頁 94 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SSM6L13TU(T5L,F,T)	Toshiba Semiconductor and Storage	MOSFET ARRAY N/P-CH 20V UF6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封裝: 6-SMD, Flat Leads	庫存3,840	Logic Level Gate, 1.8V Drive	20V	800mA (Ta)	143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V	1V @ 1mA	-	268pF @ 10V, 250pF @ 10V	500mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	UF6
AON6938	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 17A/33A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 33A Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封裝: 8-PowerVDFN	庫存290,424	Logic Level Gate	30V	17A, 33A	8.2 mOhm @ 20A, 10V	2.5V @ 250µA	24nC @ 10V	1150pF @ 15V	3.6W, 4.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
AOD607	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 12A TO252 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Power - Max: 2.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD	庫存120,576	Standard	30V	12A (Tc)	25 mOhm @ 12A, 10V	2.5V @ 250µA	25nC @ 10V	1250pF @ 15V	2.1W	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
AOC2802	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WLCSP (1.57x1.57)	封裝: 4-UFBGA, WLCSP	庫存3,344	Logic Level Gate	-	-	-	-	10.4nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-UFBGA, WLCSP	4-WLCSP (1.57x1.57)
SI7904DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 5.3A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 935µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封裝: PowerPAK? 1212-8 Dual	庫存2,284,824	Logic Level Gate	20V	5.3A	30 mOhm @ 7.7A, 4.5V	1V @ 935µA	15nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SIA511DJ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封裝: PowerPAK? SC-70-6 Dual	庫存5,024	Logic Level Gate	12V	4.5A	40 mOhm @ 4.2A, 4.5V	1V @ 250µA	12nC @ 8V	400pF @ 6V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
APTM50DHM35G	Microsemi Corporation	MOSFET 2N-CH 500V 99A SP6 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封裝: SP6	庫存4,736	Standard	500V	99A	39 mOhm @ 49.5A, 10V	5V @ 5mA	280nC @ 10V	14000pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
GWM180-004X2-SMDSAM	IXYS	MOSFET 6N-CH 40V 180A 17-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	封裝: 17-SMD, Gull Wing	庫存2,112	Standard	40V	180A	2.5 mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
EFC4C002NLTDG	ON Semiconductor	MOSFET 2N-CH 8WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Power - Max: 2.6W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-XFBGA, WLCSP Supplier Device Package: 8-WLCSP (6x2.5)	封裝: 8-XFBGA, WLCSP	庫存3,712	Logic Level Gate	-	-	-	2.2V @ 1mA	45nC @ 4.5V	6200pF @ 15V	2.6W	150°C (TJ)	Surface Mount	8-XFBGA, WLCSP	8-WLCSP (6x2.5)
NVMFD5485NLT3G	ON Semiconductor	MOSFET 2N-CH 60V 5.3A DFN8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 2.9W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封裝: 8-PowerTDFN	庫存5,568	Logic Level Gate	60V	5.3A	44 mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 10V	560pF @ 25V	2.9W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
AON7934	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 13A/15A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 15A Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)	封裝: 8-WDFN Exposed Pad	庫存416,268	Logic Level Gate	30V	13A, 15A	10.2 mOhm @ 13A, 10V	2.2V @ 250µA	11nC @ 10V	485pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (3x3)
ECH8661-TL-H	ON Semiconductor	MOSFET N/P-CH 30V 7A/5.5A ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封裝: 8-SMD, Flat Lead	庫存6,976	Logic Level Gate	30V	7A, 5.5A	24 mOhm @ 3.5A, 10V	-	11.8nC @ 10V	710pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
IRF7343PBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存9,528	Standard	55V	4.7A, 3.4A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NX3008NBKS,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.35A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,856	Logic Level Gate	30V	350mA	1.4 Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.68nC @ 4.5V	50pF @ 15V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
ALD1102PAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8DIP FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,720	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
FDMB3900AN	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 7A 8-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP, MicroFET (3x1.9)	封裝: 8-PowerWDFN	庫存75,120	Logic Level Gate	25V	7A	23 mOhm @ 7A, 10V	3V @ 250µA	17nC @ 10V	890pF @ 13V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP, MicroFET (3x1.9)
NVXR22S90M2SPC	onsemi	SIC 900V 6D MOSFET V-SSDC SPC FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 510A (Tj) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V Vgs(th) (Max) @ Id: 4.3V @ 150mA Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V Power - Max: 900W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SSDC39	封裝: -	Request a Quote	-	900V	510A (Tj)	2.7mOhm @ 510A, 18V	4.3V @ 150mA	1800nC @ 18V	35000pF @ 400V	900W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SSDC39
UM6X1NA-TP	Micro Commercial Co	MOSFET 2N-CH 30V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存11,028	-	30V	500mA	750mOhm @ 300mA, 10V	1.5V @ 250µA	1.28nC @ 10V	28pF @ 15V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
BSM600D12P4G103	Rohm Semiconductor	SIC 2N-CH 1200V 567A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 567A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.8V @ 291.2mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 10V Power - Max: 1.78kW (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	庫存12	-	1200V (1.2kV)	567A (Tc)	-	4.8V @ 291.2mA	-	59000pF @ 10V	1.78kW (Tc)	175°C (TJ)	Chassis Mount	Module	Module
QH8ME5TCR	Rohm Semiconductor	100V 2A, DUAL NCH+PCH, TSMT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 19.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: -	Request a Quote	-	100V	2A (Ta)	202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V	2.5V @ 1mA	2.8nC @ 10V, 19.7nC @ 10V	90pF @ 50V, 590pF @ 50V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
BUK9K17-60E-1X	Nexperia USA Inc.	MOSFET 60V 26A LFPAK56D FET Type: - FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封裝: -	Request a Quote	Logic Level Gate	60V	26A (Ta)	15.6mOhm @ 10A, 10V	2.1V @ 1mA	16.5nC @ 5V	2223pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SI9934DY	Fairchild Semiconductor	MOSFET 2P-CH 20V 5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	-	20V	5A (Ta)	50mOhm @ 5A, 4.5V	1.5V @ 250µA	16nC @ 4.5V	1015pF @ 10V	900mW (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PJL9808_R2_00001	Panjit International Inc.	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 25V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	30V	8A (Ta)	19mOhm @ 8A, 10V	2.5V @ 250µA	4.3nC @ 4.5V	392pF @ 25V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UPA1872BGR-9JG-E1-A	Renesas Electronics Corporation	MOSFET 2N-CH 20V 10A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	Logic Level Gate	20V	10A	13mOhm @ 5A, 4.5V	1.5V @ 1mA	10nC @ 4V	945pF @ 10V	2W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
RFF70N06-3	Harris Corporation	MOSFET N-CH 60V 25A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120DUM11T3AG	Microchip Technology	SIC 2N-CH 1200V 254A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Power - Max: 1067W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封裝: -	Request a Quote	-	1200V (1.2kV)	254A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9060pF @ 1000V	1067W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MMIX2F60N50P3	IXYS	MOSFET 2N-CH 500V 30A 24SMPD FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V Power - Max: 320W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD Module, 9 Leads Supplier Device Package: 24-SMPD	封裝: -	Request a Quote	-	500V	30A (Tc)	110mOhm @ 30A, 10V	5V @ 4mA	96nC @ 10V	6250pF @ 25V	320W	-55°C ~ 150°C (TJ)	Surface Mount	24-SMD Module, 9 Leads	24-SMPD
NDS9933	onsemi	MOSFET 2P-CH 20V 3.2A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Power - Max: 900mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	Logic Level Gate	20V	3.2A	110mOhm @ 3.2A, 4.5V	1V @ 250µA	20nC @ 4.5V	870pF @ 10V	900mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage

MOSFET ARRAY N/P-CH 20V UF6

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封裝: 6-SMD, Flat Leads

庫存3,840

Logic Level Gate, 1.8V Drive

20V

800mA (Ta)

143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V

1V @ 1mA

-

268pF @ 10V, 250pF @ 10V

500mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

UF6

AON6938

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17A/33A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 33A
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封裝: 8-PowerVDFN

庫存290,424

Logic Level Gate

30V

17A, 33A

8.2 mOhm @ 20A, 10V

2.5V @ 250µA

24nC @ 10V

1150pF @ 15V

3.6W, 4.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

AOD607

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 12A TO252

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD

庫存120,576

Standard

30V

12A (Tc)

25 mOhm @ 12A, 10V

2.5V @ 250µA

25nC @ 10V

1250pF @ 15V

2.1W

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

AOC2802

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WLCSP (1.57x1.57)

封裝: 4-UFBGA, WLCSP

庫存3,344

Logic Level Gate

-

10.4nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

4-UFBGA, WLCSP

4-WLCSP (1.57x1.57)

SI7904DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 5.3A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 935µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封裝: PowerPAK? 1212-8 Dual

庫存2,284,824

Logic Level Gate

20V

5.3A

30 mOhm @ 7.7A, 4.5V

1V @ 935µA

15nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SIA511DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封裝: PowerPAK? SC-70-6 Dual

庫存5,024

Logic Level Gate

12V

4.5A

40 mOhm @ 4.2A, 4.5V

1V @ 250µA

12nC @ 8V

400pF @ 6V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

APTM50DHM35G

Microsemi Corporation

MOSFET 2N-CH 500V 99A SP6

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封裝: SP6

庫存4,736

Standard

500V

99A

39 mOhm @ 49.5A, 10V

5V @ 5mA

280nC @ 10V

14000pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

GWM180-004X2-SMDSAM

IXYS

MOSFET 6N-CH 40V 180A 17-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

封裝: 17-SMD, Gull Wing

庫存2,112

Standard

40V

180A

2.5 mOhm @ 100A, 10V

4.5V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

EFC4C002NLTDG

ON Semiconductor

MOSFET 2N-CH 8WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 2.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP (6x2.5)

封裝: 8-XFBGA, WLCSP

庫存3,712

Logic Level Gate

-

2.2V @ 1mA

45nC @ 4.5V

6200pF @ 15V

2.6W

150°C (TJ)

Surface Mount

8-XFBGA, WLCSP

8-WLCSP (6x2.5)

NVMFD5485NLT3G

ON Semiconductor

MOSFET 2N-CH 60V 5.3A DFN8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封裝: 8-PowerTDFN

庫存5,568

Logic Level Gate

60V

5.3A

44 mOhm @ 15A, 10V

2.5V @ 250µA

20nC @ 10V

560pF @ 25V

2.9W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

AON7934

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 13A/15A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Rds On (Max) @ Id, Vgs: 10.2 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (3x3)

封裝: 8-WDFN Exposed Pad

庫存416,268

Logic Level Gate

30V

13A, 15A

10.2 mOhm @ 13A, 10V

2.2V @ 250µA

11nC @ 10V

485pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (3x3)

ECH8661-TL-H

ON Semiconductor

MOSFET N/P-CH 30V 7A/5.5A ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封裝: 8-SMD, Flat Lead

庫存6,976

Logic Level Gate

30V

7A, 5.5A

24 mOhm @ 3.5A, 10V

-

11.8nC @ 10V

710pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

IRF7343PBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存9,528

Standard

55V

4.7A, 3.4A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NX3008NBKS,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.35A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,856

Logic Level Gate

30V

350mA

1.4 Ohm @ 350mA, 4.5V

1.1V @ 250µA

0.68nC @ 4.5V

50pF @ 15V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

ALD1102PAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,720

Standard

10.6V

-

270 Ohm @ 5V

1.2V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

FDMB3900AN

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 7A 8-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP, MicroFET (3x1.9)

封裝: 8-PowerWDFN

庫存75,120

Logic Level Gate

25V

7A

23 mOhm @ 7A, 10V

3V @ 250µA

17nC @ 10V

890pF @ 13V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP, MicroFET (3x1.9)

NVXR22S90M2SPC

onsemi

SIC 900V 6D MOSFET V-SSDC SPC

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 510A (Tj)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 510A, 18V
Vgs(th) (Max) @ Id: 4.3V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 1800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 400V
Power - Max: 900W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SSDC39

封裝: -

Request a Quote

-

900V

510A (Tj)

2.7mOhm @ 510A, 18V

4.3V @ 150mA

1800nC @ 18V

35000pF @ 400V

900W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SSDC39

UM6X1NA-TP

Micro Commercial Co

MOSFET 2N-CH 30V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 750mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存11,028

-

30V

500mA

750mOhm @ 300mA, 10V

1.5V @ 250µA

1.28nC @ 10V

28pF @ 15V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

BSM600D12P4G103

Rohm Semiconductor

SIC 2N-CH 1200V 567A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 567A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.8V @ 291.2mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 59000pF @ 10V
Power - Max: 1.78kW (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

庫存12

-

1200V (1.2kV)

567A (Tc)

-

4.8V @ 291.2mA

-

59000pF @ 10V

1.78kW (Tc)

175°C (TJ)

Chassis Mount

Module

QH8ME5TCR

Rohm Semiconductor

100V 2A, DUAL NCH+PCH, TSMT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: -

Request a Quote

-

100V

2A (Ta)

202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V

2.5V @ 1mA

2.8nC @ 10V, 19.7nC @ 10V

90pF @ 50V, 590pF @ 50V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

BUK9K17-60E-1X

Nexperia USA Inc.

MOSFET 60V 26A LFPAK56D

FET Type: -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
Power - Max: 53W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封裝: -

Request a Quote

Logic Level Gate

60V

26A (Ta)

15.6mOhm @ 10A, 10V

2.1V @ 1mA

16.5nC @ 5V

2223pF @ 25V

53W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SI9934DY

Fairchild Semiconductor

MOSFET 2P-CH 20V 5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

-

20V

5A (Ta)

50mOhm @ 5A, 4.5V

1.5V @ 250µA

16nC @ 4.5V

1015pF @ 10V

900mW (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PJL9808_R2_00001

Panjit International Inc.

MOSFET 2N-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 392pF @ 25V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

30V

8A (Ta)

19mOhm @ 8A, 10V

2.5V @ 250µA

4.3nC @ 4.5V

392pF @ 25V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UPA1872BGR-9JG-E1-A

Renesas Electronics Corporation

MOSFET 2N-CH 20V 10A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

Request a Quote

Logic Level Gate

20V

10A

13mOhm @ 5A, 4.5V

1.5V @ 1mA

10nC @ 4V

945pF @ 10V

2W

-

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

RFF70N06-3

Harris Corporation

MOSFET N-CH 60V 25A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MSCSM120DUM11T3AG

Microchip Technology

SIC 2N-CH 1200V 254A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Power - Max: 1067W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封裝: -

Request a Quote

-

1200V (1.2kV)

254A (Tc)

10.4mOhm @ 120A, 20V

2.8V @ 3mA

696nC @ 20V

9060pF @ 1000V

1067W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MMIX2F60N50P3

IXYS

MOSFET 2N-CH 500V 30A 24SMPD

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 25V
Power - Max: 320W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD Module, 9 Leads
Supplier Device Package: 24-SMPD

封裝: -

Request a Quote

-

500V

30A (Tc)

110mOhm @ 30A, 10V

5V @ 4mA

96nC @ 10V

6250pF @ 25V

320W

-55°C ~ 150°C (TJ)

Surface Mount

24-SMD Module, 9 Leads

24-SMPD

NDS9933

onsemi

MOSFET 2P-CH 20V 3.2A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 110mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
Power - Max: 900mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

Logic Level Gate

20V

3.2A

110mOhm @ 3.2A, 4.5V

1V @ 250µA

20nC @ 4.5V

870pF @ 10V

900mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC