頁 460 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  460/1,502
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRLH5036TRPBF
Infineon Technologies

MOSFET N-CH 60V 100A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
封裝: 8-PowerVDFN
庫存36,000
MOSFET (Metal Oxide)
60V
20A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 150µA
90nC @ 10V
5360pF @ 25V
±16V
-
3.6W (Ta), 160W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PQFN (5x6)
8-PowerVDFN
IRF6728MTRPBF
Infineon Technologies

MOSFET N-CH 30V 23A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4110pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 23A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封裝: DirectFET? Isometric MX
庫存5,824
MOSFET (Metal Oxide)
30V
23A (Ta), 140A (Tc)
4.5V, 10V
2.35V @ 100µA
42nC @ 4.5V
4110pF @ 15V
±20V
-
2.1W (Ta), 75W (Tc)
2.5 mOhm @ 23A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? MX
DirectFET? Isometric MX
NP80N04PUG-E1B-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,296
MOSFET (Metal Oxide)
40V
80A (Tc)
10V
4V @ 250µA
135nC @ 10V
7350pF @ 25V
±20V
-
1.8W (Ta), 115W (Tc)
4.5 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot SUD25N04-25-T4-E3
Vishay Siliconix

MOSFET N-CH 40V 25A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存60,012
MOSFET (Metal Oxide)
40V
25A (Tc)
4.5V, 10V
3V @ 250µA
20nC @ 10V
510pF @ 25V
±20V
-
3W (Ta), 33W (Tc)
25 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTA4153NT1
ON Semiconductor

MOSFET N-CH 20V 915MA SOT-416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.82nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 16V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 300mW (Tj)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
封裝: SC-75, SOT-416
庫存32,844
MOSFET (Metal Oxide)
20V
915mA (Ta)
1.5V, 4.5V
1.1V @ 250µA
1.82nC @ 4.5V
110pF @ 16V
±6V
-
300mW (Tj)
230 mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
AUIRF1324
Infineon Technologies

MOSFET N-CH 24V 195A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存3,984
MOSFET (Metal Oxide)
24V
195A (Tc)
10V
4V @ 250µA
240nC @ 10V
7590pF @ 24V
±20V
-
300W (Tc)
1.5 mOhm @ 195A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AUIRFR3504TRL
Infineon Technologies

MOSFET N-CH 40V 87A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,360
MOSFET (Metal Oxide)
40V
56A (Tc)
10V
4V @ 250µA
71nC @ 10V
2150pF @ 25V
±20V
-
140W (Tc)
9.2 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
AOW12N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存3,152
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
4.5V @ 250µA
48nC @ 10V
2150pF @ 25V
±30V
-
278W (Tc)
720 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
NVTFS4C25NTAG
ON Semiconductor

MOSFET N-CH 30V 27A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.1A (Ta), 22.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 14.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存6,016
MOSFET (Metal Oxide)
30V
10.1A (Ta), 22.1A (Tc)
4.5V, 10V
2.2V @ 250µA
10.3nC @ 10V
500pF @ 15V
±20V
-
3W (Ta), 14.3W (Tc)
17 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot SI7846DP-T1-E3
Vishay Siliconix

MOSFET N-CH 150V 4A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封裝: PowerPAK? SO-8
庫存1,034,988
MOSFET (Metal Oxide)
150V
4A (Ta)
10V
4.5V @ 250µA
36nC @ 10V
-
±20V
-
1.9W (Ta)
50 mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
IXFP36N30P3
IXYS

MOSFET N-CH 300V 36A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 347W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存7,984
MOSFET (Metal Oxide)
300V
36A (Tc)
10V
4.5V @ 250µA
30nC @ 10V
2040pF @ 25V
±20V
-
347W (Tc)
110 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRLS3813TRLPBF
Infineon Technologies

MOSFET N-CH 30V 160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 83nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 148A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存20,340
MOSFET (Metal Oxide)
30V
160A (Tc)
10V
2.35V @ 150µA
83nC @ 4.5V
8020pF @ 25V
±20V
-
195W (Tc)
1.95 mOhm @ 148A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTD4302T4G
ON Semiconductor

MOSFET N-CH 30V 8.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存1,207,980
MOSFET (Metal Oxide)
30V
8.4A (Ta), 68A (Tc)
4.5V, 10V
3V @ 250µA
80nC @ 10V
2400pF @ 24V
±20V
-
1.04W (Ta), 75W (Tc)
10 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
IPP65R310CFDXKSA1
Infineon Technologies

MOSFET N-CH 650V 11.4A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
650 V
11.4A (Tc)
10V
4.5V @ 440µA
41 nC @ 10 V
1100 pF @ 100 V
±20V
-
104.2W (Tc)
310mOhm @ 4.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IRFBE20PBF-BE3
Vishay Siliconix

MOSFET N-CH 800V 1.8A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
800 V
1.8A (Tc)
-
4V @ 250µA
38 nC @ 10 V
530 pF @ 25 V
±20V
-
54W (Tc)
6.5Ohm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
FDU6644
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3087 pF @ 15 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Stub Leads, IPAK
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
67A (Ta)
4.5V, 10V
3V @ 250µA
35 nC @ 5 V
3087 pF @ 15 V
±16V
-
1.6W (Ta)
8.5mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
AOK033V120X2Q
Alpha & Omega Semiconductor Inc.

1200V SILICON CARBIDE MOSFET

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
  • Vgs (Max): +15V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
68A (Tc)
15V
2.8V @ 17.5mA
104 nC @ 15 V
2908 pF @ 800 V
+15V, -5V
-
300W (Ta)
43mOhm @ 20A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
LSIC1MO120T0080-TU
IXYS

1200V/80MOHM SIC MOSFET TO-263-7

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封裝: -
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SiC (Silicon Carbide Junction Transistor)
1200 V
39A (Tc)
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPZA60R080P7XKSA1
Infineon Technologies

MOSFET N-CH 600V 37A TO247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 129W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4
  • Package / Case: TO-247-4
封裝: -
庫存9
MOSFET (Metal Oxide)
600 V
37A (Tc)
10V
4V @ 590µA
51 nC @ 10 V
2180 pF @ 400 V
±20V
-
129W (Tc)
80mOhm @ 11.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-4
TO-247-4
DMP3056LDMQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封裝: -
庫存9,000
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
2.1V @ 250µA
21.1 nC @ 10 V
948 pF @ 25 V
±20V
-
1.25W (Ta)
45mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
TSM2NB60CH
Taiwan Semiconductor Corporation

600V, 2A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 44W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
封裝: -
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MOSFET (Metal Oxide)
600 V
2A (Tc)
10V
4.5V @ 250µA
9.4 nC @ 10 V
249 pF @ 25 V
±30V
-
44W (Tc)
4.4Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
DMTH4004LPSQ-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 69.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.83W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封裝: -
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MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
3V @ 250µA
69.6 nC @ 10 V
5220 pF @ 20 V
±20V
-
2.83W (Ta), 125W (Tc)
2.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
SSM3J372R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -30V -6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
  • Vgs (Max): +6V, -12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
封裝: -
庫存30,726
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
560 pF @ 15 V
+6V, -12V
-
1W (Ta)
42mOhm @ 5A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
NP90N04VDG-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 40V 90A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
40 V
90A (Tc)
-
2.5V @ 250µA
135 nC @ 10 V
6900 pF @ 25 V
-
-
1.2W (Ta), 105W (Tc)
4mOhm @ 45A, 10V
175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTNS3CS68NZT5G
onsemi

4.3A, 20V, 0.06OHM, 2-ELEMENT, N

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SSM3K16CTC-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 200MA CST3C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
封裝: -
庫存55,089
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.5V, 4.5V
1V @ 1mA
-
12 pF @ 10 V
±10V
-
500mW (Ta)
2.2Ohm @ 100mA, 4.5V
150°C
Surface Mount
CST3C
SC-101, SOT-883
DMN3020UFDFQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
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MOSFET (Metal Oxide)
30 V
10.4A (Ta), 15A (Tc)
1.5V, 4.5V
1V @ 250µA
27 nC @ 8 V
1304 pF @ 15 V
±12V
-
730mW (Ta)
19mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
STB22N60M6
STMicroelectronics

MOSFET N-CH 600V 15A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存321
MOSFET (Metal Oxide)
600 V
15A (Tc)
10V
4.75V @ 250µA
20 nC @ 10 V
800 pF @ 100 V
±25V
-
130W (Tc)
230mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB