圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存312,000 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 13.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A 5DFN
|
封裝: 4-VSFN Exposed Pad |
庫存6,048 |
|
MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25nC @ 10V | 890pF @ 300V | ±30V | Super Junction | 104W (Tc) | 300 mOhm @ 5.8A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 34A 8SOP ADV
|
封裝: 8-PowerVDFN |
庫存6,848 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 36nC @ 10V | 3430pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 5.3 mOhm @ 17A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 16A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存415,896 |
|
MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 4V @ 250µA | 39nC @ 20V | 570pF @ 25V | ±20V | - | 64W (Tc) | 90 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 30V 61A LFPAK
|
封裝: SC-100, SOT-669 |
庫存36,000 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 17.8nC @ 10V | 1006pF @ 12V | ±20V | - | 46W (Tc) | 8 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
STMicroelectronics |
MOSFET N-CH 500V 31A TO-247
|
封裝: TO-247-3 |
庫存101,256 |
|
MOSFET (Metal Oxide) | 500V | 31A (Tc) | 10V | 4.5V @ 150µA | 266nC @ 10V | 6110pF @ 25V | ±30V | - | 350W (Tc) | 130 mOhm @ 15.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 6A TO-247
|
封裝: TO-247-3 |
庫存3,264 |
|
MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 5V @ 1mA | 92nC @ 10V | 2830pF @ 25V | ±30V | - | 250W (Tc) | 2.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 1200V 6A D2PAK
|
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
庫存5,360 |
|
MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 5V @ 1mA | 92nC @ 10V | 2830pF @ 25V | ±30V | - | 250W (Tc) | 2.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V SO8FL
|
封裝: 8-PowerTDFN, 5 Leads |
庫存7,200 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6nC @ 10V | 987pF @ 15V | ±20V | - | 2.49W (Ta), 23.6W (Tc) | 5.88 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 47A POWER56
|
封裝: 8-PowerTDFN |
庫存6,320 |
|
MOSFET (Metal Oxide) | 30V | 47A (Ta), 100A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 206nC @ 10V | 14765pF @ 15V | ±20V | - | 3.3W (Ta), 125W (Tc) | 0.99 mOhm @ 36A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool?56 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 75V 50A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存6,576 |
|
MOSFET (Metal Oxide) | 75V | 9A (Ta), 50A (Tc) | 6V, 10V | 4V @ 250µA | 47nC @ 10V | 1874pF @ 25V | ±20V | - | 135W (Tc) | 16 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC
|
封裝: 8-SOIC (0.154", 3.90mm Width) |
庫存58,620 |
|
MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 48nC @ 4.5V | 1600pF @ 15V | ±12V | - | 2.5W (Ta) | 22 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
EPC |
TRANS GAN 200V 12A BUMPED DIE
|
封裝: Die |
庫存53,100 |
|
GaNFET (Gallium Nitride) | 200V | 12A (Ta) | 5V | 2.5V @ 3mA | 7.5nC @ 5V | 540pF @ 100V | +6V, -4V | - | - | 25 mOhm @ 6A, 5V | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
||
Vishay Siliconix |
MOSFET P-CH 40V 50A
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存2,288 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155nC @ 10V | 6675pF @ 20V | ±20V | - | 136W (Tc) | 9.4 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N CH 620V 5.5A I2PAKFP
|
封裝: TO-262-3 Full Pack, I2Pak |
庫存12,468 |
|
MOSFET (Metal Oxide) | 620V | 5.5A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 875pF @ 50V | ±30V | - | 30W (Tc) | 1.2 Ohm @ 2.8A, 10V | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT6
|
封裝: SOT-23-6 Thin, TSOT-23-6 |
庫存450,660 |
|
MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 3.3nC @ 4.5V | 135pF @ 10V | 12V | - | 1.25W (Ta) | 125 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK
|
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63 |
庫存24,828 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 110W (Tc) | 65 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET P-CH 500V 10A TO-220
|
封裝: TO-220-3 |
庫存7,224 |
|
MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 2840pF @ 25V | ±20V | - | 300W (Tc) | 1 Ohm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 2.3A 6SSOT
|
封裝: SOT-23-6 Thin, TSOT-23-6 |
庫存1,932,000 |
|
MOSFET (Metal Oxide) | 150V | 2.3A (Ta) | 6V, 10V | 4V @ 250µA | 6nC @ 10V | 345pF @ 75V | ±20V | - | 1.6W (Ta) | 144 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
NTE Electronics, Inc |
MOSFET N-CHANNEL 400V 10A TO220
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 4V @ 250µA | 63 nC @ 10 V | 1400 pF @ 25 V | ±20V | - | 125W (Tc) | 550mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 950V 4A TO251-3
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 3.5V @ 80µA | 10 nC @ 10 V | 330 pF @ 400 V | ±20V | - | 37W (Tc) | 2Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
|
封裝: - |
庫存17,880 |
|
MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 5V @ 250µA | 63 nC @ 10 V | 2733 pF @ 100 V | ±30V | - | 184W (Tc) | 85mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 100V 140A TO220AB
|
封裝: - |
庫存246 |
|
MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 4V @ 250µA | 111.7 nC @ 10 V | 8474 pF @ 50 V | ±20V | - | 187W (Tc) | 5mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
|
封裝: - |
庫存17,835 |
|
MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.5W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
||
Goford Semiconductor |
P-40V,-70A,RD(MAX)<7M@-10V,VTH-1
|
封裝: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 106 nC @ 10 V | 6407 pF @ 20 V | ±20V | - | 277W (Tc) | 7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 30A TO220-FP
|
封裝: - |
庫存1,428 |
|
MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 3.5V @ 960µA | 96 nC @ 10 V | 2127 pF @ 100 V | ±20V | - | 34W (Tc) | 125mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Microchip Technology |
PM-MOSFET-SIC-SBD-BL1
|
封裝: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 79A | 20V | 2.8V @ 1mA | 232 nC @ 20 V | 3020 pF @ 1000 V | +25V, -10V | - | 310W | 31mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | - | Module |
||
Vishay Siliconix |
P-CHANNEL 40-V (D-S) 175C MOSFET
|
封裝: - |
庫存7,500 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 280 nC @ 10 V | 14500 pF @ 25 V | ±20V | - | 107W (Tc) | 5.1mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |