頁 7 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
PDTC123JE,115	NXP	TRANS PREBIAS NPN 150MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	封裝: SC-75, SOT-416	庫存4,128	100mA	50V	2.2k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	150mW	Surface Mount	SC-75, SOT-416	SC-75
DDTA144VKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,536	100mA	50V	47k	10k	33 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
PDTA143TK,115	NXP	TRANS PREBIAS PNP 250MW SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,360	100mA	50V	4.7k	-	200 @ 1mA, 5V	150mV @ 250µA, 5mA	1µA	-	250mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3; MPAK
FJV4110RMTF	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 40V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存7,312	100mA	40V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NSBA115TF3T5G	ON Semiconductor	TRANS PREBIAS PNP 254MW SOT1123 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	封裝: SOT-1123	庫存5,120	100mA	50V	100k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	254mW	Surface Mount	SOT-1123	SOT-1123
PDTC123EMB,315	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW 3DFN Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006B (0.6x1)	封裝: 3-XFDFN	庫存5,040	100mA	50V	2.2k	2.2k	30 @ 20mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz	250mW	Surface Mount	3-XFDFN	3-DFN1006B (0.6x1)
DTA143XMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: SOT-723	庫存6,176	100mA	50V	4.7k	10k	30 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VMT3
MMUN2138LT1G	ON Semiconductor	TRANS PREBIAS PNP 246MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	封裝: TO-236-3, SC-59, SOT-23-3	庫存7,280	100mA	50V	2.2k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
ADTC144EUAQ-7	Diodes Incorporated	PREBIAS TRANSISTOR SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存2,896	100mA	50V	47k	47k	-	-	-	250MHz	330mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA123TM3T5G	ON Semiconductor	TRANS PREBIAS PNP 0.26W SOT723 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 260mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SOT-723	封裝: SOT-723	庫存6,080	100mA	50V	2.2k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	260mW	Surface Mount	SOT-723	SOT-723
PDTC114YM,315	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW SOT883 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	封裝: SC-101, SOT-883	庫存6,800	100mA	50V	10k	47k	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	-	250mW	Surface Mount	SC-101, SOT-883	DFN1006-3
DTC143TUBTL	Rohm Semiconductor	TRANS PREBIAS NPN 200MW UMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: UMT3F	封裝: SC-85	庫存7,920	100mA	50V	4.7k	-	100 @ 1mA, 5V	150mV @ 250µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-85	UMT3F
MUN5232T1G	ON Semiconductor	TRANS PREBIAS NPN 202MW SC70-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 202mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	封裝: SC-70, SOT-323	庫存360,000	100mA	50V	4.7k	4.7k	15 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	202mW	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
UNR221T00L	Panasonic Electronic Components	TRANS PREBIAS NPN 200MW MINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,784	100mA	50V	22k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
DTC114EEBTL	Rohm Semiconductor	TRANS PREBIAS NPN 150MW EMT3F Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	封裝: SC-89, SOT-490	庫存40,644	50mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
UNR31A500L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	封裝: SOT-723	庫存2,864	80mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1
DDTB142TC-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存15,336	500mA	50V	470	-	100 @ 5mA, 5V	300mV @ 2.5mA, 50mA	500nA (ICBO)	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DDTC124GE-7	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封裝: SOT-523	庫存28,092	100mA	50V	-	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-523	SOT-523
UNR211E00L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	封裝: TO-236-3, SC-59, SOT-23-3	庫存612,000	100mA	50V	47k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
DDTC113TUA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存27,720	100mA	50V	1k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DDTC123TCA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存666,000	100mA	50V	2.2k	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
RN2305-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封裝: -	庫存795	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-70, SOT-323	SC-70
MMBTRC104SS	Diotec Semiconductor	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: -	Request a Quote	100 mA	50 V	47 kOhms	47 kOhms	80 @ 10mA, 5V	-	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
2SA1345	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: 3-SPA	封裝: -	Request a Quote	100 mA	50 V	47 kOhms	47 kOhms	-	300mV @ 250µA, 5mA	500nA	250 MHz	300 mW	Through Hole	3-SSIP	3-SPA
DTC114E	onsemi	TRANS PREBIAS NPN 50V 100MA Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
ADTA114YUAQ-13	Diodes Incorporated	TRANS PREBIAS PNP 50V SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 330 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	Request a Quote	100 mA	50 V	10 kOhms	47 kOhms	68 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	330 mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTD123YT-QR	Nexperia USA Inc.	TRANS PREBIAS NPN 50V TO236AB Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	封裝: -	Request a Quote	500 mA	50 V	2.2 kOhms	10 kOhms	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	250 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
NHDTC123JTR	Nexperia USA Inc.	TRANS PREBIAS NPN 80V TO236AB Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 170 MHz Power - Max: 250 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	封裝: -	庫存28,731	100 mA	80 V	2.2 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	170 MHz	250 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB

PDTC123JE,115

NXP

TRANS PREBIAS NPN 150MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

封裝: SC-75, SOT-416

庫存4,128

100mA

50V

2.2k

47k

100 @ 10mA, 5V

100mV @ 250µA, 5mA

1µA

-

150mW

Surface Mount

SC-75, SOT-416

SC-75

DDTA144VKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,536

100mA

50V

47k

10k

33 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59-3

PDTA143TK,115

NXP

TRANS PREBIAS PNP 250MW SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,360

100mA

50V

4.7k

-

200 @ 1mA, 5V

150mV @ 250µA, 5mA

1µA

-

250mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3; MPAK

FJV4110RMTF

Fairchild/ON Semiconductor

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存7,312

100mA

40V

10k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

100nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NSBA115TF3T5G

ON Semiconductor

TRANS PREBIAS PNP 254MW SOT1123

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123

封裝: SOT-1123

庫存5,120

100mA

50V

100k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

254mW

Surface Mount

SOT-1123

PDTC123EMB,315

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW 3DFN

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)

封裝: 3-XFDFN

庫存5,040

100mA

50V

2.2k

30 @ 20mA, 5V

150mV @ 500µA, 10mA

1µA

230MHz

250mW

Surface Mount

3-XFDFN

3-DFN1006B (0.6x1)

DTA143XMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: SOT-723

庫存6,176

100mA

50V

4.7k

10k

30 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-723

VMT3

MMUN2138LT1G

ON Semiconductor

TRANS PREBIAS PNP 246MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 246mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

封裝: TO-236-3, SC-59, SOT-23-3

庫存7,280

100mA

50V

2.2k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

246mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

ADTC144EUAQ-7

Diodes Incorporated

PREBIAS TRANSISTOR SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存2,896

100mA

50V

47k

-

250MHz

330mW

Surface Mount

SC-70, SOT-323

SOT-323

DTA123TM3T5G

ON Semiconductor

TRANS PREBIAS PNP 0.26W SOT723

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723

封裝: SOT-723

庫存6,080

100mA

50V

2.2k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

260mW

Surface Mount

SOT-723

PDTC114YM,315

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3

封裝: SC-101, SOT-883

庫存6,800

100mA

50V

10k

47k

100 @ 5mA, 5V

100mV @ 250µA, 5mA

1µA

-

250mW

Surface Mount

SC-101, SOT-883

DFN1006-3

DTC143TUBTL

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F

封裝: SC-85

庫存7,920

100mA

50V

4.7k

-

100 @ 1mA, 5V

150mV @ 250µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

SC-85

UMT3F

MUN5232T1G

ON Semiconductor

TRANS PREBIAS NPN 202MW SC70-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 202mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)

封裝: SC-70, SOT-323

庫存360,000

100mA

50V

4.7k

15 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

202mW

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

UNR221T00L

Panasonic Electronic Components

TRANS PREBIAS NPN 200MW MINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,784

100mA

50V

22k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

DTC114EEBTL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

封裝: SC-89, SOT-490

庫存40,644

50mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SC-89, SOT-490

EMT3F (SOT-416FL)

UNR31A500L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1

封裝: SOT-723

庫存2,864

80mA

50V

10k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

100mW

Surface Mount

SOT-723

SSSMini3-F1

DDTB142TC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存15,336

500mA

50V

470

-

100 @ 5mA, 5V

300mV @ 2.5mA, 50mA

500nA (ICBO)

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

DDTC124GE-7

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封裝: SOT-523

庫存28,092

100mA

50V

-

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA (ICBO)

250MHz

150mW

Surface Mount

SOT-523

UNR211E00L

Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

封裝: TO-236-3, SC-59, SOT-23-3

庫存612,000

100mA

50V

47k

22k

60 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

DDTC113TUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存27,720

100mA

50V

1k

-

100 @ 1mA, 5V

300mV @ 1mA, 10mA

500nA (ICBO)

250MHz

200mW

Surface Mount

SC-70, SOT-323

SOT-323

DDTC123TCA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存666,000

100mA

50V

2.2k

-

100 @ 1mA, 5V

300mV @ 500µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

RN2305-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封裝: -

庫存795

100 mA

50 V

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

100 mW

Surface Mount

SC-70, SOT-323

SC-70

MMBTRC104SS

Diotec Semiconductor

TRANS PREBIAS NPN 50V SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: -

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100 mA

50 V

47 kOhms

80 @ 10mA, 5V

-

500nA

200 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

2SA1345

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: 3-SSIP
Supplier Device Package: 3-SPA

封裝: -

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100 mA

50 V

47 kOhms

-

300mV @ 250µA, 5mA

500nA

250 MHz

300 mW

Through Hole

3-SSIP

3-SPA

DTC114E

onsemi

TRANS PREBIAS NPN 50V 100MA

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

ADTA114YUAQ-13

Diodes Incorporated

TRANS PREBIAS PNP 50V SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 330 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

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100 mA

50 V

10 kOhms

47 kOhms

68 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

330 mW

Surface Mount

SC-70, SOT-323

SOT-323

PDTD123YT-QR

Nexperia USA Inc.

TRANS PREBIAS NPN 50V TO236AB

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 250 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

封裝: -

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500 mA

50 V

2.2 kOhms

10 kOhms

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

-

250 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

NHDTC123JTR

Nexperia USA Inc.

TRANS PREBIAS NPN 80V TO236AB

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 170 MHz
Power - Max: 250 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB

封裝: -

庫存28,731

100 mA

80 V

2.2 kOhms

47 kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

170 MHz

250 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB