電晶體 - FET、MOSFET - 單

SPB80N04S2-H4

Infineon Technologies

MOSFET N-CH 40V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI25N06S3L-22

Infineon Technologies

MOSFET N-CH 55V 25A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 21.6 mOhm @ 17A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

BSP135 E6327

Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

WPB4001-1E

ON Semiconductor

MOSFET N-CH 500V 26A TO3P3L

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
• Rds On (Max) @ Id, Vgs: 260 mOhm @ 13A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P-3L
• Package / Case: TO-3P-3, SC-65-3

封裝: TO-3P-3, SC-65-3

NTDV18N06LT4G

ON Semiconductor

MOSFET N-CH 60V 18A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 55W (Tj)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

TPCA8021-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 27A SOP-8 ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

AOL1418

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A 8ULTRASO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.08W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UltraSO-8?
• Package / Case: 3-PowerSMD, Flat Leads

封裝: 3-PowerSMD, Flat Leads

FQB5N50CFTM

Fairchild/ON Semiconductor

MOSFET N-CH 500V 5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQD630TM

Fairchild/ON Semiconductor

MOSFET N-CH 200V 7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

STK822

STMicroelectronics

MOSFET N-CH 25V 38A POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6060pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta)
• Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PolarPak?
• Package / Case: PolarPak?

封裝: PolarPak?

IXTT10P60

IXYS

MOSFET P-CH 600V 10A TO-268

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

NTMFS4834NT1G

ON Semiconductor

MOSFET N-CH 30V 13A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封裝: 8-PowerTDFN, 5 Leads

BUK7Y15-60EX

Nexperia USA Inc.

MOSFET N-CH 60V 53A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1838pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

封裝: SC-100, SOT-669

DMN3023L-13

Diodes Incorporated

MOSFET N-CH 30V 6.2A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 155°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TSM210N06CZ C0G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封裝: TO-220-3

TSM060N03ECP ROG

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

FDB38N30U

Fairchild/ON Semiconductor

MOSFET N CH 300V 38A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 313W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RW1C026ZPT2CR

Rohm Semiconductor

MOSFET P-CH 20V 2.5A WEMT6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WEMT
• Package / Case: SOT-563, SOT-666

封裝: SOT-563, SOT-666

BUK7212-55B,118

Nexperia USA Inc.

MOSFET N-CH 55V 75A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2453pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

SIHB24N65E-E3

Vishay Siliconix

MOSFET N-CH 650V 24A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

CSD16403Q5A

Texas Instruments

MOSFET N-CH 25V 100A 8-SON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V
• Vgs (Max): +16V, -12V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (5x6)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

PJA3415A-AU_R1_000A1

Panjit International Inc.

SOT-23, MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

NVMFS6H836NT1G

onsemi

MOSFET N-CH 80V 15A/74A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 95µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封裝: -

Request a Quote

PJA3430_R1_00001

Panjit International Inc.

SOT-23, MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

BSC0901NSIATMA1

Infineon Technologies

MOSFET N-CH 30V 28A/100A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
• Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

封裝: -

DMN3069L-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 309 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW
• Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

BS170-D27Z

onsemi

MOSFET N-CH 60V 500MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 830mW (Ta)
• Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

封裝: -

IPDD60R125CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 27A HDSOP-10

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 340µA
• Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 176W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-10-1
• Package / Case: 10-PowerSOP Module

封裝: -

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