頁 10 - 電晶體 - 雙極 (BJT) - 單、預偏壓 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
MUN2213JT1	ON Semiconductor	TRANS PREBIAS NPN 338MW SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 338mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	封裝: TO-236-3, SC-59, SOT-23-3	庫存297,912	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	338mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
PDTB113ZS,126	NXP	TRANS PREBIAS PNP 500MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,456	500mA	50V	1k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
DTA115EET1	ON Semiconductor	TRANS PREBIAS PNP 200MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	封裝: SC-75, SOT-416	庫存2,816	100mA	50V	100k	100k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
UNR212100L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,000	500mA	50V	2.2k	2.2k	40 @ 5mA, 10V	250mV @ 5mA, 100mA	1µA	200MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
PDTA143EE,115	NXP	TRANS PREBIAS PNP 150MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	封裝: SC-75, SOT-416	庫存2,064	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	150mV @ 500µA, 10mA	1µA	-	150mW	Surface Mount	SC-75, SOT-416	SC-75
PDTC144EE,115	NXP	TRANS PREBIAS NPN 150MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	封裝: SC-75, SOT-416	庫存6,224	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	150mW	Surface Mount	SC-75, SOT-416	SC-75
PDTA124TE,115	NXP	TRANS PREBIAS PNP 150MW SC75 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	封裝: SC-75, SOT-416	庫存4,112	100mA	50V	22k	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	150mW	Surface Mount	SC-75, SOT-416	SC-75
NSBA144WF3T5G	ON Semiconductor	TRANS PREBIAS PNP 254MW SOT1123 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	封裝: SOT-1123	庫存3,360	100mA	50V	47k	22k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	254mW	Surface Mount	SOT-1123	SOT-1123
PDTB114EUX	Nexperia USA Inc.	TRANS PREBIAS PNP 0.425W Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存3,120	500mA	50V	10k	10k	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	140MHz	300mW	Surface Mount	SC-70, SOT-323	SOT-323-3
DTA125TKAT146	Rohm Semiconductor	TRANS PREBIAS PNP 0.2W SMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 200k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,160	100mA	50V	200k	-	100 @ 1mA, 5V	300mV @ 50µA, 500µA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DRA9152Z0L	Panasonic Electronic Components	TRANS PREBIAS PNP 125MW SSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 510 Resistor - Emitter Base (R2) (Ohms): 5.1k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	封裝: SC-89, SOT-490	庫存5,152	100mA	50V	510	5.1k	20 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
DRC9152Z0L	Panasonic Electronic Components	TRANS PREBIAS NPN 125MW SSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 510 Resistor - Emitter Base (R2) (Ohms): 5.1k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3-B	封裝: SC-89, SOT-490	庫存4,592	100mA	50V	510	5.1k	20 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F3-B
DRA3143Z0L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B	封裝: SOT-723	庫存6,592	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	100mW	Surface Mount	SOT-723	SSSMini3-F2-B
DTA114WETL	Rohm Semiconductor	TRANS PREBIAS PNP 150MW EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	封裝: SC-75, SOT-416	庫存3,200	100mA	50V	10k	4.7k	24 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SC-75, SOT-416	EMT3
DTA114EMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 150MW VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: SOT-723	庫存6,928	50mA	50V	10k	10k	20 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VMT3
DTC014EMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 50V VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	封裝: SOT-723	庫存3,200	50mA	50V	10k	10k	35 @ 5mA, 10V	150mV @ 500µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-723	VMT3
DTC144WUAT106	Rohm Semiconductor	TRANS PREBIAS NPN 200MW UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: SC-70, SOT-323	庫存37,200	30mA	50V	47k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	SC-70, SOT-323	UMT3
BCR505E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 0.33W SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 330mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存81,576	500mA	50V	2.2k	10k	70 @ 50mA, 5V	300mV @ 2.5mA, 50mA	100nA (ICBO)	100MHz	330mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
RN2109-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存7,200	100 mA	50 V	47 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM
DTA123JCA-HF	Comchip Technology	TRANS PREBIAS PNP 50V SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: -	Request a Quote	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MUN2215T1	onsemi	TRANS BRT NPN 100MA 50V SC-59 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DTA115TCAT116	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A SST3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	封裝: -	庫存9,000	100 mA	50 V	100 kOhms	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
PDTC123JQB-QZ	Nexperia USA Inc.	TRANS PREBIAS NPN 50V 0.1A 3DFN Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230 MHz Power - Max: 340 mW Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1110D-3	封裝: -	庫存15,000	100 mA	50 V	2.2 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	230 MHz	340 mW	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1110D-3
DTA123JU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存8,910	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
DTC124ESA-AP	Micro Commercial Co	TRANS PREBIAS NPN 50V TO92S Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S	封裝: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 Short Body (Formed Leads)	TO-92S
MUN2231T1G	onsemi	TRANS PREBIAS NPN 50V 0.1A SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 338 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	封裝: -	庫存45,000	100 mA	50 V	2.2 kOhms	2.2 kOhms	8 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	338 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
DTC124XU3HZGT106	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A UMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	封裝: -	庫存4,227	100 mA	50 V	22 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
NHDTC123JUX	Nexperia USA Inc.	TRANS PREBIAS NPN 80V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 170 MHz Power - Max: 235 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: -	庫存7,230	100 mA	80 V	2.2 kOhms	47 kOhms	100 @ 10mA, 5V	100mV @ 500µA, 10mA	100nA	170 MHz	235 mW	Surface Mount	SC-70, SOT-323	SOT-323

MUN2213JT1

ON Semiconductor

TRANS PREBIAS NPN 338MW SC59

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 338mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

封裝: TO-236-3, SC-59, SOT-23-3

庫存297,912

100mA

50V

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

338mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

PDTB113ZS,126

NXP

TRANS PREBIAS PNP 500MW TO92-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,456

500mA

50V

1k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

500nA

-

500mW

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

DTA115EET1

ON Semiconductor

TRANS PREBIAS PNP 200MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75, SOT-416

封裝: SC-75, SOT-416

庫存2,816

100mA

50V

100k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

200mW

Surface Mount

SC-75, SOT-416

UNR212100L

Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,000

500mA

50V

2.2k

40 @ 5mA, 10V

250mV @ 5mA, 100mA

1µA

200MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

PDTA143EE,115

NXP

TRANS PREBIAS PNP 150MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

封裝: SC-75, SOT-416

庫存2,064

100mA

50V

4.7k

30 @ 10mA, 5V

150mV @ 500µA, 10mA

1µA

-

150mW

Surface Mount

SC-75, SOT-416

SC-75

PDTC144EE,115

NXP

TRANS PREBIAS NPN 150MW SC75

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

封裝: SC-75, SOT-416

庫存6,224

100mA

50V

47k

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

150mW

Surface Mount

SC-75, SOT-416

SC-75

PDTA124TE,115

NXP

TRANS PREBIAS PNP 150MW SC75

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75

封裝: SC-75, SOT-416

庫存4,112

100mA

50V

22k

-

100 @ 1mA, 5V

150mV @ 500µA, 10mA

1µA

-

150mW

Surface Mount

SC-75, SOT-416

SC-75

NSBA144WF3T5G

ON Semiconductor

TRANS PREBIAS PNP 254MW SOT1123

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 254mW
Mounting Type: Surface Mount
Package / Case: SOT-1123
Supplier Device Package: SOT-1123

封裝: SOT-1123

庫存3,360

100mA

50V

47k

22k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

254mW

Surface Mount

SOT-1123

PDTB114EUX

Nexperia USA Inc.

