頁 494 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  494/1,502
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庫存
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IRF6728MTR1PBF
Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封裝: DirectFET? Isometric MX
庫存5,008
MOSFET (Metal Oxide)
30V
23A (Ta), 140A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4110pF @ 15V
±20V
-
2.1W (Ta), 75W (Tc)
2.5 mOhm @ 23A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
IRF7521D1PBF
Infineon Technologies

MOSFET N-CH 20V 2.4A MICRO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8?
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
庫存6,480
MOSFET (Metal Oxide)
20V
2.4A (Ta)
2.7V, 4.5V
700mV @ 250µA
8nC @ 4.5V
260pF @ 15V
±12V
Schottky Diode (Isolated)
1.3W (Ta)
135 mOhm @ 1.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro8?
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IPF04N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5199pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: P-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,280
MOSFET (Metal Oxide)
25V
50A (Tc)
4.5V, 10V
2V @ 30µA
41nC @ 5V
5199pF @ 15V
±20V
-
115W (Tc)
3.8 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
P-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
JANTXV2N6802
Microsemi Corporation

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AF (TO-39)
  • Package / Case: TO-205AF Metal Can
封裝: TO-205AF Metal Can
庫存6,768
MOSFET (Metal Oxide)
500V
2.5A (Tc)
10V
4V @ 250µA
33nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
1.6 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-205AF (TO-39)
TO-205AF Metal Can
HUFA75309D3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 19A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,080
MOSFET (Metal Oxide)
55V
19A (Tc)
10V
4V @ 250µA
24nC @ 20V
350pF @ 25V
±20V
-
55W (Tc)
70 mOhm @ 19A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
NTB85N03T4G
ON Semiconductor

MOSFET N-CH 28V 85A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 28V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,400
MOSFET (Metal Oxide)
28V
85A (Tc)
4.5V, 10V
3V @ 250µA
29nC @ 4.5V
2150pF @ 24V
±20V
-
80W (Tc)
6.8 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFR210TR
Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存23,484
MOSFET (Metal Oxide)
200V
2.6A (Tc)
10V
4V @ 250µA
8.2nC @ 10V
140pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
1.5 Ohm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRLU024Z
Infineon Technologies

MOSFET N CH 55V 16A SOT 223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 9.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,336
MOSFET (Metal Oxide)
55V
16A (Tc)
4.5V, 10V
3V @ 250µA
9.9nC @ 5V
380pF @ 25V
±16V
-
35W (Tc)
58 mOhm @ 9.6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
TK5A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 5A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.43 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存3,392
MOSFET (Metal Oxide)
600V
5A (Ta)
10V
4.4V @ 1mA
16nC @ 10V
700pF @ 25V
±30V
-
35W (Tc)
1.43 Ohm @ 2.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
DMP4025SFG-7
Diodes Incorporated

MOSFET P-CH 40V 4.65A POWERDI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 4.65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1643pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存4,976
MOSFET (Metal Oxide)
40V
4.65A (Ta)
4.5V, 10V
1.8V @ 250µA
14nC @ 4.5V
1643pF @ 20V
±20V
-
810mW (Ta)
25 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
STL75N8LF6
STMicroelectronics

MOSFET N-CH 80V 75A POWERFLAT56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6895pF @ 25V
  • Vgs (Max): +21V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
封裝: 8-PowerSMD, Flat Leads
庫存3,200
MOSFET (Metal Oxide)
80V
75A (Tc)
5V, 10V
1V @ 250µA
125nC @ 4.5V
6895pF @ 25V
+21V, -16V
-
80W (Tc)
7.4 mOhm @ 9A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
hot RF4E080BNTR
Rohm Semiconductor

MOSFET N-CH 30V 8A 8-HUML

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUML2020L8 (2x2)
  • Package / Case: 8-PowerUDFN
封裝: 8-PowerUDFN
庫存216,000
MOSFET (Metal Oxide)
30V
8A (Ta)
4.5V, 10V
2V @ 250µA
14.5nC @ 10V
660pF @ 15V
±20V
-
2W (Ta)
17.6 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
6-HUML2020L8 (2x2)
8-PowerUDFN
hot STF13N60M2
STMicroelectronics

MOSFET N-CH 600V 11A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存62,112
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
17nC @ 10V
580pF @ 100V
±25V
-
25W (Tc)
380 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot NTA4001NT1G
ON Semiconductor

MOSFET N-CH 20V 0.238A SOT-416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 238mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
封裝: SC-75, SOT-416
庫存8,750,268
MOSFET (Metal Oxide)
20V
238mA (Tj)
2.5V, 4.5V
1.5V @ 100µA
-
20pF @ 5V
±10V
-
300mW (Tj)
3 Ohm @ 10mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
hot IRL2203NPBF
Infineon Technologies

MOSFET N-CH 30V 116A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存62,220
MOSFET (Metal Oxide)
30V
116A (Tc)
4.5V, 10V
1V @ 250µA
60nC @ 4.5V
3290pF @ 25V
±16V
-
180W (Tc)
7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRL540NPBF
Infineon Technologies

MOSFET N-CH 100V 36A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存144,672
MOSFET (Metal Oxide)
100V
36A (Tc)
4V, 10V
2V @ 250µA
74nC @ 5V
1800pF @ 25V
±16V
-
140W (Tc)
44 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot BSC027N04LSGATMA1
Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存156,276
MOSFET (Metal Oxide)
40V
24A (Ta), 100A (Tc)
4.5V, 10V
2V @ 49µA
85nC @ 10V
6800pF @ 20V
±20V
-
2.5W (Ta), 83W (Tc)
2.7 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
hot STP8NK100Z
STMicroelectronics

MOSFET N-CH 1000V 6.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 3.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存95,604
MOSFET (Metal Oxide)
1000V
6.5A (Tc)
10V
4.5V @ 100µA
102nC @ 10V
2180pF @ 25V
±30V
-
160W (Tc)
1.85 Ohm @ 3.15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
MCU20N10-TP
Micro Commercial Co

MOSFET N-CH 100V DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存62,004
MOSFET (Metal Oxide)
100 V
20A
4.5V, 10V
3V @ 250µA
53 nC @ 10 V
2014 pF @ 50 V
±20V
-
47W
48mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
NP82N055NUG-S18-AY
Renesas Electronics Corporation

MOSFET N-CH 55V 82A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 41A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
55 V
82A (Tc)
-
4V @ 250µA
160 nC @ 10 V
9600 pF @ 25 V
±20V
-
1.8W (Ta), 143W (Tc)
6mOhm @ 41A, 10V
175°C
Through Hole
TO-262
TO-262-3 Long Leads, I2PAK, TO-262AA
MSC015SMA070S
Microchip Technology

SICFET N-CH 700V 126A D3PAK

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 126A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V
  • Vgs (Max): +23V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3PAK
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封裝: -
Request a Quote
SiCFET (Silicon Carbide)
700 V
126A (Tc)
20V
2.4V @ 4mA (Typ)
215 nC @ 20 V
4500 pF @ 700 V
+23V, -10V
-
370W (Tc)
19mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
PJD30N15_L2_00001
Panjit International Inc.

150V N-CHANNEL ENHANCEMENT MODE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1764 pF @ 30 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 102W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存8,928
MOSFET (Metal Oxide)
150 V
3.5A (Ta), 25A (Tc)
6V, 10V
4V @ 250µA
29.5 nC @ 10 V
1764 pF @ 30 V
±25V
-
2W (Ta), 102W (Tc)
65mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
NVTFS004N04CTAG
onsemi

MOSFET N-CH 40V 18A/77A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
40 V
18A (Ta), 77A (Tc)
10V
3.5V @ 50µA
18 nC @ 10 V
1150 pF @ 25 V
±20V
-
3.2W (Ta), 55W (Tc)
4.9mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
APT20M20B2FLLG
Microchip Technology

MOSFET N-CH 200V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX™ [B2]
  • Package / Case: TO-247-3 Variant
封裝: -
Request a Quote
MOSFET (Metal Oxide)
200 V
100A (Tc)
-
5V @ 2.5mA
110 nC @ 10 V
6850 pF @ 25 V
-
-
-
20mOhm @ 50A, 10V
-
Through Hole
T-MAX™ [B2]
TO-247-3 Variant
IXTT40N50L2-TRL
IXYS

MOSFET N-CH 500V 40A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
500 V
40A (Tc)
10V
4.5V @ 250µA
320 nC @ 10 V
10400 pF @ 25 V
±20V
-
540W (Tc)
170mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
FDPF035N06B-F152
onsemi

MOSFET N-CH 60V 88A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 46.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
88A (Tc)
-
4V @ 250µA
99 nC @ 10 V
8030 pF @ 30 V
-
-
46.3W (Tc)
3.5mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
SQJ460AEP-T2_GE3
Vishay Siliconix

MOSFET N-CH 60V 58A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2654 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
58A (Tc)
4.5V, 10V
2.5V @ 250µA
106 nC @ 10 V
2654 pF @ 30 V
±20V
-
68W (Tc)
8.7mOhm @ 10.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
IXTA02N250HV-TRL
IXYS

MOSFET N-CH 2500V 200MA TO263HV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 2500 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263HV
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
Request a Quote
MOSFET (Metal Oxide)
2500 V
200mA (Tc)
10V
4.5V @ 250µA
7.4 nC @ 10 V
116 pF @ 25 V
±20V
-
83W (Tc)
450Ohm @ 50mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263HV
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB