頁 434 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品

BSS159NL6327HTSA1

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 44pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,152

MOSFET (Metal Oxide)

60V

230mA (Ta)

0V, 10V

2.4V @ 26µA

2.9nC @ 5V

44pF @ 25V

±20V

Depletion Mode

360mW (Ta)

3.5 Ohm @ 160mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3

TO-236-3, SC-59, SOT-23-3

JANTXV2N7228U

Microsemi Corporation

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-267AB
Package / Case: TO-267AB

封裝: TO-267AB

庫存2,368

MOSFET (Metal Oxide)

500V

12A (Tc)

10V

4V @ 250µA

120nC @ 10V

-

±20V

-

4W (Ta), 150W (Tc)

515 mOhm @ 12A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-267AB

SI7621DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4A 1212-8 PPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封裝: PowerPAK? 1212-8

庫存72,372

MOSFET (Metal Oxide)

20V

4A (Tc)

2.5V, 4.5V

2V @ 250µA

6.2nC @ 5V

300pF @ 10V

±12V

-

3.1W (Ta), 12.5W (Tc)

90 mOhm @ 3.9A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

IXCP01N90E

IXYS

MOSFET N-CH 900V 0.25A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 133pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存5,536

MOSFET (Metal Oxide)

900V

250mA (Tc)

10V

5V @ 25µA

7.5nC @ 10V

133pF @ 25V

±20V

-

40W (Tc)

80 Ohm @ 50mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

NTB75N06L

ON Semiconductor

MOSFET N-CH 60V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 4370pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,792

MOSFET (Metal Oxide)

60V

75A (Ta)

5V

2V @ 250µA

92nC @ 5V

4370pF @ 25V

±20V

-

2.4W (Ta), 214W (Tj)

11 mOhm @ 37.5A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSS123LT3

ON Semiconductor

MOSFET N-CH 100V 170MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存7,312

MOSFET (Metal Oxide)

100V

170mA (Ta)

10V

2.8V @ 1mA

-

20pF @ 25V

±20V

-

225mW (Ta)

6 Ohm @ 100mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

FQD12N20TF

Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,552

MOSFET (Metal Oxide)

200V

9A (Tc)

10V

5V @ 250µA

23nC @ 10V

910pF @ 25V

±30V

-

2.5W (Ta), 55W (Tc)

280 mOhm @ 4.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

STQ3NK50ZR-AP

STMicroelectronics

MOSFET N-CH 500V 500MA TO-92

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,136

MOSFET (Metal Oxide)

500V

500mA (Tc)

10V

4.5V @ 50µA

15nC @ 10V

280pF @ 25V

±30V

-

3W (Tc)

3.3 Ohm @ 1.15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

IPI70R950CEXKSA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存6,752

-

IXFT16N90Q

IXYS

MOSFET N-CH 900V 16A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 650 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

庫存4,928

MOSFET (Metal Oxide)

900V

16A (Tc)

10V

5V @ 4mA

170nC @ 10V

4000pF @ 25V

±20V

-

360W (Tc)

650 mOhm @ 8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-268

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TK8A60W,S4VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 8A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: TO-220-3 Full Pack, Isolated Tab

庫存2,992

MOSFET (Metal Oxide)

600V

8A (Ta)

10V

3.7V @ 400µA

18.5nC @ 10V

570pF @ 300V

±30V

Super Junction

30W (Tc)

500 mOhm @ 4A, 10V

150°C (TJ)

Through Hole

TO-220SIS

TO-220-3 Full Pack, Isolated Tab

STP9N80K5

STMicroelectronics

MOSFET N-CH 800V 7A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封裝: TO-220-3

庫存3,248

MOSFET (Metal Oxide)

800V

7A (Tc)

10V

5V @ 100µA

12nC @ 10V

340pF @ 100V

±30V

-

110W (Tc)

900 mOhm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

STP75NS04Z

STMicroelectronics

MOSFET N-CH 33V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 33V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存393,744

MOSFET (Metal Oxide)

33V

80A (Tc)

10V

4V @ 250µA

50nC @ 10V

1860pF @ 25V

-

110W (Tc)

11 mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDMC7680

Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2855pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 14.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-MLP (3.3x3.3)
Package / Case: 8-PowerWDFN

封裝: 8-PowerWDFN

庫存37,260

MOSFET (Metal Oxide)

30V

14.8A (Ta)

4.5V, 10V

3V @ 250µA

42nC @ 10V

2855pF @ 15V

±20V

-

2.3W (Ta), 31W (Tc)

7.2 mOhm @ 14.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-MLP (3.3x3.3)

8-PowerWDFN

RE1C001UNTCL

Rohm Semiconductor

MOSFET N-CH 20V 0.1A EMT3FM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7.1pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: EMT3F (SOT-416FL)
Package / Case: SC-89, SOT-490

封裝: SC-89, SOT-490

庫存5,632

MOSFET (Metal Oxide)

20V

100mA (Ta)

1.2V, 4.5V

1V @ 100µA

-

7.1pF @ 10V

±8V

-

150mW (Ta)

3.5 Ohm @ 100mA, 4.5V

150°C (TJ)

Surface Mount

EMT3F (SOT-416FL)

SC-89, SOT-490

PSMN8R7-80PS,127

Nexperia USA Inc.

MOSFET N-CH 80V TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3346pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存33,804

MOSFET (Metal Oxide)

80V

90A (Tc)

10V

4V @ 1mA

52nC @ 10V

3346pF @ 40V

±20V

-

170W (Tc)

8.7 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRL2910PBF

Infineon Technologies

MOSFET N-CH 100V 55A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封裝: TO-220-3

庫存13,644

MOSFET (Metal Oxide)

100V

55A (Tc)

4V, 10V

2V @ 250µA

140nC @ 5V

3700pF @ 25V

±16V

-

200W (Tc)

26 mOhm @ 29A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

2SK2530-TL-E

Sanyo

MOSFET N-CH 250V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

GPI90005DF88

GaNPower

GaNFET N-CH 900V 5A DFN8x8

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 5A
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 400 V
Vgs (Max): +7.5V, -12V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (8x8)
Package / Case: 8-DFN

封裝: -

Request a Quote

GaNFET (Gallium Nitride)

900 V

5A

6V

1.3V @ 3.5mA

1.6 nC @ 6 V

39 pF @ 400 V

+7.5V, -12V

-

320mOhm @ 1A, 6V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (8x8)

8-DFN

SCH1402-S-TL-E-SY

Sanyo

MOSFET N-CH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

APT50M50JVFR

Microchip Technology

MOSFET N-CH 500V 77A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 1000 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19600 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封裝: -

庫存24

MOSFET (Metal Oxide)

500 V

77A (Tc)

-

4V @ 5mA

1000 nC @ 10 V

19600 pF @ 25 V

-

50mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

PMCM950ENEZ

Nexperia USA Inc.

MOSFET N-CH 60V 4.8A 9WLCSP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 780mW (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 9-WLCSP (1.48x1.48)
Package / Case: 9-XFBGA, WLCSP

封裝: -

庫存12,873

MOSFET (Metal Oxide)

60 V

4.8A (Ta)

4.5V, 10V

1.5V @ 250µA

45 nC @ 10 V

1160 pF @ 30 V

±20V

-

780mW (Ta), 12.5W (Tc)

41mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

9-WLCSP (1.48x1.48)

9-XFBGA, WLCSP

AON6362FD

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 27A/60A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerSMD, Flat Leads

封裝: -

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MOSFET (Metal Oxide)

30 V

27A (Ta), 60A (Tc)

-

2.2V @ 250µA

13 nC @ 10 V

820 pF @ 15 V

±20V

-

6.2W (Ta), 31W (Tc)

5.2mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerSMD, Flat Leads

SCT4062KW7HRTL

Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 93W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7L
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -

庫存2,940

SiCFET (Silicon Carbide)

1200 V

24A (Tc)

18V

4.8V @ 6.45mA

64 nC @ 18 V

1498 pF @ 800 V

+21V, -4V

-

93W

81mOhm @ 12A, 18V

175°C (TJ)

Surface Mount

TO-263-7L

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

CMS23N06H8-HF

Comchip Technology

MOSFET N-CH 60V 23A/125A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3467 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN

封裝: -

庫存15,000

MOSFET (Metal Oxide)

60 V

23A (Ta), 125A (Tc)

4.5V, 10V

2.5V @ 250µA

64 nC @ 10 V

3467 pF @ 25 V

±20V

-

86W (Tc)

3.1mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (5x6)

8-PowerVDFN

G050P03K

Goford Semiconductor

P-30V,-85A,RD(MAX)<4.5M@-10V,VTH

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7051 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存5,913

MOSFET (Metal Oxide)

30 V

85A (Tc)

4.5V, 10V

2.5V @ 250µA

111 nC @ 10 V

7051 pF @ 15 V

±20V

-

100W (Tc)

4.5mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPAK (2 Leads + Tab), SC-63

TPCP8J01-TE85L-F-M

Toshiba Semiconductor and Storage

MOSFET P-CH 32V 5.5A PS-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 32 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.14W (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8
Package / Case: 8-SMD, Flat Lead

封裝: -

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MOSFET (Metal Oxide)

32 V

5.5A (Ta)

4V, 10V

2V @ 1mA

34 nC @ 10 V

1760 pF @ 10 V

±20V

-

2.14W (Ta)

35mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

PS-8

8-SMD, Flat Lead

2SK2480-AZ

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-