電晶體 - FET、MOSFET - 陣列

FW276-TL-2H

ON Semiconductor

MOSFET 2N-CH 450V 0.7A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 700mA
• Rds On (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 20V
• Power - Max: 1.6W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

2N7002DWA-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 180mA
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 115mA, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

EFC4618R-TR

ON Semiconductor

MOSFET 2N-CH EFCP1818

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.6W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XBGA, 4-FCBGA
• Supplier Device Package: EFCP1818-4CC-037

封裝: 4-XBGA, 4-FCBGA

SI4923DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.2A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

TPCF8304(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 3.2A VS-8

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.2A
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 1.6A, 10V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 330mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: VS-8 (2.9x1.5)

封裝: 8-SMD, Flat Lead

NTMD6P02R2SG

ON Semiconductor

MOSFET 2P-CH 20V 4.8A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.8A
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 16V
• Power - Max: 750mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

FDW2512NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 6A 8-TSSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
• Power - Max: 1.6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

PMWD19UN,518

NXP

MOSFET 2N-CH 30V 5.6A 8TSSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.6A
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1478pF @ 10V
• Power - Max: 2.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

APTML602U12R020T3AG

Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 45A
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
• Vgs(th) (Max) @ Id: 4V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
• Power - Max: 568W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Supplier Device Package: SP3

封裝: SP3

SQJ951EP-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 30V 30A PPAK

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
• Power - Max: 56W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SO-8 Dual
• Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

BUK7K8R7-40EX

Nexperia USA Inc.

MOSFET 2N-CH 40V 30A 56LFPAK

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 21.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1439pF @ 25V
• Power - Max: 53W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-1205, 8-LFPAK56
• Supplier Device Package: LFPAK56D

封裝: SOT-1205, 8-LFPAK56

SP8K5FU6TB

Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A 8SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A
• Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

TSM6963SDCA RVG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

• FET Type: 2 P-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 5V
• Power - Max: 1.14W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

ALD310704SCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

• FET Type: 4 P-Channel, Matched Pair
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 380mV @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
• Power - Max: 500mW
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

SI4830CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

DMT3009LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

• FET Type: 2 N-Channel (Dual) Asymmetrical
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A
• Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
• Power - Max: 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: V-DFN3030-8 (Type K)

封裝: 8-VDFN Exposed Pad

DMG9926UDM-7

Diodes Incorporated

MOSFET 2N-CH 20V 4.2A SOT-26

• FET Type: 2 N-Channel (Dual) Common Drain
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 8.2A, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 10V
• Power - Max: 980mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

封裝: SOT-23-6

EM6M2T2R

Rohm Semiconductor

MOSFET N/P-CH 20V 0.2A EMT6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 200mA
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 200mA, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: EMT6

封裝: SOT-563, SOT-666

G220P03D32

Goford Semiconductor

MOSFET P+P-CH 30V12A 30W DFN3*3-

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
• Power - Max: 30W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (3.15x3.05) Dual

封裝: -

SSM5P15FU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 0.1A USV

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
• Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id: 1.7V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
• Power - Max: 200mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: USV

封裝: -

SCH2817-TL-E

onsemi

NCH+SBD 1.8V DRIVE SERIES

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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CMS25NN03V8-HF

Comchip Technology

MOSFET 2N-CH 30V 25A 8DFN

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 25A
• Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 15V
• Power - Max: 1.7W (Ta), 20.8W (Tc)
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: 8-PDFN (SPR-PAK ) (3.3x3.3)

封裝: -

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SSM6P35AFU-LF

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate, 1.2V Drive
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
• Power - Max: 285mW (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封裝: -

SIA907EDJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V SMD

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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DMT35M8LDG-7

Diodes Incorporated

MOSFET 2N-CH 30V 17A PWRDI3333

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta)
• Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
• Vgs(th) (Max) @ Id: 1.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V
• Power - Max: 980mW (Ta), 2W (Tc)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PowerDI3333-8 (Type G)

封裝: -

FF4MR20KM1HPHPSA1

Infineon Technologies

SIC 2N-CH 2000V AG-62MMHB

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 2000V (2kV)
• Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
• Rds On (Max) @ Id, Vgs: 5.3mOhm @ 300A, 18V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1170nC @ 18V
• Input Capacitance (Ciss) (Max) @ Vds: 36100pF @ 1.2kV
• Power - Max: -
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MMHB

封裝: -

DMN31D5UDJ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT963

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
• Power - Max: 350mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Supplier Device Package: SOT-963

封裝: -

MMFTN620KDW

Diotec Semiconductor

MOSFET SOT363 N+N 60V 0.35A 2OHM

• FET Type: -
• FET Feature: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: 350mA
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: SOT-363

封裝: -

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