頁 1475 - 電晶體 - FET、MOSFET - 單 | 離散半導體產品 | 黑森爾電子
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電晶體 - FET、MOSFET - 單

記錄 42,029
頁  1,475/1,502
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零件編號
製造商
描述
封裝
庫存
數量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPP80N06S209AKSA1
Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存2,784
MOSFET (Metal Oxide)
55V
80A (Tc)
10V
4V @ 125µA
80nC @ 10V
2360pF @ 25V
±20V
-
190W (Tc)
9.1 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
BSP296 E6433
Infineon Technologies

MOSFET N-CH 100V 1.1A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.79W (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封裝: TO-261-4, TO-261AA
庫存3,376
MOSFET (Metal Oxide)
100V
1.1A (Ta)
4.5V, 10V
1.8V @ 400µA
17.2nC @ 10V
364pF @ 25V
±20V
-
1.79W (Ta)
700 mOhm @ 1.1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
hot IRF730ALPBF
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存42,000
MOSFET (Metal Oxide)
400V
5.5A (Tc)
10V
4.5V @ 250µA
22nC @ 10V
600pF @ 25V
±30V
-
74W (Tc)
1 Ohm @ 3.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
hot NTD95N02RG
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta), 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存61,020
MOSFET (Metal Oxide)
24V
12A (Ta), 32A (Tc)
4.5V, 10V
2V @ 250µA
21nC @ 4.5V
2400pF @ 20V
±20V
-
1.25W (Ta), 86W (Tc)
5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
HUFA76437S3S
Fairchild/ON Semiconductor

MOSFET N-CH 60V 71A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 155W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 71A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存6,224
MOSFET (Metal Oxide)
60V
71A (Tc)
4.5V, 10V
3V @ 250µA
71nC @ 10V
2230pF @ 25V
±16V
-
155W (Tc)
14 mOhm @ 71A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot HUF76619D3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存20,700
MOSFET (Metal Oxide)
100V
18A (Tc)
4.5V, 10V
3V @ 250µA
29nC @ 10V
767pF @ 25V
±16V
-
75W (Tc)
85 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFR9020TR
Vishay Siliconix

MOSFET P-CH 50V 9.9A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存8,940
MOSFET (Metal Oxide)
50V
9.9A (Tc)
10V
4V @ 250µA
14nC @ 10V
490pF @ 25V
±20V
-
42W (Tc)
280 mOhm @ 5.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRF1405
Infineon Technologies

MOSFET N-CH 55V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存5,632
MOSFET (Metal Oxide)
55V
75A (Tc)
10V
4V @ 250µA
260nC @ 10V
5480pF @ 25V
±20V
-
330W (Tc)
5.3 mOhm @ 101A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXTQ120N15P
IXYS

MOSFET N-CH 150V 120A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 600W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
封裝: TO-3P-3, SC-65-3
庫存3,456
MOSFET (Metal Oxide)
150V
120A (Tc)
10V
5V @ 250µA
150nC @ 10V
4900pF @ 25V
±20V
-
600W (Tc)
16 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
IPS80R1K2P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
封裝: TO-251-3 Stub Leads, IPak
庫存4,592
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
3.5V @ 80µA
11nC @ 10V
300pF @ 500V
±20V
-
37W (Tc)
1.2 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
NTTFS4965NFTWG
ON Semiconductor

MOSFET N-CH 30V 64A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2075pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封裝: 8-PowerWDFN
庫存3,344
MOSFET (Metal Oxide)
30V
16.3A (Ta), 64A (Tc)
-
2.3V @ 250µA
29.4nC @ 10V
2075pF @ 15V
-
-
-
3.5 mOhm @ 20A, 10V
-
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
hot QS5U21TR
Rohm Semiconductor

MOSFET P-CH 20V 1.5A TSMT5

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT5
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
封裝: SOT-23-5 Thin, TSOT-23-5
庫存36,000
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
2V @ 1mA
4.2nC @ 4.5V
325pF @ 10V
±12V
Schottky Diode (Isolated)
1.25W (Ta)
200 mOhm @ 1.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT5
SOT-23-5 Thin, TSOT-23-5
hot AOD5N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存316,344
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4.5V @ 250µA
14nC @ 10V
670pF @ 25V
±30V
-
104W (Tc)
1.6 Ohm @ 2.5A, 10V
-50°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRFB38N20DPBF
Infineon Technologies

MOSFET N-CH 200V 43A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封裝: TO-220-3
庫存52,092
MOSFET (Metal Oxide)
200V
43A (Tc)
10V
5V @ 250µA
91nC @ 10V
2900pF @ 25V
±20V
-
3.8W (Ta), 300W (Tc)
54 mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFR3410TRPBF
Infineon Technologies

MOSFET N-CH 100V 31A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存361,044
MOSFET (Metal Oxide)
100V
31A (Tc)
10V
4V @ 250µA
56nC @ 10V
1690pF @ 25V
±20V
-
3W (Ta), 110W (Tc)
39 mOhm @ 18A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot CSD17501Q5A
Texas Instruments

MOSFET N-CH 30V 100A 8SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON (5x6)
  • Package / Case: 8-PowerTDFN
封裝: 8-PowerTDFN
庫存6,320
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
1.8V @ 250µA
17nC @ 4.5V
2630pF @ 15V
±20V
-
3.2W (Ta)
2.9 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON (5x6)
8-PowerTDFN
hot FDD8445_F085
Fairchild/ON Semiconductor

MOSFET N-CH 40V 70A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存660,012
MOSFET (Metal Oxide)
40V
70A (Tc)
10V
4V @ 250µA
59nC @ 10V
4050pF @ 25V
±20V
-
79W (Tc)
8.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot SPB17N80C3
Infineon Technologies

MOSFET N-CH 800V 17A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存1,362,132
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
3.9V @ 1mA
177nC @ 10V
2300pF @ 100V
±20V
-
227W (Tc)
290 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIA437DJ-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 29.7A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 29.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 8A, 4.5V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SC-70-6 Single
  • Package / Case: PowerPAK? SC-70-6
封裝: PowerPAK? SC-70-6
庫存263,754
MOSFET (Metal Oxide)
20V
29.7A (Tc)
1.5V, 4.5V
900mV @ 250µA
90nC @ 8V
2340pF @ 10V
±8V
-
3.5W (Ta), 19W (Tc)
14.5 mOhm @ 8A, 4.5V
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Single
PowerPAK? SC-70-6
DMP1011LFVQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
  • Vgs (Max): -6V
  • FET Feature: -
  • Power Dissipation (Max): 1.05W
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
12 V
13A (Ta), 19A (Tc)
2.5V, 4.5V
1.2V @ 250µA
9.5 nC @ 6 V
913 pF @ 6 V
-6V
-
1.05W
11.7mOhm @ 12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
PMPB11R2VPX
Nexperia USA Inc.

MOSFET P-CH 12V 9.7A DFN2020M-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 9.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
封裝: -
Request a Quote
MOSFET (Metal Oxide)
12 V
9.7A (Ta)
-
900mV @ 250µA
39 nC @ 4.5 V
2230 pF @ 6 V
±8V
-
1.9W (Ta), 12.5W (Tc)
14mOhm @ 9.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN2020MD-6
6-UDFN Exposed Pad
SQM50P08-25L_GE3
Vishay Siliconix

MOSFET P-CHANNEL 80V 50A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
庫存28,671
MOSFET (Metal Oxide)
80 V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
137 nC @ 10 V
5350 pF @ 25 V
±20V
-
150W (Tc)
25mOhm @ 12.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDMT800120DC-22897
onsemi

FET 120V 4.2 MOHM PQFN88

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool™88
  • Package / Case: 8-PowerVDFN
封裝: -
Request a Quote
MOSFET (Metal Oxide)
120 V
20A (Ta), 128A (Tc)
6V, 10V
4V @ 250µA
107 nC @ 10 V
7850 pF @ 60 V
±20V
-
3.2W (Ta), 156W (Tc)
4.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool™88
8-PowerVDFN
HAT2173HWS-E
Renesas Electronics Corporation

MOSFET N-CH 100V 25A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 6V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
封裝: -
Request a Quote
MOSFET (Metal Oxide)
100 V
25A (Ta)
8V, 10V
6V @ 20mA
61 nC @ 10 V
4350 pF @ 10 V
±20V
-
30W (Tc)
15mOhm @ 12.5A, 10V
150°C
Surface Mount
LFPAK
SC-100, SOT-669
FQD5N50CTM-WS
onsemi

MOSFET N-CHANNEL 500V 4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封裝: -
Request a Quote
MOSFET (Metal Oxide)
500 V
4A (Tc)
10V
4V @ 250µA
24 nC @ 10 V
625 pF @ 25 V
±30V
-
2.5W (Ta)
1.4Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SL3401A-TP
Micro Commercial Co

MOSFET P-CH 30V 4.4A SOT23-3L

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3L
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封裝: -
Request a Quote
MOSFET (Metal Oxide)
30 V
4.4A (Tj)
2.5V, 10V
1.3V @ 250µA
-
1050 pF @ 15 V
±12V
-
1.5W
60mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3L
TO-236-3, SC-59, SOT-23-3
PJMP120N60EC_T0_00001
Panjit International Inc.

600V SUPER JUNCTION MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 235W (Tc)
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB-L
  • Package / Case: TO-220-3
封裝: -
庫存5,937
MOSFET (Metal Oxide)
600 V
30A (Tc)
10V
4V @ 250µA
51 nC @ 10 V
1960 pF @ 400 V
±30V
-
235W (Tc)
120mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB-L
TO-220-3
IXTA10P15T-TRL
IXYS

MOSFET P-CH 150V 10A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Ta)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封裝: -
Request a Quote
MOSFET (Metal Oxide)
150 V
10A (Tc)
10V
4.5V @ 250µA
36 nC @ 10 V
2210 pF @ 25 V
±15V
-
83W (Ta)
350mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB