頁 65 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AON4807_101	Alpha & Omega Semiconductor Inc.	MOSFET P-CH DUAL DFN FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	封裝: 8-VDFN Exposed Pad	庫存5,744	Standard	30V	4A	68 mOhm @ 4A, 10V	2.3V @ 250µA	10nC @ 10V	290pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (3x2)
AO4801L	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,592	Standard	30V	5A (Ta)	48 mOhm @ 5A, 10V	1.3V @ 250µA	9nC @ 4.5V	780pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4913DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 7.1A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.1A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存145,824	Logic Level Gate	20V	7.1A	15 mOhm @ 9.4A, 4.5V	1V @ 500µA	65nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3951DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 2.7A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存156,300	Logic Level Gate	20V	2.7A	115 mOhm @ 2.5A, 4.5V	1.5V @ 250µA	5.1nC @ 5V	250pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
PHN210,118	NXP	MOSFET 2N-CH 30V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,568	Logic Level Gate	30V	-	100 mOhm @ 2.2A, 10V	2.8V @ 1mA	6nC @ 10V	250pF @ 20V	2W	-65°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002VA-7-F	Diodes Incorporated	MOSFET 2N-CH 60V 0.28A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存4,848	Standard	60V	280mA	7.5 Ohm @ 50mA, 5V	2.5V @ 250µA	-	50pF @ 25V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTJD4001NT1	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,376	Standard	30V	250mA	1.5 Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
AUIRF7379QTR	Infineon Technologies	MOSFET N/P-CH 30V 5.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,696	Logic Level Gate	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	3V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTMC120TAM12CTPAG	Microsemi Corporation	MOSFET 6N-CH 1200V 220A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封裝: SP6	庫存2,944	Standard	1200V (1.2kV)	220A	12 mOhm @ 150A, 20V	2.4V @ 30mA (Typ)	483nC @ 20V	8400pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
ALD114835PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V Vgs(th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封裝: 16-DIP (0.300", 7.62mm)	庫存4,960	Depletion Mode	10.6V	12mA, 3mA	540 Ohm @ 0V	3.45V @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
NTMFD4C88NT1G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	封裝: 8-PowerTDFN	庫存16,452	Standard	30V	11.7A, 14.2A	5.4 mOhm @ 10A, 10V	2.2V @ 250µA	22.2nC @ 10V	1252pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
NVMFD5873NLWFT1G	ON Semiconductor	MOSFET 2N-CH 60V 10A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Power - Max: 3.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封裝: 8-PowerTDFN	庫存3,376	Logic Level Gate	60V	10A	13 mOhm @ 15A, 10V	2.5V @ 250µA	30.5nC @ 10V	1560pF @ 25V	3.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FDMC9430L_F085	Fairchild/ON Semiconductor	DUAL PT8 N 40/20V SYNCFET IN MLP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP (3x3)	封裝: 8-PowerWDFN	庫存17,100	Standard	40V	12A	8 mOhm @ 12A, 10V	3V @ 250µA	22nC @ 10V	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP (3x3)
DMC6070LND-13	Diodes Incorporated	MOSFET N/P-CH 60V 8POWERDI FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	封裝: 8-PowerVDFN	庫存6,784	Standard	60V	3.1A, 2.4A	85 mOhm @ 1.5A, 10V	3V @ 250µA	11.5nC @ 10V	731pF @ 20V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8
AO4854	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,288	Logic Level Gate	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PMDPB70XP,115	Nexperia USA Inc.	MOSFET 2P-CH 30V 2.9A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封裝: 6-UDFN Exposed Pad	庫存6,960	Logic Level Gate	30V	2.9A	87 mOhm @ 2.9A, 4.5V	1V @ 250µA	7.8nC @ 5V	680pF @ 15V	490mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SSM6N37FE,LM(T	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A 2-2N1D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存3,264	Logic Level Gate	20V	250mA	2.2 Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
EM6K31GT2R	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 120mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封裝: SOT-563, SOT-666	庫存22,560	Logic Level Gate, 2.5V Drive	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	120mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
FDMS3624S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/30A 8PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封裝: 8-PowerTDFN	庫存262,578	Logic Level Gate	25V	17.5A, 30A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
GSFCP0212	Good-Ark Semiconductor	MOSFET 20V 12A 6CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-CSP (2.15x1.66)	封裝: -	庫存15,000	-	20V	12A (Ta)	6.8mOhm @ 3A, 4.5V	1.2V @ 250µA	34.7nC @ 6V	2609pF @ 10V	2W (Ta)	150°C	Surface Mount	6-SMD, No Lead	6-CSP (2.15x1.66)
SIL2301-TP	Micro Commercial Co	MOSFET 2P-CH 20V 2.3A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封裝: -	庫存72,087	-	20V	2.3A	90mOhm @ 2.5A, 4.5V	1V @ 250µA	10nC @ 4.5V	405pF @ 10V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
SQJ992EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 15A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存23,757	-	60V	15A (Tc)	56.2mOhm @ 3.7A, 10V	2.5V @ 250µA	12nC @ 10V	446pF @ 30V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJ956EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 23A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存27,003	-	60V	23A (Tc)	26.7mOhm @ 5.2A, 10V	2.5V @ 250µA	30nC @ 10V	1395pF @ 30V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
TSM150NB04LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 8A/37A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封裝: -	庫存22,350	-	40V	8A (Ta), 37A (Tc)	15mOhm @ 8A, 10V	2.5V @ 250µA	18nC @ 10V	966pF @ 20V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
MSCSM170HM23CT3AG	Microchip Technology	SIC 4N-CH 1700V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM70AM025CD3AG	Microchip Technology	SIC 700V 538A D3 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 538A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: D3	封裝: -	庫存12	-	700V	538A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	D3
DMT35M8LDG-13	Diodes Incorporated	MOSFET 2N-CH 30V 17A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Power - Max: 980mW (Ta), 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	封裝: -	Request a Quote	-	30V	17A (Ta), 15.3A (Ta)	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V	1.9V @ 250µA	22.7nC @ 10V, 16.3nC @ 10V	1510pF @ 15V, 1032pF @ 15V	980mW (Ta), 2W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
SIL3724-TP	Micro Commercial Co	MOSFET N/P-CH 30V 5.8A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.1A Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 700pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封裝: -	Request a Quote	-	30V	5.8A, 4.1A	30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V	2.5V @ 250µA, 2.2V @ 250µA	-	820pF @ 15V, 700pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L

AON4807_101

Alpha & Omega Semiconductor Inc.

MOSFET P-CH DUAL DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

封裝: 8-VDFN Exposed Pad

庫存5,744

Standard

30V

4A

68 mOhm @ 4A, 10V

2.3V @ 250µA

10nC @ 10V

290pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (3x2)

AO4801L

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,592

Standard

30V

5A (Ta)

48 mOhm @ 5A, 10V

1.3V @ 250µA

9nC @ 4.5V

780pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI4913DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 7.1A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.1A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存145,824

Logic Level Gate

20V

7.1A

15 mOhm @ 9.4A, 4.5V

1V @ 500µA

65nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3951DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.7A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存156,300

Logic Level Gate

20V

2.7A

115 mOhm @ 2.5A, 4.5V

1.5V @ 250µA

5.1nC @ 5V

250pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

PHN210,118

NXP

MOSFET 2N-CH 30V 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Power - Max: 2W
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,568

Logic Level Gate

30V

-

100 mOhm @ 2.2A, 10V

2.8V @ 1mA

6nC @ 10V

250pF @ 20V

2W

-65°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002VA-7-F

Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存4,848

Standard

60V

280mA

7.5 Ohm @ 50mA, 5V

2.5V @ 250µA

-

50pF @ 25V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTJD4001NT1

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,376

Standard

30V

250mA

1.5 Ohm @ 10mA, 4V

1.5V @ 100µA

1.3nC @ 5V

33pF @ 5V

272mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

AUIRF7379QTR

Infineon Technologies

MOSFET N/P-CH 30V 5.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,696

Logic Level Gate

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

3V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTMC120TAM12CTPAG

Microsemi Corporation

MOSFET 6N-CH 1200V 220A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封裝: SP6

庫存2,944

Standard

1200V (1.2kV)

220A

12 mOhm @ 150A, 20V

2.4V @ 30mA (Typ)

483nC @ 20V

8400pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

ALD114835PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 540 Ohm @ 0V
Vgs(th) (Max) @ Id: 3.45V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封裝: 16-DIP (0.300", 7.62mm)

庫存4,960

Depletion Mode

10.6V

12mA, 3mA

540 Ohm @ 0V

3.45V @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

NTMFD4C88NT1G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

封裝: 8-PowerTDFN

庫存16,452

Standard

30V

11.7A, 14.2A

5.4 mOhm @ 10A, 10V

2.2V @ 250µA

22.2nC @ 10V

1252pF @ 15V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

NVMFD5873NLWFT1G

ON Semiconductor

MOSFET 2N-CH 60V 10A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封裝: 8-PowerTDFN

庫存3,376

Logic Level Gate

60V

10A

13 mOhm @ 15A, 10V

2.5V @ 250µA

30.5nC @ 10V

1560pF @ 25V

3.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FDMC9430L_F085

Fairchild/ON Semiconductor

DUAL PT8 N 40/20V SYNCFET IN MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3x3)

封裝: 8-PowerWDFN

庫存17,100

Standard

40V

12A

8 mOhm @ 12A, 10V

3V @ 250µA

22nC @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP (3x3)

DMC6070LND-13

Diodes Incorporated

MOSFET N/P-CH 60V 8POWERDI

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.4A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 731pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8

封裝: 8-PowerVDFN

庫存6,784

Standard

60V

3.1A, 2.4A

85 mOhm @ 1.5A, 10V

3V @ 250µA

11.5nC @ 10V

731pF @ 20V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8

AO4854

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,288

Logic Level Gate

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PMDPB70XP,115

Nexperia USA Inc.

MOSFET 2P-CH 30V 2.9A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Power - Max: 490mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封裝: 6-UDFN Exposed Pad

庫存6,960

Logic Level Gate

30V

2.9A

87 mOhm @ 2.9A, 4.5V

1V @ 250µA

7.8nC @ 5V

680pF @ 15V

490mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

SSM6N37FE,LM(T

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A 2-2N1D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存3,264

Logic Level Gate

20V

250mA

2.2 Ohm @ 100mA, 4.5V

1V @ 1mA

-

12pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

EM6K31GT2R

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 120mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

庫存22,560

Logic Level Gate, 2.5V Drive

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

120mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

FDMS3624S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封裝: 8-PowerTDFN

庫存262,578

Logic Level Gate

25V

17.5A, 30A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

GSFCP0212

Good-Ark Semiconductor

MOSFET 20V 12A 6CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.7nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-CSP (2.15x1.66)

封裝: -

庫存15,000

-

20V

12A (Ta)

6.8mOhm @ 3A, 4.5V

1.2V @ 250µA

34.7nC @ 6V

2609pF @ 10V

2W (Ta)

150°C

Surface Mount

6-SMD, No Lead

6-CSP (2.15x1.66)

SIL2301-TP

Micro Commercial Co

MOSFET 2P-CH 20V 2.3A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

封裝: -

庫存72,087

-

20V

2.3A

90mOhm @ 2.5A, 4.5V

1V @ 250µA

10nC @ 4.5V

405pF @ 10V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

SQJ992EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 15A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存23,757

-

60V

15A (Tc)

56.2mOhm @ 3.7A, 10V

2.5V @ 250µA

12nC @ 10V

446pF @ 30V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJ956EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 23A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存27,003

-

60V

23A (Tc)

26.7mOhm @ 5.2A, 10V

2.5V @ 250µA

30nC @ 10V

1395pF @ 30V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

TSM150NB04LDCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 8A/37A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V
Power - Max: 2W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封裝: -

庫存22,350

-

40V

8A (Ta), 37A (Tc)

15mOhm @ 8A, 10V

2.5V @ 250µA

18nC @ 10V

966pF @ 20V

2W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

MSCSM170HM23CT3AG

Microchip Technology

SIC 4N-CH 1700V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

Request a Quote

-

1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM70AM025CD3AG

Microchip Technology

SIC 700V 538A D3

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: D3

封裝: -

庫存12

-

700V

538A (Tc)

-

Chassis Mount

Module

D3

DMT35M8LDG-13

Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
Power - Max: 980mW (Ta), 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type G)

封裝: -

Request a Quote

-

30V

17A (Ta), 15.3A (Ta)

4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V

1.9V @ 250µA

22.7nC @ 10V, 16.3nC @ 10V

1510pF @ 15V, 1032pF @ 15V

980mW (Ta), 2W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type G)

SIL3724-TP

Micro Commercial Co

MOSFET N/P-CH 30V 5.8A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.1A
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, 700pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

封裝: -

Request a Quote

-

30V

5.8A, 4.1A

30mOhm @ 5.8A, 10V, 60mOhm @ 4.1A, 10V

2.5V @ 250µA, 2.2V @ 250µA

-

820pF @ 15V, 700pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L