頁 92 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559-841
Language Translation

* Please refer to the English Version as our Official Version.

電晶體 - FET、MOSFET - 陣列

記錄 5,684
頁  92/203
圖片
零件編號
製造商
描述
封裝
庫存
數量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AO4914L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
封裝: 8-SOIC
庫存36,000
Standard
30V
8A
20.5 mOhm @ 8A, 10V
2.4V @ 250µA
18nC @ 10V
865pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
hot SI9936BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 4.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存582,900
Logic Level Gate
30V
4.5A
35 mOhm @ 6A, 10V
3V @ 250µA
13nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
FW906-TL-E
ON Semiconductor

MOSFET N/P-CH 30V 8A/6A 8SOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A, 6A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
  • Power - Max: 2.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.173", 4.40mm Width)
庫存5,904
Logic Level Gate
30V
8A, 6A
24 mOhm @ 8A, 10V
-
12nC @ 10V
690pF @ 10V
2.5W
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
hot ECH8659-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 7A ECH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
封裝: 8-SMD, Flat Lead
庫存25,476
Logic Level Gate
30V
7A
24 mOhm @ 3.5A, 10V
-
11.8nC @ 10V
710pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot UP04878G0L
Panasonic Electronic Components

MOSFET 2N-CH 50V .1A SSMINI-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
  • Power - Max: 125mW
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SSMini6-F2
封裝: SOT-563, SOT-666
庫存3,654,144
Logic Level Gate
50V
100mA
12 Ohm @ 10mA, 4V
1.5V @ 1µA
-
12pF @ 3V
125mW
125°C (TJ)
Surface Mount
SOT-563, SOT-666
SSMini6-F2
SI8904EDB-T2-E1
Vishay Siliconix

MOSFET 2N-CH 30V 3.8A 6-MFP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-MICRO FOOT?CSP
  • Supplier Device Package: 6-Micro Foot?
封裝: 6-MICRO FOOT?CSP
庫存4,624
Logic Level Gate
30V
3.8A
-
1.6V @ 250µA
-
-
1W
-55°C ~ 150°C (TJ)
Surface Mount
6-MICRO FOOT?CSP
6-Micro Foot?
IPG20N06S4L14ATMA2
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
  • Power - Max: 50W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
封裝: 8-PowerVDFN
庫存6,944
Logic Level Gate
60V
20A
13.7 mOhm @ 17A, 10V
2.2V @ 20µA
39nC @ 10V
2890pF @ 25V
50W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
APTSM120AM55CT1AG
Microsemi Corporation

POWER MODULE - SIC

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
  • Power - Max: 470W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封裝: SP1
庫存2,544
Silicon Carbide (SiC)
1200V (1.2kV)
74A (Tc)
50 mOhm @ 40A, 20V
3V @ 2mA
272nC @ 20V
5120pF @ 1000V
470W
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
GWM100-0085X1-SMD SAM
IXYS

MOSFET 6N-CH 85V 103A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 103A
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Gull Wing
  • Supplier Device Package: ISOPLUS-DIL?
封裝: 17-SMD, Gull Wing
庫存2,672
Standard
85V
103A
6.2 mOhm @ 75A, 10V
4V @ 250µA
114nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Gull Wing
ISOPLUS-DIL?
GWM100-01X1-SLSAM
IXYS

MOSFET 6N-CH 100V 90A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
封裝: 17-SMD, Flat Leads
庫存3,200
Standard
100V
90A
8.5 mOhm @ 80A, 10V
4.5V @ 250µA
90nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
17-SMD, Flat Leads
ISOPLUS-DIL?
FMP36-015P
IXYS

MOSFET N/P-CH 150V 36A/22A I4PAC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 36A, 22A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Power - Max: 125W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
封裝: i4-Pac?-5
庫存4,208
Standard
150V
36A, 22A
40 mOhm @ 31A, 10V
5.5V @ 250µA
70nC @ 10V
2250pF @ 25V
125W
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
hot SI4936BDY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.9A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存10,188
Logic Level Gate
30V
6.9A
35 mOhm @ 5.9A, 10V
3V @ 250µA
15nC @ 10V
530pF @ 15V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON6810
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 25A 8-DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 15V
  • Power - Max: 4.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5.2x5.55)
封裝: 8-SMD, Flat Lead Exposed Pad
庫存3,792
Logic Level Gate
30V
25A
4.4 mOhm @ 20A, 10V
2.2V @ 250µA
34nC @ 10V
1720pF @ 15V
4.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead Exposed Pad
8-DFN-EP (5.2x5.55)
DMN2028UFU-13
Diodes Incorporated

MOSFET 2N-CH 20V 7.9A UDFN2020-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
封裝: 6-UFDFN Exposed Pad
庫存6,640
Standard
20V
7.5A
20.2 mOhm @ 4.5A, 4.5V
1V @ 250µA
18.4nC @ 8V
887pF @ 10V
900mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFDFN Exposed Pad
U-DFN2030-6 (Type B)
BUK9K89-100E,115
Nexperia USA Inc.

MOSFET 2N-CH 100V 12.5A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1108pF @ 25V
  • Power - Max: 38W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
封裝: SOT-1205, 8-LFPAK56
庫存7,456
Logic Level Gate
100V
12.5A
85 mOhm @ 5A, 10V
2.1V @ 1mA
16.8nC @ 10V
1108pF @ 25V
38W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
CSD87355Q5D
Texas Instruments

MOSFET 2N-CH 30V 8LSON

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V
  • Power - Max: 12W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (5x6)
封裝: 8-PowerLDFN
庫存4,928
Standard
30V
-
-
1.9V @ 250µA
13.7nC @ 4.5V
1860pF @ 15V
12W
-55°C ~ 150°C (TJ)
-
8-PowerLDFN
8-LSON (5x6)
hot NTUD3170NZT5G
ON Semiconductor

MOSFET 2N-CH 20V 0.22A SOT-963

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
  • Power - Max: 125mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封裝: SOT-963
庫存703,560
Logic Level Gate
20V
220mA
1.5 Ohm @ 100mA, 4.5V
1V @ 250µA
-
12.5pF @ 15V
125mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
DMT6017LDV-13
Diodes Incorporated

MOSFET 2N-CH 25.3A POWERDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
封裝: -
Request a Quote
-
-
25.3A (Tc)
22mOhm @ 6A, 10V
2.3V @ 250µA
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
DMTH6015LDVWQ-13
Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 24.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 20.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
  • Power - Max: 1.46W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXD)
封裝: -
Request a Quote
-
60V
9.2A (Ta), 24.5A (Tc)
20.5mOhm @ 10A, 10V
2.5V @ 250µA
14.3nC @ 10V
825pF @ 30V
1.46W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXD)
TQM150NB04DCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 9A/39A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 39A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 20V
  • Power - Max: 2.4W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
封裝: -
庫存5,043
-
40V
9A (Ta), 39A (Tc)
15mOhm @ 9A, 10V
4V @ 250µA
18nC @ 10V
1135pF @ 20V
2.4W (Ta), 48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
8-PDFNU (5x6)
DMN62D2UVTQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
封裝: -
Request a Quote
-
60V
455mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
TSOT-26
AOSD62666E
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 9.5A 8SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V
  • Power - Max: 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: -
庫存43,119
Logic Level Gate
60V
9.5A (Ta)
14.5mOhm @ 9.5A, 10V
2.2V @ 250µA
10nC @ 4.5V
755pF @ 30V
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FDG6301N-F085
onsemi

MOSFET 2N-CH 25V 0.22A SC88

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88 (SC-70-6)
封裝: -
Request a Quote
Logic Level Gate
25V
220mA
4Ohm @ 220mA, 4.5V
1.5V @ 250µA
0.4nC @ 4.5V
9.5pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88 (SC-70-6)
QH8KB6TCR
Rohm Semiconductor

MOSFET 2N-CH 40V 8A TSMT8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Rds On (Max) @ Id, Vgs: 17.7mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: TSMT8
封裝: -
庫存17,850
-
40V
8A (Ta)
17.7mOhm @ 8A, 10V
2.5V @ 1mA
10.6nC @ 10V
530pF @ 20V
1.1W (Ta)
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
TSMT8
TPIC1533DW
Texas Instruments

SMALL SIGNAL N-CHANNEL MOSFET

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM120HM16CT3AG
Microchip Technology

SIC 4N-CH 1200V 173A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 745W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
封裝: -
Request a Quote
-
1200V (1.2kV)
173A (Tc)
16mOhm @ 80A, 20V
2.8V @ 2mA
464nC @ 20V
6040pF @ 1000V
745W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
DMN2030UCA4-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.3A 4DSN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 523pF @ 10V
  • Power - Max: 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, DSBGA
  • Supplier Device Package: X4-DSN1111-4
封裝: -
Request a Quote
-
20V
6.3A (Ta)
32mOhm @ 1.7A, 4.5V
1.4V @ 160µA
5.6nC @ 10V
523pF @ 10V
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-XFBGA, DSBGA
X4-DSN1111-4
IPB13N03LBG
Infineon Technologies

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-