電晶體 - FET、MOSFET - 單

IRL3716STRLPBF

Infineon Technologies

MOSFET N-CH 20V 180A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5090pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 210W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7523D1TR

Infineon Technologies

MOSFET N-CH 30V 2.7A MICRO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AON4705L

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 4A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (3x2)
• Package / Case: 8-SMD, Flat Lead

封裝: 8-SMD, Flat Lead

NTD32N06LT4G

ON Semiconductor

MOSFET N-CH 60V 32A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB120N08S404ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 179W (Tc)
• Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9Z34NSPBF

Infineon Technologies

MOSFET P-CH 55V 19A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTH12N150

IXYS

MOSFET N-CH 1500V 12A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 890W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

封裝: TO-247-3

NVMFS5C456NLWFT3G

ON Semiconductor

MOSFET N-CH 40V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

DMP1011LFV-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 6V
• Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 6V
• Vgs (Max): -6V
• FET Feature: -
• Power Dissipation (Max): 2.16W
• Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 12A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

IRF7410TRPBF

Infineon Technologies

MOSFET P-CH 12V 16A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8676pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

SQJ422EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 75A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

STB13N80K5

STMicroelectronics

MOSFET N-CH 800V 12A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 190W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TK50P04M1(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 50A DP TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 25A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DP
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IPD90N03S4L-02

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

SIR484DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 20A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
• Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

RQ6C050UNTR

Rohm Semiconductor

MOSFET N-CH 20V 5A TSMT

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT6 (SC-95)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

PMK35EP,518

Nexperia USA Inc.

MOSFET P-CH 30V 14.9A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 6.9W (Tc)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

SI7145DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 60A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
• Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封裝: PowerPAK? SO-8

BSS123-TP

Micro Commercial Co

MOSFET N-CH 100V 170MA SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 170mA Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW
• Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

XP2P052N

YAGEO XSEMI

MOSFET P-CH 20V 4A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

BTS132E3045ANTMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W
• Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO220-3-5
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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STWA75N60DM6

STMicroelectronics

MOSFET N-CH 600V 72A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 Long Leads
• Package / Case: TO-247-3

封裝: -

RTL020P02FRATR

Rohm Semiconductor

MOSFET P-CH 20V 2A TUMT6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT6
• Package / Case: 6-SMD, Flat Leads

封裝: -

IRFR222

Harris Corporation

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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DMN10H170SFGQ-7

Diodes Incorporated

MOSFET N-CH 100V PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 940mW (Ta)
• Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

封裝: -

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RFL1N12

Harris Corporation

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 8.33W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-205AF (TO-39)
• Package / Case: TO-205AF Metal Can

封裝: -

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STW75N60M6-4

STMicroelectronics

MOSFET N-CH 600V 72A TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.75V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 446W (Tc)
• Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4
• Package / Case: TO-247-4

封裝: -

E3M0060065K

Wolfspeed, Inc.

60M 650V SIC AUTOMOTIVE MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.6V @ 3.6mA
• Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 131W (Tc)
• Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

封裝: -