頁 120 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FW217A-TL-2WX	ON Semiconductor	MOSFET N-CH 35V 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,768	-	-	-	-	-	-	-	-	-	-	-	-
MP6K11TCR	Rohm Semiconductor	MOSFET 2N-CH 30V 3.5A MPT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: MPT6	封裝: 6-SMD, Flat Leads	庫存2,912	Logic Level Gate	30V	3.5A	98 mOhm @ 3.5A, 10V	2.5V @ 1mA	1.9nC @ 5V	85pF @ 10V	2W	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	MPT6
APTJC120AM13VCT1AG	Microsemi Corporation	MOSFET SIC PHASE LEG MODULE FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: Module	庫存5,008	-	-	-	-	-	-	-	-	-	Chassis Mount	Module	Module
APTM50AM70FT1G	Microsemi Corporation	MOSFET 2N-CH 500V 50A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封裝: SP1	庫存2,640	Standard	500V	50A	84 mOhm @ 42A, 10V	5V @ 2.5mA	340nC @ 10V	10800pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
AOP607	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 60V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存2,563,296	Logic Level Gate	60V	-	56 mOhm @ 4.7A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2.5W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SI1913EDH-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.88A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 450mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 570mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封裝: 6-TSSOP, SC-88, SOT-363	庫存78,300	Logic Level Gate	20V	880mA	490 mOhm @ 880mA, 4.5V	450mV @ 100µA	1.8nC @ 4.5V	-	570mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
ZXMD63P02XTC	Diodes Incorporated	MOSFET 2P-CH 20V 8MSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	庫存30,012	Logic Level Gate	20V	-	270 mOhm @ 1.2A, 4.5V	700mV @ 250µA (Min)	5.25nC @ 4.5V	290pF @ 15V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
NTND31015NZTAG	ON Semiconductor	MOSFET 2N-CH 20V 0.2A XLLGA6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V Power - Max: 125mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFLGA Supplier Device Package: 6-XLLGA (.90x.65)	封裝: 6-XFLGA	庫存4,864	Standard	20V	200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	-	12.3pF @ 15V	125mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFLGA	6-XLLGA (.90x.65)
TSM4953DCS RLG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -30V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,712	Standard	30V	4.9A (Ta)	60 mOhm @ 4.9A, 10V	3V @ 250µA	28nC @ 10V	745pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NX3008CBKS,115	Nexperia USA Inc.	MOSFET N/P-CH 30V 6TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 445mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存5,152	Logic Level Gate	30V	350mA, 200mA	1.4 Ohm @ 350mA, 4.5V	1.1V @ 250µA	0.68nC @ 4.5V	50pF @ 15V	445mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
IRF7328TRPBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存52,620	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.5V @ 250µA	78nC @ 10V	2675pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5515CDC-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存12,288	Logic Level Gate	20V	4A	36 mOhm @ 6A, 4.5V	800mV @ 250µA	11.3nC @ 5V	632pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
FDD3510H	Fairchild/ON Semiconductor	MOSFET N/P-CH 80V 4.3A/2.8A DPAK FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD	庫存36,264	Logic Level Gate	80V	4.3A, 2.8A	80 mOhm @ 4.3A, 10V	4V @ 250µA	18nC @ 10V	800pF @ 40V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
TC6321T-V/9U	Microchip Technology	MOSFET ARRAY N/P-CH 200V 8VDFN FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x5)	封裝: 8-VDFN Exposed Pad	庫存31,644	Logic Level Gate	200V	2A (Ta)	7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V	2V @ 1mA, 2.4V @ 1mA	-	110pF @ 25V, 200pF @ 25V	-	-55°C ~ 175°C	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x5)
EPC2107	EPC	MOSFET 3N-CH 100V 9BGA FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-VFBGA Supplier Device Package: 9-BGA (1.35x1.35)	封裝: 9-VFBGA	庫存201,390	GaNFET (Gallium Nitride)	100V	1.7A, 500mA	320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V	2.5V @ 100µA, 2.5V @ 20µA	0.16nC @ 5V, 0.044nC @ 5V	16pF @ 50V, 7pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	9-VFBGA	9-BGA (1.35x1.35)
CSD85301Q2T	Texas Instruments	MOSFET 2N-CH 20V 5A 6WSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WSON (2x2)	封裝: 6-WDFN Exposed Pad	庫存25,848	Logic Level Gate, 5V Drive	20V	5A	27 mOhm @ 5A, 4.5V	1.2V @ 250µA	5.4nC @ 4.5V	469pF @ 10V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WSON (2x2)
DMN2005DLP4K-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.3A 6-DFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 900mV @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 400mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN1310-6	封裝: 6-SMD, No Lead	庫存470,640	Standard	20V	300mA	1.5 Ohm @ 10mA, 4V	900mV @ 100µA	-	-	400mW	-65°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN1310-6
SSM6N62TU-LXHF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.8A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Power - Max: 500mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封裝: -	庫存3,504	Logic Level Gate, 1.2V Drive	20V	800mA (Ta)	85mOhm @ 800mA, 4.5V	1V @ 1mA	2nC @ 4.5V	177pF @ 10V	500mW (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	UF6
SH8KE6TB1	Rohm Semiconductor	MOSFET 2N-CH 100V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存4,629	-	100V	4.5A (Ta)	58mOhm @ 4.5A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 50V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MSCSM70AM10T3AG	Microchip Technology	SIC 2N-CH 700V 241A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Power - Max: 690W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存30	-	700V	241A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	690W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
AOSD32338C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	-	30V	6A (Ta)	30mOhm @ 6A, 10V	2.4V @ 250µA	6.3nC @ 10V	310pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NVMFD5C466NWFT1G	onsemi	MOSFET 2N-CH 40V 14A/49A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 3W (Ta), 38W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	庫存1,800	-	40V	14A (Ta), 49A (Tc)	8.1mOhm @ 15A, 10V	3.5V @ 250µA	11nC @ 10V	650pF @ 25V	3W (Ta), 38W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
CMSBN4615-HF	Comchip Technology	MOSFET 2N-CH 20V 7A 4CSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: CSPB1515-4	封裝: -	Request a Quote	-	20V	7A (Ta)	26mOhm @ 3A, 4.5V	1.3V @ 250µA	11nC @ 10V	-	1.5W (Ta)	150°C	Surface Mount	4-SMD, No Lead	CSPB1515-4
FDS8984-F085	onsemi	MOSFET 2N-CH 30V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	Logic Level Gate	30V	7A	23mOhm @ 7A, 10V	2.5V @ 250µA	13nC @ 10V	635pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SQJ740EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 123A PPAK SO-8L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V Power - Max: 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8L Dual BWL	封裝: -	Request a Quote	-	40V	123A (Tc)	3.4mOhm @ 7A, 10V	3.5V @ 250µA	56nC @ 10V	3143pF @ 25V	93W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8L Dual BWL
DMP58D1LVQ-13	Diodes Incorporated	MOSFET 2P-CH 50V 0.22A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	Request a Quote	-	50V	220mA (Ta)	8Ohm @ 100mA, 5V	2V @ 250µA	1.2nC @ 10V	37pF @ 25V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
AOC3870C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 12V 25A 10DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-AlphaDFN (3.01x1.52)	封裝: -	Request a Quote	-	12V	25A (Ta)	3.8mOhm @ 5A, 4.5V	1.1V @ 250µA	32nC @ 4.5V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	10-SMD, No Lead	10-AlphaDFN (3.01x1.52)
TM3055-TL-E	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

FW217A-TL-2WX

ON Semiconductor

MOSFET N-CH 35V 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,768

-

MP6K11TCR

Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A MPT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: MPT6

封裝: 6-SMD, Flat Leads

庫存2,912

Logic Level Gate

30V

3.5A

98 mOhm @ 3.5A, 10V

2.5V @ 1mA

1.9nC @ 5V

85pF @ 10V

2W

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

MPT6

APTJC120AM13VCT1AG

Microsemi Corporation

MOSFET SIC PHASE LEG MODULE

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: Module

庫存5,008

-

Chassis Mount

Module

APTM50AM70FT1G

Microsemi Corporation

MOSFET 2N-CH 500V 50A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 84 mOhm @ 42A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封裝: SP1

庫存2,640

Standard

500V

50A

84 mOhm @ 42A, 10V

5V @ 2.5mA

340nC @ 10V

10800pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

AOP607

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 60V 8DIP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存2,563,296

Logic Level Gate

60V

-

56 mOhm @ 4.7A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

2.5W

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SI1913EDH-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 0.88A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封裝: 6-TSSOP, SC-88, SOT-363

庫存78,300

Logic Level Gate

20V

880mA

490 mOhm @ 880mA, 4.5V

450mV @ 100µA

1.8nC @ 4.5V

-

570mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

ZXMD63P02XTC

Diodes Incorporated

MOSFET 2P-CH 20V 8MSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

庫存30,012

Logic Level Gate

20V

-

270 mOhm @ 1.2A, 4.5V

700mV @ 250µA (Min)

5.25nC @ 4.5V

290pF @ 15V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

NTND31015NZTAG

ON Semiconductor

MOSFET 2N-CH 20V 0.2A XLLGA6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.3pF @ 15V
Power - Max: 125mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFLGA
Supplier Device Package: 6-XLLGA (.90x.65)

封裝: 6-XFLGA

庫存4,864

Standard

20V

200mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

-

12.3pF @ 15V

125mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFLGA

6-XLLGA (.90x.65)

TSM4953DCS RLG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -30V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,712

Standard

30V

4.9A (Ta)

60 mOhm @ 4.9A, 10V

3V @ 250µA

28nC @ 10V

745pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NX3008CBKS,115

Nexperia USA Inc.

MOSFET N/P-CH 30V 6TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA, 200mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存5,152

Logic Level Gate

30V

350mA, 200mA

1.4 Ohm @ 350mA, 4.5V

1.1V @ 250µA

0.68nC @ 4.5V

50pF @ 15V

445mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

IRF7328TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存52,620

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.5V @ 250µA

78nC @ 10V

2675pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5515CDC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存12,288

Logic Level Gate

20V

4A

36 mOhm @ 6A, 4.5V

800mV @ 250µA

11.3nC @ 5V

632pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

FDD3510H

Fairchild/ON Semiconductor

MOSFET N/P-CH 80V 4.3A/2.8A DPAK

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

封裝: TO-252-5, DPak (4 Leads + Tab), TO-252AD

庫存36,264

Logic Level Gate

80V

4.3A, 2.8A

80 mOhm @ 4.3A, 10V

4V @ 250µA

18nC @ 10V

800pF @ 40V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

TC6321T-V/9U

Microchip Technology

MOSFET ARRAY N/P-CH 200V 8VDFN

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V, 200pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x5)

封裝: 8-VDFN Exposed Pad

庫存31,644

Logic Level Gate

200V

2A (Ta)

7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V

2V @ 1mA, 2.4V @ 1mA

-

110pF @ 25V, 200pF @ 25V

-

-55°C ~ 175°C

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x5)

EPC2107

EPC

MOSFET 3N-CH 100V 9BGA

FET Type: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Supplier Device Package: 9-BGA (1.35x1.35)

封裝: 9-VFBGA

庫存201,390

GaNFET (Gallium Nitride)

100V

1.7A, 500mA

320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V

2.5V @ 100µA, 2.5V @ 20µA

0.16nC @ 5V, 0.044nC @ 5V

16pF @ 50V, 7pF @ 50V

-

-40°C ~ 150°C (TJ)

Surface Mount

9-VFBGA

9-BGA (1.35x1.35)

CSD85301Q2T

Texas Instruments

MOSFET 2N-CH 20V 5A 6WSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WSON (2x2)

封裝: 6-WDFN Exposed Pad

庫存25,848

Logic Level Gate, 5V Drive

20V

5A

27 mOhm @ 5A, 4.5V

1.2V @ 250µA

5.4nC @ 4.5V

469pF @ 10V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WSON (2x2)

DMN2005DLP4K-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.3A 6-DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 300mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 900mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 400mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN1310-6

封裝: 6-SMD, No Lead

庫存470,640

Standard

20V

300mA

1.5 Ohm @ 10mA, 4V

900mV @ 100µA

-

400mW

-65°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN1310-6

SSM6N62TU-LXHF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Power - Max: 500mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封裝: -

庫存3,504

Logic Level Gate, 1.2V Drive

20V

800mA (Ta)

85mOhm @ 800mA, 4.5V

1V @ 1mA

2nC @ 4.5V

177pF @ 10V

500mW (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

UF6

SH8KE6TB1

Rohm Semiconductor

MOSFET 2N-CH 100V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存4,629

-

100V

4.5A (Ta)

58mOhm @ 4.5A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 50V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MSCSM70AM10T3AG

Microchip Technology

SIC 2N-CH 700V 241A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Power - Max: 690W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存30

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700V

241A (Tc)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

430nC @ 20V

9000pF @ 700V

690W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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AOSD32338C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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30V

6A (Ta)

30mOhm @ 6A, 10V

2.4V @ 250µA

6.3nC @ 10V

310pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NVMFD5C466NWFT1G

onsemi

MOSFET 2N-CH 40V 14A/49A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 3W (Ta), 38W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

庫存1,800

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40V

14A (Ta), 49A (Tc)

8.1mOhm @ 15A, 10V

3.5V @ 250µA

11nC @ 10V

650pF @ 25V

3W (Ta), 38W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

CMSBN4615-HF

Comchip Technology

MOSFET 2N-CH 20V 7A 4CSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: CSPB1515-4

封裝: -

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20V

7A (Ta)

26mOhm @ 3A, 4.5V

1.3V @ 250µA

11nC @ 10V

-

1.5W (Ta)

150°C

Surface Mount

4-SMD, No Lead

CSPB1515-4

FDS8984-F085

onsemi

MOSFET 2N-CH 30V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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Logic Level Gate

30V

7A

23mOhm @ 7A, 10V

2.5V @ 250µA

13nC @ 10V

635pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SQJ740EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 123A PPAK SO-8L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Power - Max: 93W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8L Dual BWL

封裝: -

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40V

123A (Tc)

3.4mOhm @ 7A, 10V

3.5V @ 250µA

56nC @ 10V

3143pF @ 25V

93W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8L Dual BWL

DMP58D1LVQ-13

Diodes Incorporated

MOSFET 2P-CH 50V 0.22A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

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50V

220mA (Ta)

8Ohm @ 100mA, 5V

2V @ 250µA

1.2nC @ 10V

37pF @ 25V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

AOC3870C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 12V 25A 10DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-AlphaDFN (3.01x1.52)

封裝: -

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12V

25A (Ta)

3.8mOhm @ 5A, 4.5V

1.1V @ 250µA

32nC @ 4.5V

-

3.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

10-SMD, No Lead

10-AlphaDFN (3.01x1.52)

TM3055-TL-E

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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