頁 62 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
APTC60DDAM70CT1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封裝: SP1	庫存6,272	Super Junction	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SI5905BDC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 4A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存2,640	Logic Level Gate	8V	4A	80 mOhm @ 3.3A, 4.5V	1V @ 250µA	11nC @ 8V	350pF @ 4V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
BSL207NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.1A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP-6-1	封裝: SOT-23-6 Thin, TSOT-23-6	庫存5,392	Logic Level Gate, 2.5V Drive	20V	2.1A	70 mOhm @ 2.1A, 4.5V	1.2V @ 11µA	2.1nC @ 4.5V	419pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP-6-1
APTM120H140FT1G	Microsemi Corporation	MOSFET 4N-CH 1200V 8A SP1 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封裝: SP1	庫存3,216	Standard	1200V (1.2kV)	8A	1.68 Ohm @ 7A, 10V	5V @ 1mA	145nC @ 10V	3812pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
GMM3X60-015X2-SMD	IXYS	MOSFET 6N-CH 150V 50A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL? Supplier Device Package: ISOPLUS-DIL?	封裝: ISOPLUS-DIL?	庫存4,352	Standard	150V	50A	24 mOhm @ 38A, 10V	4.5V @ 1mA	97nC @ 10V	5800pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL?	ISOPLUS-DIL?
AON2803	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 3.8A 6DFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x2)	封裝: 6-WDFN Exposed Pad	庫存2,480	Logic Level Gate	20V	3.8A	70 mOhm @ 3.8A, 4.5V	1V @ 250µA	12nC @ 4.5V	560pF @ 10V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN-EP (2x2)
SIS990DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 12.1A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12.1A Rds On (Max) @ Id, Vgs: 85 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V Power - Max: 25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封裝: PowerPAK? 1212-8 Dual	庫存2,176	Standard	100V	12.1A	85 mOhm @ 8A, 10V	4V @ 250µA	8nC @ 10V	250pF @ 50V	25W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
DMNH6042SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 T&R 2 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power - Max: 2.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,472	Standard	60V	16.7A (Tc)	50 mOhm @ 5.1A, 10V	3V @ 250µA	4.2nC @ 4.5V	584pF @ 25V	2.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SH8KA4TB	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存26,928	-	30V	9A	21.4 mOhm @ 9A, 10V	2.5V @ 1mA	15.5nC @ 10V	640pF @ 15V	3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ZXMD63P03XTA	Diodes Incorporated	MOSFET 2P-CH 30V 8-MSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存180,384	Logic Level Gate	30V	-	185 mOhm @ 1.2A, 10V	1V @ 250µA (Min)	7nC @ 10V	270pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
DMN66D0LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.115A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存48,958,512	Logic Level Gate	60V	115mA	5 Ohm @ 115mA, 10V	2V @ 250µA	-	23pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
APTM50HM75STG	Microsemi Corporation	MOSFET 4N-CH 500V 46A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封裝: SP4	庫存6,016	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDMA3028N	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 3.8A 6MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封裝: 6-VDFN Exposed Pad	庫存435,192	Logic Level Gate	30V	3.8A	68 mOhm @ 3.8A, 4.5V	1.5V @ 250µA	5.2nC @ 5V	375pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
MSCSM170AM029T6LIAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
TQM250NB06DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/30A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V Power - Max: 2.5W (Ta), 58W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	封裝: -	庫存22,365	-	60V	6A (Ta), 30A (Tc)	25mOhm @ 6A, 10V	3.8V @ 250µA	24nC @ 10V	1398pF @ 30V	2.5W (Ta), 58W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	8-PDFNU (5x6)
UPA1970TE-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 20V 2.2A SC95-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Rds On (Max) @ Id, Vgs: 69mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V Power - Max: 1.15W Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-95-6 Supplier Device Package: SC-95-6, Mini Mold Thin	封裝: -	Request a Quote	Logic Level Gate	20V	2.2A	69mOhm @ 1A, 4.5V	1.5V @ 1mA	2.3nC @ 4V	160pF @ 10V	1.15W	-	Surface Mount	SC-95-6	SC-95-6, Mini Mold Thin
KFCAB21490LE	Nuvoton Technology Corporation	DUAL NCH MOSFET 12V, 13.5A, 2.2M FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V Power - Max: 540mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	封裝: -	Request a Quote	-	12V	13.5A (Ta)	2.75mOhm @ 6A, 4.5V	1.4V @ 1.11mA	25nC @ 4V	3570pF @ 10V	540mW (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
DMC2991UDA-7B	Diodes Incorporated	MOSFET N/P-CH 20V 0.48A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	封裝: -	庫存29,592	-	20V	480mA (Ta), 350mA (Ta)	990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V, 0.3nC @ 4.5V	21.5pF @ 16V, 17pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
PJQ2815_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 4.2A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	封裝: -	庫存23,310	-	20V	4.2A (Ta)	52mOhm @ 4.2A, 4.5V	900mV @ 250µA	24nC @ 4.5V	907pF @ 10V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
RFIS30P06	Harris Corporation	MOSFET P-CH 60V 30A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AOC3864	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XDFN Supplier Device Package: 6-DFN (2.7x1.8)	封裝: -	Request a Quote	-	-	-	-	1.3V @ 250µA	38nC @ 4.5V	-	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-XDFN	6-DFN (2.7x1.8)
SQ4917EY-T1_BE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	庫存66,990	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DI2A8N03PWK2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 15V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-QFN (2x2)	封裝: -	Request a Quote	-	30V	2.8A (Ta)	72mOhm @ 2A, 4.5V	1.2V @ 250µA	6.8nC @ 4.5V	387pF @ 15V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-QFN (2x2)
DMP22D5UDR4-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.36A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: X2-DFN1010-6 (Type UXC)	封裝: -	庫存13,977	-	20V	360mA (Ta)	1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.3nC @ 4.5V	17pF @ 16V	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	X2-DFN1010-6 (Type UXC)
SSM14N956L-EFF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 12V 20A TCSPED FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.57mA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.33W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 14-SMD, No Lead Supplier Device Package: TCSPED-302701	封裝: -	庫存29,565	-	12V	20A (Ta)	1.35mOhm @ 10A, 4.5V	1.4V @ 1.57mA	76nC @ 4V	-	1.33W (Ta)	150°C	Surface Mount	14-SMD, No Lead	TCSPED-302701
PJS6812_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 3.7A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封裝: -	庫存31,719	-	20V	3.7A (Ta)	56mOhm @ 3.7A, 4.5V	1.2V @ 250µA	4.57nC @ 4.5V	350pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
NVMJD027N06CLTWG	onsemi	MOSFET 2N-CH 60V 7.7A 8LFPAK FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 30V Power - Max: 3.2W (Ta), 24W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: 8-LFPAK	封裝: -	Request a Quote	-	60V	7.7A (Ta), 21A (Tc)	27mOhm @ 9A, 10V	2.2V @ 13µA	5nC @ 10V	335pF @ 30V	3.2W (Ta), 24W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	8-LFPAK
UPA1602GS-E1-A	Renesas	MOSFET 7N-CH 30V 0.43A 16SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 150mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF Power - Max: 1W (Ta) Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.220", 5.59mm Width) Supplier Device Package: 16-SOP	封裝: -	Request a Quote	-	30V	430mA (Ta)	5.3Ohm @ 150mA, 4.5V	1V @ 150mA	-	10pF	1W (Ta)	-40°C ~ 85°C	Surface Mount	16-SOIC (0.220", 5.59mm Width)	16-SOP

APTC60DDAM70CT1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封裝: SP1

庫存6,272

Super Junction

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

SI5905BDC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 4V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存2,640

Logic Level Gate

8V

4A

80 mOhm @ 3.3A, 4.5V

1V @ 250µA

11nC @ 8V

350pF @ 4V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

BSL207NH6327XTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.1A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP-6-1

封裝: SOT-23-6 Thin, TSOT-23-6

庫存5,392

Logic Level Gate, 2.5V Drive

20V

2.1A

70 mOhm @ 2.1A, 4.5V

1.2V @ 11µA

2.1nC @ 4.5V

419pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP-6-1

APTM120H140FT1G

Microsemi Corporation

MOSFET 4N-CH 1200V 8A SP1

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 1.68 Ohm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封裝: SP1

庫存3,216

Standard

1200V (1.2kV)

8A

1.68 Ohm @ 7A, 10V

5V @ 1mA

145nC @ 10V

3812pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

GMM3X60-015X2-SMD

IXYS

MOSFET 6N-CH 150V 50A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?

封裝: ISOPLUS-DIL?

庫存4,352

Standard

150V

50A

24 mOhm @ 38A, 10V

4.5V @ 1mA

97nC @ 10V

5800pF @ 25V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL?

AON2803

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3.8A 6DFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)

封裝: 6-WDFN Exposed Pad

庫存2,480

Logic Level Gate

20V

3.8A

70 mOhm @ 3.8A, 4.5V

1V @ 250µA

12nC @ 4.5V

560pF @ 10V

1.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN-EP (2x2)

SIS990DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 12.1A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Power - Max: 25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封裝: PowerPAK? 1212-8 Dual

庫存2,176

Standard

100V

12.1A

85 mOhm @ 8A, 10V

4V @ 250µA

8nC @ 10V

250pF @ 50V

25W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

DMNH6042SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,472

Standard

60V

16.7A (Tc)

50 mOhm @ 5.1A, 10V

3V @ 250µA

4.2nC @ 4.5V

584pF @ 25V

2.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SH8KA4TB

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 21.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存26,928

-

30V

9A

21.4 mOhm @ 9A, 10V

2.5V @ 1mA

15.5nC @ 10V

640pF @ 15V

3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ZXMD63P03XTA

Diodes Incorporated

MOSFET 2P-CH 30V 8-MSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存180,384

Logic Level Gate

30V

-

185 mOhm @ 1.2A, 10V

1V @ 250µA (Min)

7nC @ 10V

270pF @ 25V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

DMN66D0LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.115A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存48,958,512

Logic Level Gate

60V

115mA

5 Ohm @ 115mA, 10V

2V @ 250µA

-

23pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

APTM50HM75STG

Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封裝: SP4

庫存6,016

Standard

500V

46A

90 mOhm @ 23A, 10V

5V @ 2.5mA

123nC @ 10V

5600pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FDMA3028N

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.8A 6MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封裝: 6-VDFN Exposed Pad

庫存435,192

Logic Level Gate

30V

3.8A

68 mOhm @ 3.8A, 4.5V

1.5V @ 250µA

5.2nC @ 5V

375pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

MSCSM170AM029T6LIAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

TQM250NB06DCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/30A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1398pF @ 30V
Power - Max: 2.5W (Ta), 58W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

封裝: -

庫存22,365

-

60V

6A (Ta), 30A (Tc)

25mOhm @ 6A, 10V

3.8V @ 250µA

24nC @ 10V

1398pF @ 30V

2.5W (Ta), 58W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

8-PDFNU (5x6)

UPA1970TE-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 20V 2.2A SC95-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Rds On (Max) @ Id, Vgs: 69mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 10V
Power - Max: 1.15W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-95-6
Supplier Device Package: SC-95-6, Mini Mold Thin

封裝: -

Request a Quote

Logic Level Gate

20V

2.2A

69mOhm @ 1A, 4.5V

1.5V @ 1mA

2.3nC @ 4V

160pF @ 10V

1.15W

-

Surface Mount

SC-95-6

SC-95-6, Mini Mold Thin

KFCAB21490LE

Nuvoton Technology Corporation

DUAL NCH MOSFET 12V, 13.5A, 2.2M

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 10V
Power - Max: 540mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

封裝: -

Request a Quote

-

12V

13.5A (Ta)

2.75mOhm @ 6A, 4.5V

1.4V @ 1.11mA

25nC @ 4V

3570pF @ 10V

540mW (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

DMC2991UDA-7B

Diodes Incorporated

MOSFET N/P-CH 20V 0.48A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 350mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 16V, 17pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

封裝: -

庫存29,592

-

20V

480mA (Ta), 350mA (Ta)

990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V, 0.3nC @ 4.5V

21.5pF @ 16V, 17pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

PJQ2815_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 4.2A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 907pF @ 10V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6L

封裝: -

庫存23,310

-

20V

4.2A (Ta)

52mOhm @ 4.2A, 4.5V

900mV @ 250µA

24nC @ 4.5V

907pF @ 10V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6L

RFIS30P06

Harris Corporation

MOSFET P-CH 60V 30A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

AOC3864

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XDFN
Supplier Device Package: 6-DFN (2.7x1.8)

封裝: -

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-

1.3V @ 250µA

38nC @ 4.5V

-

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-XDFN

6-DFN (2.7x1.8)

SQ4917EY-T1_BE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

庫存66,990

-

60V

8A (Tc)

48mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DI2A8N03PWK2-AQ

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 387pF @ 15V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-QFN (2x2)

封裝: -

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-

30V

2.8A (Ta)

72mOhm @ 2A, 4.5V

1.2V @ 250µA

6.8nC @ 4.5V

387pF @ 15V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-QFN (2x2)

DMP22D5UDR4-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.36A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 16V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: X2-DFN1010-6 (Type UXC)

封裝: -

庫存13,977

-

20V

360mA (Ta)

1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.3nC @ 4.5V

17pF @ 16V

380mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

X2-DFN1010-6 (Type UXC)

SSM14N956L-EFF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.33W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 14-SMD, No Lead
Supplier Device Package: TCSPED-302701

封裝: -

庫存29,565

-

12V

20A (Ta)

1.35mOhm @ 10A, 4.5V

1.4V @ 1.57mA

76nC @ 4V

-

1.33W (Ta)

150°C

Surface Mount

14-SMD, No Lead

TCSPED-302701

PJS6812_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 3.7A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封裝: -

庫存31,719

-

20V

3.7A (Ta)

56mOhm @ 3.7A, 4.5V

1.2V @ 250µA

4.57nC @ 4.5V

350pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

NVMJD027N06CLTWG

onsemi

MOSFET 2N-CH 60V 7.7A 8LFPAK

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 30V
Power - Max: 3.2W (Ta), 24W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: 8-LFPAK

封裝: -

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-

60V

7.7A (Ta), 21A (Tc)

27mOhm @ 9A, 10V

2.2V @ 13µA

5nC @ 10V

335pF @ 30V

3.2W (Ta), 24W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

8-LFPAK

UPA1602GS-E1-A

Renesas

MOSFET 7N-CH 30V 0.43A 16SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF
Power - Max: 1W (Ta)
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.220", 5.59mm Width)
Supplier Device Package: 16-SOP

封裝: -

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-

30V

430mA (Ta)

5.3Ohm @ 150mA, 4.5V

1V @ 150mA

-

10pF

1W (Ta)

-40°C ~ 85°C

Surface Mount

16-SOIC (0.220", 5.59mm Width)

16-SOP