頁 110 - 電晶體 - IGBT - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - IGBT - 單

記錄 4,424
頁  110/158
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封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP6640DPBF
Infineon Technologies

IGBT 600V 53A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 53A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 200W
  • Switching Energy: 300µJ (on), 840µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 40ns/100ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存5,616
600V
53A
72A
1.95V @ 15V, 24A
200W
300µJ (on), 840µJ (off)
Standard
50nC
40ns/100ns
400V, 24A, 10 Ohm, 15V
70ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC30K-STRLP
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 360µJ (on), 510µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,008
600V
28A
56A
2.7V @ 15V, 16A
100W
360µJ (on), 510µJ (off)
Standard
67nC
26ns/130ns
480V, 16A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
SGP10N60AXKSA1
Infineon Technologies

IGBT 600V 20A 92W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
  • Power - Max: 92W
  • Switching Energy: 320µJ
  • Input Type: Standard
  • Gate Charge: 52nC
  • Td (on/off) @ 25°C: 28ns/178ns
  • Test Condition: 400V, 10A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存3,552
600V
20A
40A
2.4V @ 15V, 10A
92W
320µJ
Standard
52nC
28ns/178ns
400V, 10A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
SGP06N60XKSA1
Infineon Technologies

IGBT 600V 12A 68W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
  • Power - Max: 68W
  • Switching Energy: 215µJ
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 25ns/220ns
  • Test Condition: 400V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存2,000
600V
12A
24A
2.4V @ 15V, 6A
68W
215µJ
Standard
32nC
25ns/220ns
400V, 6A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4BC20MD-SPBF
Infineon Technologies

IGBT 600V 18A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 11A
  • Power - Max: 60W
  • Switching Energy: 410µJ (on), 2.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 39nC
  • Td (on/off) @ 25°C: 21ns/463ns
  • Test Condition: 480V, 11A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存43,800
600V
18A
36A
2.1V @ 15V, 11A
60W
410µJ (on), 2.03mJ (off)
Standard
39nC
21ns/463ns
480V, 11A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC20K-S
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 150µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,656
600V
16A
32A
2.8V @ 15V, 9A
60W
150µJ (on), 250µJ (off)
Standard
34nC
28ns/150ns
480V, 9A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGQ150N30TC
IXYS

IGBT 300V 150A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封裝: TO-3P-3, SC-65-3
庫存6,864
300V
150A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3P
FGPF70N33BTTU
Fairchild/ON Semiconductor

IGBT 330V 48W TO220F

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
  • Power - Max: 48W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
封裝: TO-220-3 Full Pack
庫存5,152
330V
-
220A
1.7V @ 15V, 70A
48W
-
Standard
49nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
APT33GF120LRDQ2G
Microsemi Corporation

IGBT 1200V 64A 357W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
  • Power - Max: 357W
  • Switching Energy: 1.315mJ (on), 1.515mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 14ns/185ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 [L]
封裝: TO-264-3, TO-264AA
庫存7,888
1200V
64A
75A
3V @ 15V, 25A
357W
1.315mJ (on), 1.515mJ (off)
Standard
170nC
14ns/185ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 [L]
HGTG12N60B3
Fairchild/ON Semiconductor

IGBT 600V 27A 104W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 27A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 104W
  • Switching Energy: 150µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 26ns/150ns
  • Test Condition: 480V, 12A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存7,472
600V
27A
110A
2.1V @ 15V, 12A
104W
150µJ (on), 250µJ (off)
Standard
51nC
26ns/150ns
480V, 12A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
AIHD03N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,672
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXGK120N120B3
IXYS

IGBT 1200V 200A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 370A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 5.5mJ (on), 5.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 36ns/275ns
  • Test Condition: 600V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封裝: TO-264-3, TO-264AA
庫存5,888
1200V
200A
370A
3V @ 15V, 100A
830W
5.5mJ (on), 5.8mJ (off)
Standard
470nC
36ns/275ns
600V, 100A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
IXGA20N120
IXYS

IGBT 1200V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 6.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 28ns/400ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,920
1200V
40A
80A
2.5V @ 15V, 20A
150W
6.5mJ (off)
Standard
63nC
28ns/400ns
800V, 20A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IXXH60N65C4
IXYS

IGBT 650V 118A 455W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 118A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 60A
  • Power - Max: 455W
  • Switching Energy: 3.2mJ (on), 830µJ (off)
  • Input Type: Standard
  • Gate Charge: 94nC
  • Td (on/off) @ 25°C: 37ns/133ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
封裝: TO-247-3
庫存3,472
650V
118A
240A
2.2V @ 15V, 60A
455W
3.2mJ (on), 830µJ (off)
Standard
94nC
37ns/133ns
400V, 60A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
hot AOD5B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 10A 54.4W TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
  • Power - Max: 54.4W
  • Switching Energy: 140µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 9.4nC
  • Td (on/off) @ 25°C: 12ns/82ns
  • Test Condition: 400V, 5A, 60 Ohm, 15V
  • Reverse Recovery Time (trr): 98ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252, (D-Pak)
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存96,708
600V
23A
20A
1.8V @ 15V, 5A
54.4W
140µJ (on), 40µJ (off)
Standard
9.4nC
12ns/82ns
400V, 5A, 60 Ohm, 15V
98ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252, (D-Pak)
hot STGW80H65FB
STMicroelectronics

IGBT 650V 120A 469W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 469W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 414nC
  • Td (on/off) @ 25°C: 84ns/280ns
  • Test Condition: 400V, 80A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存3,840
650V
120A
240A
2V @ 15V, 80A
469W
2.1mJ (on), 1.5mJ (off)
Standard
414nC
84ns/280ns
400V, 80A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGFW40H65FB
STMicroelectronics

IGBT HB 650V 40A ISOWATT218

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 62.5W
  • Switching Energy: 498µJ (on), 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF-3
封裝: TO-3P-3 Full Pack
庫存8,712
650V
80A
160A
2V @ 15V, 40A
62.5W
498µJ (on), 363µJ (off)
Standard
210nC
40ns/142ns
400V, 40A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF-3
IRG7PH42UD-EP
Infineon Technologies

IGBT 1200V 85A 320W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 320W
  • Switching Energy: 2.11mJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 25ns/229ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 153ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,896
1200V
85A
90A
2V @ 15V, 30A
320W
2.11mJ (on), 1.18mJ (off)
Standard
157nC
25ns/229ns
600V, 30A, 10 Ohm, 15V
153ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IXGK120N120A3
IXYS

IGBT 1200V 240A 830W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
  • Power - Max: 830W
  • Switching Energy: 10mJ (on), 33mJ (off)
  • Input Type: Standard
  • Gate Charge: 420nC
  • Td (on/off) @ 25°C: 40ns/490ns
  • Test Condition: 960V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封裝: TO-264-3, TO-264AA
庫存7,296
1200V
240A
600A
2.2V @ 15V, 100A
830W
10mJ (on), 33mJ (off)
Standard
420nC
40ns/490ns
960V, 100A, 1 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
hot IRG4PF50WDPBF
Infineon Technologies

IGBT 900V 51A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): 204A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: 2.63mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 71ns/150ns
  • Test Condition: 720V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存270,336
900V
51A
204A
2.7V @ 15V, 28A
200W
2.63mJ (on), 1.34mJ (off)
Standard
160nC
71ns/150ns
720V, 28A, 5 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
PCG20N60A4W-R4800
onsemi

IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LGD8209TI
Littelfuse Inc.

IGBT 410V 12A 125W DPAK-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGTH50TS65DGC13
Rohm Semiconductor

IGBT TRNCH FIELD 650V 50A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 174 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
封裝: -
庫存1,800
650 V
50 A
100 A
2.1V @ 15V, 25A
174 W
-
Standard
49 nC
27ns/94ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
APT80GA90S
Microchip Technology

IGBT PT 900V 145A D3PAK

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 145 A
  • Current - Collector Pulsed (Icm): 239 A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
  • Power - Max: 625 W
  • Switching Energy: 1.625mJ (on), 1.389mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 18ns/149ns
  • Test Condition: 600V, 47A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: D3PAK
封裝: -
庫存471
900 V
145 A
239 A
3.1V @ 15V, 47A
625 W
1.625mJ (on), 1.389mJ (off)
Standard
200 nC
18ns/149ns
600V, 47A, 4.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D3PAK
RGTV80TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 78A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 78 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 234 W
  • Switching Energy: 1.02mJ (on), 710µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 39ns/113ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 101 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封裝: -
庫存1,350
650 V
78 A
160 A
1.9V @ 15V, 40A
234 W
1.02mJ (on), 710µJ (off)
Standard
81 nC
39ns/113ns
400V, 40A, 10Ohm, 15V
101 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RJP30H1DPP-M1-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKFW90N60EH3XKSA1
Infineon Technologies

IGBT TRENCH FS 600V 77A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 77 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
  • Power - Max: 178 W
  • Switching Energy: 2.65mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 440 nC
  • Td (on/off) @ 25°C: 32ns/210ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 107 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
封裝: -
庫存732
600 V
77 A
300 A
2.3V @ 15V, 75A
178 W
2.65mJ (on), 1.3mJ (off)
Standard
440 nC
32ns/210ns
400V, 75A, 5Ohm, 15V
107 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
BIDW75N65EH5
Bourns Inc.

IGBT TRENCH FS 650V 150A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
  • Power - Max: 394 W
  • Switching Energy: 2.39mJ (on), .90mJ (off)
  • Input Type: Standard
  • Gate Charge: 186 nC
  • Td (on/off) @ 25°C: 39ns/186ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 120 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
Request a Quote
650 V
150 A
300 A
2.2V @ 15V, 75A
394 W
2.39mJ (on), .90mJ (off)
Standard
186 nC
39ns/186ns
400V, 75A, 10Ohm, 15V
120 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247