頁 492 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  492/1,502
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPI25N06S3-25
Infineon Technologies

MOSFET N-CH 55V 25A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 25.1 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存5,184
MOSFET (Metal Oxide)
55V
25A (Tc)
10V
4V @ 20µA
41nC @ 10V
1862pF @ 25V
±20V
-
48W (Tc)
25.1 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
hot IRF1704
Infineon Technologies

MOSFET N-CH 40V 170A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,992
MOSFET (Metal Oxide)
40V
170A (Tc)
10V
4V @ 250µA
260nC @ 10V
6950pF @ 25V
±20V
-
230W (Tc)
4 mOhm @ 100A, 10V
-55°C ~ 200°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK752R7-60E,127
NXP

MOSFET N-CH 60V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11180pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 349W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,784
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 1mA
158nC @ 10V
11180pF @ 25V
±20V
-
349W (Tc)
2.6 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
RP1E075RPTR
Rohm Semiconductor

MOSFET P-CH 30V 7.5A MPT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MPT6
  • Package / Case: 6-SMD, Flat Leads
封裝: 6-SMD, Flat Leads
庫存3,856
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4V, 10V
2.5V @ 1mA
21nC @ 5V
1900pF @ 10V
±20V
-
2W (Ta)
21 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
MPT6
6-SMD, Flat Leads
AOW480
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 80V 15A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存3,056
MOSFET (Metal Oxide)
80V
15A (Ta), 180A (Tc)
7V, 10V
4V @ 250µA
140nC @ 10V
7820pF @ 40V
±25V
-
1.9W (Ta), 333W (Tc)
4.5 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IPB80N04S2H4ATMA2
Infineon Technologies

MOSFET N-CHANNEL_30/40V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
庫存7,808
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPI70N10S3L12AKSA1
Infineon Technologies

MOSFET N-CH 100V 70A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 83µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 70A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存6,640
MOSFET (Metal Oxide)
100V
70A (Tc)
4.5V, 10V
2.4V @ 83µA
80nC @ 10V
5550pF @ 25V
±20V
-
125W (Tc)
12.1 mOhm @ 70A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2Pak, TO-262AA
SKI03036
Sanken

MOSFET N-CH 30V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 57A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,280
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2.5V @ 650µA
38.8nC @ 10V
2460pF @ 15V
±20V
-
90W (Tc)
3.7 mOhm @ 57A, 10V
150°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN038-100K,518
Nexperia USA Inc.

MOSFET N-CH 100V SOT96-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,336
MOSFET (Metal Oxide)
100V
-
10V
4V @ 1mA
43nC @ 10V
1740pF @ 25V
±20V
-
3.5W (Tc)
38 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BUK9Y43-60E,115
Nexperia USA Inc.

MOSFET N-CH 60V 22A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封裝: SC-100, SOT-669
庫存3,760
MOSFET (Metal Oxide)
60V
22A (Tc)
5V
2.1V @ 1mA
8.2nC @ 5V
880pF @ 25V
±10V
-
45W (Tc)
41 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
FDP12N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存17,808
MOSFET (Metal Oxide)
500V
11.5A (Tc)
10V
5V @ 250µA
30nC @ 10V
1315pF @ 25V
±30V
-
165W (Tc)
650 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IPA50R280CEXKSA2
Infineon Technologies

MOSFET N-CH 500V 7.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 773pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存21,768
MOSFET (Metal Oxide)
500V
7.5A (Tc)
13V
3.5V @ 350µA
32.6nC @ 10V
773pF @ 100V
±20V
-
30.4W (Tc)
280 mOhm @ 4.2A, 13V
-40°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
IPB100N12S305ATMA1
Infineon Technologies

N-CHANNEL_100+

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
封裝: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
庫存5,792
MOSFET (Metal Oxide)
120V
100A (Tc)
10V
4V @ 240µA
185nC @ 10V
11570pF @ 25V
±20V
-
300W (Tc)
5.1 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
STB36NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存4,352
MOSFET (Metal Oxide)
600V
29A (Tc)
10V
5V @ 250µA
80.4nC @ 10V
2785pF @ 50V
±25V
-
190W (Tc)
110 mOhm @ 14.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFH8316TRPBF
Infineon Technologies

MOSFET N-CH 30V 27A PQFN5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3610pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存28,812
MOSFET (Metal Oxide)
30V
27A (Ta), 50A (Tc)
4.5V, 10V
2.2V @ 50µA
59nC @ 10V
3610pF @ 10V
±20V
-
3.6W (Ta), 59W (Tc)
2.95 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
SIHFR430ATRR-GE3
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
500 V
5A (Tc)
10V
4.5V @ 250µA
24 nC @ 10 V
490 pF @ 25 V
±30V
-
110W (Tc)
1.7Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK0213DPA-00-J53
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PJE8404_R1_00001
Panjit International Inc.

30V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Ta)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封裝: -
庫存5,580
MOSFET (Metal Oxide)
30 V
600mA (Ta)
1.8V, 4.5V
1.3V @ 250µA
1.5 nC @ 4.5 V
93 pF @ 15 V
±8V
-
300mW (Ta)
220mOhm @ 600mA, 4,5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
AM2328NE-T1-PF-ML
MOSLEADER

Single N 20V 6.5A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS5C420NWFT1G
onsemi

POWER MOSFET, N-CHANNEL, SO8FL,

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 268A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: -
庫存4,500
MOSFET (Metal Oxide)
40 V
43A (Ta), 268A (Tc)
10V
4V @ 200µA
82 nC @ 10 V
5340 pF @ 20 V
±20V
-
3.8W (Ta), 150W (Tc)
1.1mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NX138AKHH
Nexperia USA Inc.

NX138AKH/SOT8001/DFN0606-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta), 2.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 190mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN0606-3
  • Package / Case: 3-XFDFN
封裝: -
庫存5,772
MOSFET (Metal Oxide)
60 V
260mA (Ta)
2.5V, 10V
1.5V @ 250µA
0.6 nC @ 10 V
15 pF @ 30 V
±20V
-
360mW (Ta), 2.3W (Tc)
4.2Ohm @ 190mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN0606-3
3-XFDFN
IPA65R420CFDXKSA2
Infineon Technologies

MOSFET N-CH 650V 8.7A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 31.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存1,500
MOSFET (Metal Oxide)
650 V
8.7A (Tc)
10V
4.5V @ 300µA
31.5 nC @ 10 V
870 pF @ 100 V
±20V
-
31.2W (Tc)
420mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPB60R280CFD7ATMA1
Infineon Technologies

MOSFET N-CH 600V 9A TO263-3-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存3,000
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
4.5V @ 180µA
18 nC @ 10 V
807 pF @ 400 V
±20V
-
51W (Tc)
280mOhm @ 3.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMFS3D0N08XT1G
onsemi

T10 80V STD NCH MOSFET SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 184µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 133W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: -
Request a Quote
MOSFET (Metal Oxide)
80 V
154A (Tc)
6V, 10V
3.6V @ 184µA
45 nC @ 10 V
3200 pF @ 40 V
±20V
-
133W (Tc)
2.6mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
PJQ5443-AU_R2_000A1
Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2767 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
封裝: -
庫存23,760
MOSFET (Metal Oxide)
40 V
9A (Ta), 50A (Tc)
4.5V, 10V
2.5V @ 250µA
23 nC @ 4.5 V
2767 pF @ 25 V
±20V
-
2W (Ta), 63W (Tc)
12mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
XP202A0003MR-G
Torex Semiconductor Ltd

MOSFET P-CH 30V 3A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存300
MOSFET (Metal Oxide)
30 V
5A (Tj)
4V, 10V
2.6V @ 1mA
10 nC @ 10 V
435 pF @ 10 V
±20V
-
1W
45mOhm @ 1.5A, 10V
150°C
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
R6515KNZC8
Rohm Semiconductor

MOSFET N-CH 650V 15A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 315mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
封裝: -
Request a Quote
MOSFET (Metal Oxide)
650 V
15A (Tc)
10V
5V @ 430µA
27.5 nC @ 10 V
1050 pF @ 25 V
±20V
-
60W (Tc)
315mOhm @ 6.5A, 10V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
NTMFS3D5N08XT1G
onsemi

T10 80V STD NCH MOSFET SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 153µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2680 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 31A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: -
Request a Quote
MOSFET (Metal Oxide)
80 V
135A (Tc)
6V, 10V
3.6V @ 153µA
38 nC @ 10 V
2680 pF @ 40 V
±20V
-
119W (Tc)
3mOhm @ 31A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads