頁 122 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EFC6618R-A-TF	ON Semiconductor	MOSFET 2N-CH EFCP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,344	-	-	-	-	-	-	-	-	-	-	-	-
AON4605_001	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 4.3A/3.4A 8DFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x2)	封裝: 8-SMD, Flat Lead	庫存3,584	Logic Level Gate	30V	4.3A, 3.4A	50 mOhm @ 4.3A, 10V	2.5V @ 250µA	5nC @ 10V	210pF @ 15V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x2)
EMH2407-S-TL-HX	ON Semiconductor	MOSFET 2N-CH 20V 6A EMH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	封裝: 8-SMD, Flat Lead	庫存6,320	-	-	-	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	8-EMH
SI5513DC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存4,752	Logic Level Gate	20V	3.1A, 2.1A	75 mOhm @ 3.1A, 4.5V	1.5V @ 250µA	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI1016X-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V SOT563F FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封裝: SOT-563, SOT-666	庫存1,431,360	Logic Level Gate	20V	485mA, 370mA	700 mOhm @ 600mA, 4.5V	1V @ 250µA	0.75nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
SP8J1TB	Rohm Semiconductor	MOSFET 2P-CH 30V 5A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存381,144	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	16nC @ 5V	1400pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
VMM300-03F	IXYS	MOSFET 2N-CH 300V 290A Y3-DCB FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 290A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 145A, 10V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1500W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	封裝: Y3-DCB	庫存2,768	Standard	300V	290A	8.6 mOhm @ 145A, 10V	4V @ 30mA	1440nC @ 10V	40000pF @ 25V	1500W	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-DCB	Y3-DCB
ALD212908SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 0.08A 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,200	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SP8K3FU6TB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存19,476	Logic Level Gate	30V	7A	24 mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
AON2810	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 2A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 44 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	封裝: 6-WDFN Exposed Pad	庫存6,048	Logic Level Gate	30V	2A	44 mOhm @ 2A, 10V	1.4V @ 250µA	10nC @ 10V	235pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-DFN (2x2)
PMDPB80XP,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 2.7A HUSON6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 485mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封裝: 6-UDFN Exposed Pad	庫存7,984	Logic Level Gate, 1.8V Drive	20V	2.7A	102 mOhm @ 2.7A, 4.5V	1V @ 250µA	8.6nC @ 4.5V	550pF @ 10V	485mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 0.4A/0.2A US6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,728	Logic Level Gate	30V	400mA, 200mA	700 mOhm @ 200MA, 10V	1.8V @ 100µA	-	20pF @ 5V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
NX138AKSX	Nexperia USA Inc.	NX138AKS/SC-88/REEL 7" Q1/T1 * FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V Power - Max: 325mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,184	Standard	60V	170mA (Ta)	4.5 Ohm @ 170mA, 10V	1.5V @ 250µA	1.4nC @ 10V	20pF @ 30V	325mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SMA5125	Sanken	MOSFET 3N/3P-CH 60V 10A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	封裝: 12-SIP, Exposed Tab	庫存22,896	Standard	60V	10A	140 mOhm @ 5A, 4V	2V @ 250µA	-	460pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
FDC6327C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V SSOT-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存476,724	Logic Level Gate	20V	2.7A, 1.9A	80 mOhm @ 2.7A, 4.5V	1.5V @ 250µA	4.5nC @ 4.5V	325pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
NTMFD016N06CT1G	onsemi	MOSFET 2N-CH 60V 9A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Power - Max: 3.1W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	庫存4,320	-	60V	9A (Ta), 32A (Tc)	16.3mOhm @ 5A, 10V	4V @ 25µA	6.9nC @ 10V	489pF @ 30V	3.1W (Ta), 36W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTLMS4504NR2	onsemi	MOSFET N-CH 24V 28A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQJB80EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 80V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封裝: -	庫存8,820	-	80V	30A (Tc)	19mOhm @ 8A, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
FF6MR12KM1HHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存60	-	-	-	-	-	-	-	-	-	-	-	-
NTND31225CZTAG	onsemi	MOSFET N/P-CH 20V 0.22A 6XLLGA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V Power - Max: 125mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-XLLGA (0.9x0.65)	封裝: -	Request a Quote	-	20V	220mA (Ta), 127mA (Ta)	1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.3pF @ 15V, 12.8pF @ 15V	125mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA	6-XLLGA (0.9x0.65)
SI8902AEDB-T2-E1	Vishay Siliconix	MOSFET 2N-CH 24V 11A 6MICRO FOOT FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFBGA Supplier Device Package: 6-Micro Foot™ (1.5x1)	封裝: -	Request a Quote	-	24V	11A	28mOhm @ 1A, 4.5V	900mV @ 250µA	-	-	5.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFBGA	6-Micro Foot™ (1.5x1)
PMDXB290UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.93A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Power - Max: 280mW (Ta), 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	封裝: -	庫存6,045	-	20V	930mA (Ta), 3.5A (Tc)	320mOhm @ 1.2A, 4.5V	1V @ 250µA	0.9nC @ 4.5V	43.6pF @ 10V	280mW (Ta), 6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
CMSBN4616-HF	Comchip Technology	MOSFET 2N-CH 8A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: CSPB1515-4	封裝: -	Request a Quote	-	-	8A (Ta)	18mOhm @ 3A, 4.5V	1.3V @ 250µA	8.8nC @ 4.5V	-	1.5W (Ta)	150°C	Surface Mount	4-SMD, No Lead	CSPB1515-4
SISF06DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 28A PPAK 1212-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V Power - Max: 5.2W (Ta), 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD	封裝: -	庫存34,188	-	30V	28A (Ta), 101A (Tc)	4.5mOhm @ 7A, 10V	2.3V @ 250µA	45nC @ 10V	2050pF @ 15V	5.2W (Ta), 69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD	PowerPAK® 1212-8SCD
SH8JC5TB1	Rohm Semiconductor	MOSFET 2P-CH 60V 7.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存20,205	-	60V	7.5A (Ta)	32mOhm @ 7.5A, 10V	2.5V @ 1mA	50nC @ 10V	2630pF @ 30V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSM250D17P2E004	Rohm Semiconductor	SIC 2N-CH 1700V 250A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 66mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Power - Max: 1800W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	庫存102	-	1700V (1.7kV)	250A (Tc)	-	4V @ 66mA	-	30000pF @ 10V	1800W (Tc)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
FS45MR12W1M1B11BOMA1	Infineon Technologies	SIC 6N-CH 1200V AG-EASY1BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	封裝: -	庫存318	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V (Typ)	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
DMN3013LDG-7	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2.16W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	封裝: -	Request a Quote	-	30V	9.5A (Ta), 15A (Tc)	14.3mOhm @ 4A, 8V	1.2V @ 250µA	5.7nC @ 4.5V	600pF @ 15V	2.16W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)

EFC6618R-A-TF

ON Semiconductor

MOSFET 2N-CH EFCP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,344

-

AON4605_001

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 4.3A/3.4A 8DFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x2)

封裝: 8-SMD, Flat Lead

庫存3,584

Logic Level Gate

30V

4.3A, 3.4A

50 mOhm @ 4.3A, 10V

2.5V @ 250µA

5nC @ 10V

210pF @ 15V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x2)

EMH2407-S-TL-HX

ON Semiconductor

MOSFET 2N-CH 20V 6A EMH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

封裝: 8-SMD, Flat Lead

庫存6,320

-

Surface Mount

8-SMD, Flat Lead

8-EMH

SI5513DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 3.1A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存4,752

Logic Level Gate

20V

3.1A, 2.1A

75 mOhm @ 3.1A, 4.5V

1.5V @ 250µA

6nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI1016X-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封裝: SOT-563, SOT-666

庫存1,431,360

Logic Level Gate

20V

485mA, 370mA

700 mOhm @ 600mA, 4.5V

1V @ 250µA

0.75nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

SP8J1TB

Rohm Semiconductor

MOSFET 2P-CH 30V 5A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存381,144

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

16nC @ 5V

1400pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

VMM300-03F

IXYS

MOSFET 2N-CH 300V 290A Y3-DCB

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 290A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 145A, 10V
Vgs(th) (Max) @ Id: 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1500W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Supplier Device Package: Y3-DCB

封裝: Y3-DCB

庫存2,768

Standard

300V

290A

8.6 mOhm @ 145A, 10V

4V @ 30mA

1440nC @ 10V

40000pF @ 25V

1500W

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-DCB

ALD212908SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,200

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SP8K3FU6TB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存19,476

Logic Level Gate

30V

7A

24 mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

AON2810

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 2A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)

封裝: 6-WDFN Exposed Pad

庫存6,048

Logic Level Gate

30V

2A

44 mOhm @ 2A, 10V

1.4V @ 250µA

10nC @ 10V

235pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-DFN (2x2)

PMDPB80XP,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 2.7A HUSON6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 485mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封裝: 6-UDFN Exposed Pad

庫存7,984

Logic Level Gate, 1.8V Drive

20V

2.7A

102 mOhm @ 2.7A, 4.5V

1V @ 250µA

8.6nC @ 4.5V

550pF @ 10V

485mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 0.4A/0.2A US6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Rds On (Max) @ Id, Vgs: 700 mOhm @ 200MA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,728

Logic Level Gate

30V

400mA, 200mA

700 mOhm @ 200MA, 10V

1.8V @ 100µA

-

20pF @ 5V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

NX138AKSX

Nexperia USA Inc.

NX138AKS/SC-88/REEL 7" Q1/T1 *

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Power - Max: 325mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,184

Standard

60V

170mA (Ta)

4.5 Ohm @ 170mA, 10V

1.5V @ 250µA

1.4nC @ 10V

20pF @ 30V

325mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SMA5125

Sanken

MOSFET 3N/3P-CH 60V 10A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 5A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Power - Max: 4W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

封裝: 12-SIP, Exposed Tab

庫存22,896

Standard

60V

10A

140 mOhm @ 5A, 4V

2V @ 250µA

-

460pF @ 10V

4W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

FDC6327C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V SSOT-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A, 1.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存476,724

Logic Level Gate

20V

2.7A, 1.9A

80 mOhm @ 2.7A, 4.5V

1.5V @ 250µA

4.5nC @ 4.5V

325pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

NTMFD016N06CT1G

onsemi

MOSFET 2N-CH 60V 9A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Power - Max: 3.1W (Ta), 36W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

庫存4,320

-

60V

9A (Ta), 32A (Tc)

16.3mOhm @ 5A, 10V

4V @ 25µA

6.9nC @ 10V

489pF @ 30V

3.1W (Ta), 36W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NTLMS4504NR2

onsemi

MOSFET N-CH 24V 28A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SQJB80EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 80V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封裝: -

庫存8,820

-

80V

30A (Tc)

19mOhm @ 8A, 10V

2.5V @ 250µA

32nC @ 10V

1400pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

FF6MR12KM1HHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存60

-

NTND31225CZTAG

onsemi

MOSFET N/P-CH 20V 0.22A 6XLLGA

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta), 127mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V, 12.8pF @ 15V
Power - Max: 125mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Supplier Device Package: 6-XLLGA (0.9x0.65)

封裝: -

Request a Quote

-

20V

220mA (Ta), 127mA (Ta)

1.5Ohm @ 100mA, 4.5V, 5Ohm @ 100mA, 4.5V

1V @ 250µA

-

12.3pF @ 15V, 12.8pF @ 15V

125mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFLGA

6-XLLGA (0.9x0.65)

SI8902AEDB-T2-E1

Vishay Siliconix

MOSFET 2N-CH 24V 11A 6MICRO FOOT

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Supplier Device Package: 6-Micro Foot™ (1.5x1)

封裝: -

Request a Quote

-

24V

11A

28mOhm @ 1A, 4.5V

900mV @ 250µA

-

5.7W

-55°C ~ 150°C (TJ)

Surface Mount

6-UFBGA

6-Micro Foot™ (1.5x1)

PMDXB290UNEZ

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.93A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Power - Max: 280mW (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

封裝: -

庫存6,045

-

20V

930mA (Ta), 3.5A (Tc)

320mOhm @ 1.2A, 4.5V

1V @ 250µA

0.9nC @ 4.5V

43.6pF @ 10V

280mW (Ta), 6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

CMSBN4616-HF

Comchip Technology

MOSFET 2N-CH 8A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: CSPB1515-4

封裝: -

Request a Quote

-

8A (Ta)

18mOhm @ 3A, 4.5V

1.3V @ 250µA

8.8nC @ 4.5V

-

1.5W (Ta)

150°C

Surface Mount

4-SMD, No Lead

CSPB1515-4

SISF06DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 28A PPAK 1212-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD

封裝: -

庫存34,188

-

30V

28A (Ta), 101A (Tc)

4.5mOhm @ 7A, 10V

2.3V @ 250µA

45nC @ 10V

2050pF @ 15V

5.2W (Ta), 69.4W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8SCD

SH8JC5TB1

Rohm Semiconductor

MOSFET 2P-CH 60V 7.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 30V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存20,205

-

60V

7.5A (Ta)

32mOhm @ 7.5A, 10V

2.5V @ 1mA

50nC @ 10V

2630pF @ 30V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSM250D17P2E004

Rohm Semiconductor

SIC 2N-CH 1700V 250A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 66mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Power - Max: 1800W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

庫存102

-

1700V (1.7kV)

250A (Tc)

-

4V @ 66mA

-

30000pF @ 10V

1800W (Tc)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

FS45MR12W1M1B11BOMA1

Infineon Technologies

SIC 6N-CH 1200V AG-EASY1BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1BM-2

封裝: -

庫存318

-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V (Typ)

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1BM-2

DMN3013LDG-7

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2.16W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

封裝: -

Request a Quote

-

30V

9.5A (Ta), 15A (Tc)

14.3mOhm @ 4A, 8V

1.2V @ 250µA

5.7nC @ 4.5V

600pF @ 15V

2.16W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)