頁 433 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  433/1,502
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庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPP07N60CFDHKSA1
Infineon Technologies

MOSFET N-CH 650V 6.6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,616
MOSFET (Metal Oxide)
650V
6.6A (Tc)
10V
5V @ 300µA
47nC @ 10V
790pF @ 25V
±20V
-
83W (Tc)
700 mOhm @ 4.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IRF7471PBF
Infineon Technologies

MOSFET N-CH 40V 10A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存7,488
MOSFET (Metal Oxide)
40V
10A (Ta)
4.5V, 10V
3V @ 250µA
32nC @ 4.5V
2820pF @ 20V
±20V
-
2.5W (Ta)
13 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRFR9N20DTR
Infineon Technologies

MOSFET N-CH 200V 9.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,832
MOSFET (Metal Oxide)
200V
9.4A (Tc)
10V
5.5V @ 250µA
27nC @ 10V
560pF @ 25V
±30V
-
86W (Tc)
380 mOhm @ 5.6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4863NA-1G
ON Semiconductor

MOSFET N-CH 25V 9.2A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存6,304
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
-
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
-
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot FDN336P-NL
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.3A SSOT-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存570,216
MOSFET (Metal Oxide)
20V
1.3A (Ta)
2.5V, 4.5V
1.5V @ 250µA
5nC @ 4.5V
330pF @ 10V
±8V
-
500mW (Ta)
200 mOhm @ 1.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
hot RFD3055LESM
Fairchild/ON Semiconductor

MOSFET N-CH 60V 11A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 107 mOhm @ 8A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存630,132
MOSFET (Metal Oxide)
60V
11A (Tc)
5V
3V @ 250µA
11.3nC @ 10V
350pF @ 25V
±16V
-
38W (Tc)
107 mOhm @ 8A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IXFK24N80P
IXYS

MOSFET N-CH 800V 24A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 650W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
封裝: TO-264-3, TO-264AA
庫存82,800
MOSFET (Metal Oxide)
800V
24A (Tc)
10V
5V @ 4mA
105nC @ 10V
7200pF @ 25V
±30V
-
650W (Tc)
400 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXFT340N075T2
IXYS

MOSFET N-CH 75V 340A TO268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 935W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
庫存4,032
MOSFET (Metal Oxide)
75V
340A (Tc)
10V
4V @ 3mA
300nC @ 10V
19000pF @ 25V
-
-
935W (Tc)
3.2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
hot AOT2918L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 90A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存10,884
MOSFET (Metal Oxide)
100V
13A (Ta), 90A (Tc)
10V
3.9V @ 250µA
53nC @ 10V
3430pF @ 50V
±20V
-
2.1W (Ta), 267W (Tc)
7 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STW26N60M2
STMicroelectronics

MOSFET N-CH 600V 20A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 169W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存4,288
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 250µA
34nC @ 10V
1360pF @ 100V
±25V
-
169W (Tc)
165 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
NVTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 20A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存5,680
MOSFET (Metal Oxide)
60V
7.6A (Ta)
4.5V, 10V
2.5V @ 250µA
16nC @ 10V
850pF @ 25V
±20V
-
3.2W (Ta), 22W (Tc)
24 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot IRF9620STRLPBF
Vishay Siliconix

MOSFET P-CH 200V 3.5A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存19,200
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
4V @ 250µA
22nC @ 10V
350pF @ 25V
±20V
-
3W (Ta), 40W (Tc)
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFL4315TRPBF
Infineon Technologies

MOSFET N-CH 150V 2.6A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存6,912
MOSFET (Metal Oxide)
150V
2.6A (Ta)
10V
5V @ 250µA
19nC @ 10V
420pF @ 25V
±30V
-
2.8W (Ta)
185 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SIHD14N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 13A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1205pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存24,354
MOSFET (Metal Oxide)
600V
13A (Tc)
10V
4V @ 250µA
64nC @ 10V
1205pF @ 100V
±30V
-
147W (Tc)
309 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFS3206TRRPBF
Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存13,560
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4V @ 150µA
170nC @ 10V
6540pF @ 50V
±20V
-
300W (Tc)
3 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF644SPBF
Vishay Siliconix

MOSFET N-CH 250V 14A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存197,868
MOSFET (Metal Oxide)
250V
14A (Tc)
10V
4V @ 250µA
68nC @ 10V
1300pF @ 25V
±20V
-
3.1W (Ta), 125W (Tc)
280 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFBF20PBF
Vishay Siliconix

MOSFET N-CH 900V 1.7A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存15,870
MOSFET (Metal Oxide)
900V
1.7A (Tc)
10V
4V @ 250µA
38nC @ 10V
490pF @ 25V
±20V
-
54W (Tc)
8 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NP75N04VDK-E1-AY
Renesas Electronics Corporation

POWER TRS2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 38A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (MP-3ZP)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
庫存22,416
MOSFET (Metal Oxide)
40 V
75A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
2450 pF @ 25 V
±20V
-
1.2W (Ta), 75W (Tc)
5.7mOhm @ 38A, 10V
175°C
Surface Mount
TO-252 (MP-3ZP)
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPN80R750P7ATMA1
Infineon Technologies

MOSFET N-CH 800V 7A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
封裝: -
Request a Quote
MOSFET (Metal Oxide)
800 V
7A (Tc)
10V
3.5V @ 140µA
17 nC @ 10 V
460 pF @ 500 V
±20V
-
7.2W (Tc)
750mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
SI2312BDS-T1-BE3
Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存26,442
MOSFET (Metal Oxide)
20 V
3.9A (Ta)
1.8V, 4.5V
850mV @ 250µA
12 nC @ 4.5 V
-
±8V
-
750mW (Ta)
31mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NTMFS024N06CT1G
onsemi

MOSFET N-CH 60V 8A/25A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封裝: -
Request a Quote
MOSFET (Metal Oxide)
60 V
8A (Ta), 25A (Tc)
10V
4V @ 20µA
5.7 nC @ 10 V
333 pF @ 30 V
±20V
-
3.4W (Ta), 28W (Tc)
22mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
DI050N04PT
Diotec Semiconductor

IC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-QFN (3x3)
  • Package / Case: 8-PowerVDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
59 nC @ 10 V
3300 pF @ 25 V
±20V
-
30W (Tc)
6.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-QFN (3x3)
8-PowerVDFN
IRF541
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
80 V
28A (Tc)
10V
4V @ 250µA
59 nC @ 10 V
1450 pF @ 25 V
±20V
-
150W (Tc)
77mOhm @ 17A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SSF3365
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -3A, -30V,

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
庫存17,220
MOSFET (Metal Oxide)
30 V
3A (Ta)
4.5V, 10V
1V @ 250µA
10 nC @ 10 V
600 pF @ 15 V
±20V
-
1.25W (Ta)
80mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SI8810-TP
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 300mW
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
20 V
7A
1.8V, 10V
1V @ 250µA
15 nC @ 10 V
890 pF @ 10 V
±12V
-
300mW
20mOhm @ 7A, 10V
-55°C ~ 150°C
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
FDMA037N08LC
onsemi

MOSFET N-CH 80V 6A 6WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 36.5mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
封裝: -
庫存44,064
MOSFET (Metal Oxide)
80 V
6A (Tc)
4.5V, 10V
2.5V @ 20µA
9 nC @ 10 V
595 pF @ 40 V
±20V
-
2.4W (Ta)
36.5mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
RJK6013DPP-00-T2
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SPD04N50C3T
Infineon Technologies

MOSFET N-CH 560V 4.5A DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-