TRANS PREBIAS PNP 0.425W

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 140MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存3,120

500mA

50V

10k

70 @ 50mA, 5V

100mV @ 2.5mA, 50mA

500nA

140MHz

300mW

Surface Mount

SC-70, SOT-323

SOT-323-3

DTA125TKAT146

Rohm Semiconductor

TRANS PREBIAS PNP 0.2W SMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 200k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,160

100mA

50V

200k

-

100 @ 1mA, 5V

300mV @ 50µA, 500µA

500nA (ICBO)

250MHz

200mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SMT3

DRA9152Z0L

Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 510
Resistor - Emitter Base (R2) (Ohms): 5.1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

封裝: SC-89, SOT-490

庫存5,152

100mA

50V

510

5.1k

20 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

DRC9152Z0L

Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 510
Resistor - Emitter Base (R2) (Ohms): 5.1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3-B

封裝: SC-89, SOT-490

庫存4,592

100mA

50V

510

5.1k

20 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SC-89, SOT-490

SSMini3-F3-B

DRA3143Z0L

Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B

封裝: SOT-723

庫存6,592

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

100mW

Surface Mount

SOT-723

SSSMini3-F2-B

DTA114WETL

Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3

封裝: SC-75, SOT-416

庫存3,200

100mA

50V

10k

4.7k

24 @ 10mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SC-75, SOT-416

EMT3

DTA114EMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 150MW VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: SOT-723

庫存6,928

50mA

50V

10k

20 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-723

VMT3

DTC014EMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V VMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

封裝: SOT-723

庫存3,200

50mA

50V

10k

35 @ 5mA, 10V

150mV @ 500µA, 5mA

-

250MHz

150mW

Surface Mount

SOT-723

VMT3

DTC144WUAT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: SC-70, SOT-323

庫存37,200

30mA

50V

47k

22k

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

200mW

Surface Mount

SC-70, SOT-323

UMT3

BCR505E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 330mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存81,576

500mA

50V

2.2k

10k

70 @ 50mA, 5V

300mV @ 2.5mA, 50mA

100nA (ICBO)

100MHz

330mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

RN2109-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存7,200

100 mA

50 V

47 kOhms

22 kOhms

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200 MHz

100 mW

Surface Mount

SC-75, SOT-416

SSM

DTA123JCA-HF

Comchip Technology

TRANS PREBIAS PNP 50V SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: -

Request a Quote

100 mA

50 V

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MUN2215T1

onsemi

TRANS BRT NPN 100MA 50V SC-59

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DTA115TCAT116

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A SST3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 100 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

封裝: -

庫存9,000

100 mA

50 V

100 kOhms

-

100 @ 1mA, 5V

300mV @ 100µA, 1mA

500nA (ICBO)

250 MHz

200 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SST3

PDTC123JQB-QZ

Nexperia USA Inc.

TRANS PREBIAS NPN 50V 0.1A 3DFN

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3

封裝: -

庫存15,000

100 mA

50 V

2.2 kOhms

47 kOhms

100 @ 10mA, 5V

100mV @ 250µA, 5mA

100nA

230 MHz

340 mW

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1110D-3

DTA123JU3HZGT106

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A UMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存8,910

100 mA

50 V

2.2 kOhms

47 kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

DTC124ESA-AP

Micro Commercial Co

TRANS PREBIAS NPN 50V TO92S

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S

封裝: -

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100 mA

50 V

22 kOhms

56 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

300 mW

Through Hole

TO-226-3, TO-92-3 Short Body (Formed Leads)

TO-92S

MUN2231T1G

onsemi

TRANS PREBIAS NPN 50V 0.1A SC59

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 338 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

封裝: -

庫存45,000

100 mA

50 V

2.2 kOhms

8 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

338 mW

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

DTC124XU3HZGT106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

封裝: -

庫存4,227

100 mA

50 V

22 kOhms

47 kOhms

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250 MHz

200 mW

Surface Mount

SC-70, SOT-323

UMT3

NHDTC123JUX

Nexperia USA Inc.

TRANS PREBIAS NPN 80V SOT323

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 170 MHz
Power - Max: 235 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: -

庫存7,230

100 mA

80 V

2.2 kOhms

47 kOhms

100 @ 10mA, 5V

100mV @ 500µA, 10mA

100nA

170 MHz

235 mW

Surface Mount

SC-70, SOT-323

SOT-323