頁 185 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL314PEL6327HTSA1	Infineon Technologies	MOSFET 2P-CH 30V 1.5A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2V @ 6.3µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存6,848	Logic Level Gate	30V	1.5A	140 mOhm @ 1.5A, 10V	2V @ 6.3µA	2.9nC @ 10V	294pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
IRF7379	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存182,868	Standard	30V	5.8A, 4.3A	45 mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTM20DHM16TG	Microsemi Corporation	MOSFET 2N-CH 200V 104A SP4 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封裝: SP4	庫存4,016	Standard	200V	104A	19 mOhm @ 52A, 10V	5V @ 2.5mA	140nC @ 10V	7220pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
IRFHM792TRPBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	封裝: 8-PowerVDFN	庫存167,280	Standard	100V	2.3A	195 mOhm @ 2.9A, 10V	4V @ 10µA	6.3nC @ 10V	251pF @ 25V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (3.3x3.3), Power33
APTMC60TLM14CAG	Microsemi Corporation	MOSFET 4N-CH 1200V 219A SP6C FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 219A Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V Power - Max: 925W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封裝: SP6	庫存6,992	Standard	1200V (1.2kV)	219A	12 mOhm @ 150A, 20V	2.4V @ 30mA (Typ)	483nC @ 20V	8400pF @ 1000V	925W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC80TDU15PG	Microsemi Corporation	MOSFET 6N-CH 800V 28A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封裝: SP6	庫存7,952	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SI8900EDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 20V 5.4A 10-MFP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-UFBGA, CSPBGA Supplier Device Package: 10-Micro Foot? CSP (2x5)	封裝: 10-UFBGA, CSPBGA	庫存8,088	Logic Level Gate	20V	5.4A	-	1V @ 1.1mA	-	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	10-UFBGA, CSPBGA	10-Micro Foot? CSP (2x5)
QS8J12TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 4.5A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: 8-SMD, Flat Lead	庫存4,912	Logic Level Gate, 1.5V Drive	12V	4.5A	29 mOhm @ 4.5A, 4.5V	1V @ 1mA	40nC @ 4.5V	4200pF @ 6V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
SI4214DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存466,284	Standard	30V	8.5A	23.5 mOhm @ 7A, 10V	2.5V @ 250µA	23nC @ 10V	785pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002DW-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.115A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存6,256	Standard	60V	115mA	7.5 Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ALD1102SAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8SOIC FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,368	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IPG20N04S4L11AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封裝: 8-PowerVDFN	庫存6,416	Logic Level Gate	40V	20A	11.6 mOhm @ 17A, 10V	2.2V @ 15µA	26nC @ 10V	1990pF @ 25V	41W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
SP8K2TB	Rohm Semiconductor	MOSFET 2N-CH 30V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存1,159,248	Logic Level Gate	30V	6A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF7902TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存219,264	Logic Level Gate	30V	6.4A, 9.7A	22.6 mOhm @ 6.4A, 10V	2.25V @ 25µA	6.9nC @ 4.5V	580pF @ 15V	1.4W, 2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FC6546010R	Panasonic Electronic Components	MOSFET 2N-CH 60V 0.1A SMINI6-F3 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	封裝: 6-SMD, Flat Leads	庫存24,312	Logic Level Gate	60V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	150mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
SI4931DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 6.7A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.7A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存246,120	Logic Level Gate	12V	6.7A	18 mOhm @ 8.9A, 4.5V	1V @ 350µA	52nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF9910TRPBF-1	Infineon Technologies	MOSFET 2N-CH 20V 10A/12A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta) Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	-	20V	10A (Ta), 12A (Ta)	13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V	2.55V @ 250µA	11nC @ 4.5V, 23nC @ 4.5V	900pF @ 10V, 1860pF @ 10V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRLHS6376TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 3.6A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	封裝: -	Request a Quote	Logic Level Gate	30V	3.6A	63mOhm @ 3.4A, 4.5V	1.1V @ 10µA	2.8nC @ 4.5V	270pF @ 25V	1.5W	-	Surface Mount	6-VDFN Exposed Pad	6-PQFN (2x2)
RF1S530SM9AS2457	Harris Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN52D0UVQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDG6304P-X	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMG1016UDWQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 1.066A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V Power - Max: 330mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	庫存18,000	-	20V	1.066A (Ta), 845mA (Ta)	450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V	1V @ 250µA	736.6nC @ 4.5V, 0.62nC @ 4.5V	60.67pF @ 10V, 59.76pF @ 16V	330mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC3032LFDB-7	Diodes Incorporated	MOSFET N/P-CH 30V 5.3A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封裝: -	Request a Quote	-	30V	5.3A (Ta), 3.4A (Ta)	30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V	2V @ 250µA, 2.1V @ 250µA	10.6nC @ 10V, 7.8nC @ 10V	500pF @ 15V, 336pF @ 25V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
PJS6601_S2_00001	Panjit International Inc.	MOSFET N/P-CH 20V 4.1A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封裝: -	Request a Quote	-	20V	4.1A (Ta), 3.1A (Ta)	56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V	1.2V @ 250µA	4.6nC @ 4.5V, 5.4nC @ 4.5V	350pF @ 10V, 416pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
DMT3022UEV-13	Diodes Incorporated	MOSFET 2N-CH 30V 17A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXD)	封裝: -	Request a Quote	-	30V	17A (Tc)	22mOhm @ 11A, 10V	1.8V @ 250µA	13.9nC @ 10V	903pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXD)
DMT6015LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.4A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V Power - Max: 2.4W (Ta), 7.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封裝: -	Request a Quote	-	60V	9.4A (Ta), 17.1A (Tc)	18mOhm @ 10A, 10V	2.5V @ 250µA	15.7nC @ 10V	808pF @ 30V	2.4W (Ta), 7.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMN3061SVT-7	Diodes Incorporated	MOSFET 2N-CH 30V 3.4A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Power - Max: 1.08W (Ta) Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封裝: -	Request a Quote	-	30V	3.4A (Ta)	-	-	6.6nC @ 10V	278pF @ 15V	1.08W (Ta)	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
AOCA36102E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 22V 30A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (3.4x1.96)	封裝: -	Request a Quote	-	22V	30A	2.8mOhm @ 5A, 4.5V	1.25V @ 250µA	37nC @ 4.5V	-	3.1W	-55°C ~ 150°C	Surface Mount	10-SMD, No Lead	10-AlphaDFN (3.4x1.96)

BSL314PEL6327HTSA1

Infineon Technologies

MOSFET 2P-CH 30V 1.5A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 6.3µA
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存6,848

Logic Level Gate

30V

1.5A

140 mOhm @ 1.5A, 10V

2V @ 6.3µA

2.9nC @ 10V

294pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

IRF7379

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存182,868

Standard

30V

5.8A, 4.3A

45 mOhm @ 5.8A, 10V

1V @ 250µA

25nC @ 10V

520pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

APTM20DHM16TG

Microsemi Corporation

MOSFET 2N-CH 200V 104A SP4

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封裝: SP4

庫存4,016

Standard

200V

104A

19 mOhm @ 52A, 10V

5V @ 2.5mA

140nC @ 10V

7220pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

封裝: 8-PowerVDFN

庫存167,280

Standard

100V

2.3A

195 mOhm @ 2.9A, 10V

4V @ 10µA

6.3nC @ 10V

251pF @ 25V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PQFN (3.3x3.3), Power33

APTMC60TLM14CAG

Microsemi Corporation

MOSFET 4N-CH 1200V 219A SP6C

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 219A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封裝: SP6

庫存6,992

Standard

1200V (1.2kV)

219A

12 mOhm @ 150A, 20V

2.4V @ 30mA (Typ)

483nC @ 20V

8400pF @ 1000V

925W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC80TDU15PG

Microsemi Corporation

MOSFET 6N-CH 800V 28A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封裝: SP6

庫存7,952

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

SI8900EDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 20V 5.4A 10-MFP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, CSPBGA
Supplier Device Package: 10-Micro Foot? CSP (2x5)

封裝: 10-UFBGA, CSPBGA

庫存8,088

Logic Level Gate

20V

5.4A

-

1V @ 1.1mA

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

10-UFBGA, CSPBGA

10-Micro Foot? CSP (2x5)

QS8J12TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 4.5A TSMT8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 6V
Power - Max: 550mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: 8-SMD, Flat Lead

庫存4,912

Logic Level Gate, 1.5V Drive

12V

4.5A

29 mOhm @ 4.5A, 4.5V

1V @ 1mA

40nC @ 4.5V

4200pF @ 6V

550mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

SI4214DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存466,284

Standard

30V

8.5A

23.5 mOhm @ 7A, 10V

2.5V @ 250µA

23nC @ 10V

785pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002DW-TP

Micro Commercial Co

MOSFET 2N-CH 60V 0.115A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存6,256

Standard

60V

115mA

7.5 Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ALD1102SAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8SOIC

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,368

Standard

10.6V

-

270 Ohm @ 5V

1.2V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IPG20N04S4L11AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Power - Max: 41W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封裝: 8-PowerVDFN

庫存6,416

Logic Level Gate

40V

20A

11.6 mOhm @ 17A, 10V

2.2V @ 15µA

26nC @ 10V

1990pF @ 25V

41W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

SP8K2TB

Rohm Semiconductor

MOSFET 2N-CH 30V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存1,159,248

Logic Level Gate

30V

6A

30 mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF7902TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A
Rds On (Max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存219,264

Logic Level Gate

30V

6.4A, 9.7A

22.6 mOhm @ 6.4A, 10V

2.25V @ 25µA

6.9nC @ 4.5V

580pF @ 15V

1.4W, 2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FC6546010R

Panasonic Electronic Components

MOSFET 2N-CH 60V 0.1A SMINI6-F3

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

封裝: 6-SMD, Flat Leads

庫存24,312

Logic Level Gate

60V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

150mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

SI4931DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 6.7A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.7A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存246,120

Logic Level Gate

12V

6.7A

18 mOhm @ 8.9A, 4.5V

1V @ 350µA

52nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF9910TRPBF-1

Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Ta)
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, 1860pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

Request a Quote

-

20V

10A (Ta), 12A (Ta)

13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V

2.55V @ 250µA

11nC @ 4.5V, 23nC @ 4.5V

900pF @ 10V, 1860pF @ 10V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRLHS6376TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Power - Max: 1.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-PQFN (2x2)

封裝: -

Request a Quote

Logic Level Gate

30V

3.6A

63mOhm @ 3.4A, 4.5V

1.1V @ 10µA

2.8nC @ 4.5V

270pF @ 25V

1.5W

-

Surface Mount

6-VDFN Exposed Pad

6-PQFN (2x2)

RF1S530SM9AS2457

Harris Corporation

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

DMN52D0UVQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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-

50V

480mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDG6304P-X

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

DMG1016UDWQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 1.066A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V
Power - Max: 330mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

庫存18,000

-

20V

1.066A (Ta), 845mA (Ta)

450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

1V @ 250µA

736.6nC @ 4.5V, 0.62nC @ 4.5V

60.67pF @ 10V, 59.76pF @ 16V

330mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC3032LFDB-7

Diodes Incorporated

MOSFET N/P-CH 30V 5.3A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封裝: -

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-

30V

5.3A (Ta), 3.4A (Ta)

30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V

2V @ 250µA, 2.1V @ 250µA

10.6nC @ 10V, 7.8nC @ 10V

500pF @ 15V, 336pF @ 25V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

PJS6601_S2_00001

Panjit International Inc.

MOSFET N/P-CH 20V 4.1A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V, 416pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封裝: -

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-

20V

4.1A (Ta), 3.1A (Ta)

56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V

1.2V @ 250µA

4.6nC @ 4.5V, 5.4nC @ 4.5V

350pF @ 10V, 416pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

DMT3022UEV-13

Diodes Incorporated

MOSFET 2N-CH 30V 17A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 903pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXD)

封裝: -

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-

30V

17A (Tc)

22mOhm @ 11A, 10V

1.8V @ 250µA

13.9nC @ 10V

903pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXD)

DMT6015LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 17.1A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
Power - Max: 2.4W (Ta), 7.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封裝: -

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-

60V

9.4A (Ta), 17.1A (Tc)

18mOhm @ 10A, 10V

2.5V @ 250µA

15.7nC @ 10V

808pF @ 30V

2.4W (Ta), 7.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMN3061SVT-7

Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Power - Max: 1.08W (Ta)
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封裝: -

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-

30V

3.4A (Ta)

-

6.6nC @ 10V

278pF @ 15V

1.08W (Ta)

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

AOCA36102E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 22V 30A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (3.4x1.96)

封裝: -

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-

22V

30A

2.8mOhm @ 5A, 4.5V

1.25V @ 250µA

37nC @ 4.5V

-

3.1W

-55°C ~ 150°C

Surface Mount

10-SMD, No Lead

10-AlphaDFN (3.4x1.96)