頁 463 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  463/1,502
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庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUIRFR48Z
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,096
MOSFET (Metal Oxide)
55V
42A (Tc)
10V
4V @ 50µA
60nC @ 10V
1720pF @ 25V
±20V
-
91W (Tc)
11 mOhm @ 37A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF7805APBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存286,140
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V
3V @ 250µA
31nC @ 5V
-
±12V
-
2.5W (Ta)
11 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRL3502PBF
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存7,328
MOSFET (Metal Oxide)
20V
110A (Tc)
4.5V, 7V
700mV @ 250µA
110nC @ 4.5V
4700pF @ 15V
±10V
-
140W (Tc)
7 mOhm @ 64A, 7V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFR5410TRL
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,320
MOSFET (Metal Oxide)
100V
13A (Tc)
10V
4V @ 250µA
58nC @ 10V
760pF @ 25V
±20V
-
66W (Tc)
205 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQD4N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存120,012
MOSFET (Metal Oxide)
200V
3A (Tc)
10V
5V @ 250µA
6.5nC @ 10V
220pF @ 25V
±30V
-
2.5W (Ta), 30W (Tc)
1.4 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FQP2P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 2.3A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存163,200
MOSFET (Metal Oxide)
250V
2.3A (Tc)
10V
5V @ 250µA
8.5nC @ 10V
250pF @ 25V
±30V
-
52W (Tc)
4 Ohm @ 1.15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
BUK9520-55A,127
NXP

MOSFET N-CH 55V 54A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 118W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存4,928
MOSFET (Metal Oxide)
55V
54A (Tc)
4.5V, 10V
2V @ 1mA
-
2210pF @ 25V
±10V
-
118W (Tc)
18 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
APT41M80L
Microsemi Corporation

MOSFET N-CH 800V 43A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
封裝: TO-264-3, TO-264AA
庫存6,576
MOSFET (Metal Oxide)
800V
43A (Tc)
10V
5V @ 2.5mA
260nC @ 10V
8070pF @ 25V
±30V
-
1040W (Tc)
210 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
IXTY3N50P
IXYS

MOSFET N-CH 500V 3.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,520
MOSFET (Metal Oxide)
500V
3.6A (Tc)
10V
5.5V @ 50µA
9.3nC @ 10V
409pF @ 25V
±30V
-
70W (Tc)
2 Ohm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AOD4454
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 3A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存256,416
MOSFET (Metal Oxide)
150V
3A (Ta), 20A (Tc)
7V, 10V
4.6V @ 250µA
20nC @ 10V
985pF @ 75V
±20V
-
2.5W (Ta), 100W (Tc)
94 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SUM50020EL-GE3
Vishay Siliconix

MOSFET N-CH 60V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,536
MOSFET (Metal Oxide)
60V
120A (Tc)
4.5V, 10V
2.5V @ 250µA
126nC @ 10V
11113pF @ 30V
±20V
-
375W (Tc)
2.1 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2Pak)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD86540
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 21.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,336
MOSFET (Metal Oxide)
60V
21.5A (Ta), 50A (Tc)
8V, 10V
4V @ 250µA
90nC @ 10V
6340pF @ 30V
±20V
-
3.1W (Ta), 127W (Tc)
4.1 mOhm @ 21.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STI24NM60N
STMicroelectronics

MOSFET N CH 600V 17A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存6,448
MOSFET (Metal Oxide)
600V
17A (Tc)
10V
4V @ 250µA
46nC @ 10V
1400pF @ 50V
±30V
-
125W (Tc)
190 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
TPH8R903NL,LQ
Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存29,610
MOSFET (Metal Oxide)
30V
20A (Tc)
10V
2.3V @ 1mA
9.8nC @ 10V
820pF @ 15V
±20V
-
1.6W (Ta), 24W (Tc)
8.9 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
hot NTTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 8A 8-WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存113,640
MOSFET (Metal Oxide)
60V
8A (Ta)
4.5V, 10V
3V @ 250µA
25nC @ 10V
850pF @ 25V
±20V
-
3.1W (Ta), 19W (Tc)
24 mOhm @ 7.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
RFG75N05E
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
50 V
75A (Tc)
10V
4V @ 250µA
400 nC @ 20 V
-
±20V
-
240W (Tc)
8mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
PJT7413_S2_00001
Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363
封裝: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.5A (Ta)
1.5V, 4.5V
1.2V @ 250µA
7 nC @ 4.5 V
522 pF @ 10 V
±12V
-
750mW (Ta)
85mOhm @ 2.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-363
6-TSSOP, SC-88, SOT-363
AOT66916L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 35.5/120A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta), 277W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: -
庫存5,034
MOSFET (Metal Oxide)
100 V
35.5A (Ta), 120A (Tc)
6V, 10V
3.5V @ 250µA
78 nC @ 10 V
6180 pF @ 50 V
±20V
-
8.3W (Ta), 277W (Tc)
3.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
CPH3325-TL-E
onsemi

PCH 4V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ISZ520N20NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 4.5V @ 31µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-34
  • Package / Case: 8-PowerVDFN
封裝: -
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MOSFET (Metal Oxide)
200 V
4.5A (Ta), 26A (Tc)
10V, 15V
4.5V @ 31µA
14.9 nC @ 10 V
960 pF @ 100 V
±20V
-
2.5W (Ta), 88W (Tc)
47.8mOhm @ 15A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8-34
8-PowerVDFN
NTBL045N065SC1
onsemi

SILICON CARBIDE (SIC) MOSFET - 3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
  • Vgs (Max): +22.6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HPSOF
  • Package / Case: 8-PowerSFN
封裝: -
庫存5,613
SiCFET (Silicon Carbide)
650 V
73A (Tc)
15V, 18V
4.3V @ 8mA
105 nC @ 18 V
1870 pF @ 325 V
+22.6V, -8V
-
348W (Tc)
50mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
8-HPSOF
8-PowerSFN
TSM80N1R2CI
Taiwan Semiconductor Corporation

800V, 5.5A, SINGLE N-CHANNEL POW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封裝: -
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MOSFET (Metal Oxide)
800 V
5.5A (Tc)
10V
4V @ 250µA
19.4 nC @ 10 V
685 pF @ 100 V
±30V
-
25W (Tc)
1.2Ohm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220
TO-220-3 Full Pack, Isolated Tab
IGT60R042D1ATMA1
Infineon Technologies

GAN HV

  • FET Type: -
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-3
  • Package / Case: 8-PowerSFN
封裝: -
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GaNFET (Gallium Nitride)
600 V
-
-
-
-
-
-
-
-
-
-
Surface Mount
PG-HSOF-8-3
8-PowerSFN
R6022YNXC7G
Rohm Semiconductor

NCH 600V 13A, TO-220FM, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
  • Vgs(th) (Max) @ Id: 6V @ 1.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存3,000
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V, 12V
6V @ 1.8mA
33 nC @ 10 V
1400 pF @ 100 V
±30V
-
65W (Tc)
165mOhm @ 6.5A, 12V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
STD18N60M6
STMicroelectronics

MOSFET N-CH 600V 13A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存4,911
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
4.75V @ 250µA
16.8 nC @ 10 V
650 pF @ 100 V
±25V
-
110W (Tc)
280mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ5444-AU_R2_000A1
Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN5060-8
  • Package / Case: 8-PowerVDFN
封裝: -
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MOSFET (Metal Oxide)
40 V
12.7A (Ta), 70A (Tc)
4.5V, 10V
2.5V @ 250µA
17 nC @ 4.5 V
1759 pF @ 25 V
±20V
-
2.4W (Ta), 100W (Tc)
6.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DFN5060-8
8-PowerVDFN
HUF76143P3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封裝: -
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MOSFET (Metal Oxide)
30 V
75A (Tc)
4.5V, 10V
3V @ 250µA
114 nC @ 10 V
3900 pF @ 25 V
±20V
-
225W (Tc)
5.5mOhm @ 75A, 10V
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
SQJQ184ER-T1_GE3
Vishay Siliconix

AUTOMOTIVE N-CHANNEL 80 V (D-S)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16009 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerSMD, Gull Wing
封裝: -
庫存1,674
MOSFET (Metal Oxide)
80 V
430A (Tc)
10V
3.5V @ 250µA
240 nC @ 10 V
16009 pF @ 25 V
±20V
-
600W (Tc)
1.4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerSMD, Gull Wing