, 15V
200 ns
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
HGT1S12N60C3DS
Fairchild Semiconductor

IGBT, 24A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 24 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 104 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 71 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 32 ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封裝: -
Request a Quote
600 V
24 A
96 A
2.2V @ 15V, 15A
104 W
-
Standard
71 nC
-
-
32 ns
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
IXYP30N120A4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 106 A
  • Current - Collector Pulsed (Icm): 184 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 15ns/235ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 (IXYP)
封裝: -
Request a Quote
1200 V
106 A
184 A
1.9V @ 15V, 25A
500 W
4mJ (on), 3.4mJ (off)
Standard
57 nC
15ns/235ns
960V, 25A, 5Ohm, 15V
42 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220 (IXYP)
MMIX1Y82N120C3H1
IXYS

DISC IGBT SMPD PKG-STANDARD SMPD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 320 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A
  • Power - Max: 320 W
  • Switching Energy: 4.95mJ (on), 2.78mJ (off)
  • Input Type: Standard
  • Gate Charge: 215 nC
  • Td (on/off) @ 25°C: 29ns/192ns
  • Test Condition: 600V, 80A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 78 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-PowerSMD, 21 Leads
  • Supplier Device Package: 24-SMPD
封裝: -
Request a Quote
1200 V
78 A
320 A
3.4V @ 15V, 82A
320 W
4.95mJ (on), 2.78mJ (off)
Standard
215 nC
29ns/192ns
600V, 80A, 2Ohm, 15V
78 ns
-55°C ~ 150°C (TJ)
Surface Mount
24-PowerSMD, 21 Leads
24-SMPD
HGTB12N60D1C
Harris Corporation

12A, 600V N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220-5
封裝: -
Request a Quote
600 V
12 A
40 A
2.7V @ 15V, 10A
75 W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-5
TO-220-5