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二極體 - 整流器 - 單

記錄 52,788
頁  403/1,886
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製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
NS8DTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-220-2
庫存4,576
200V
8A
1.1V @ 8A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
ES3B/7T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存6,656
100V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
LS411060
Powerex Inc.

DIODE MODULE 1KV 600A POW-R-BLOK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: POW-R-BLOK? Module
  • Supplier Device Package: POW-R-BLOK? Module
  • Operating Temperature - Junction: -
封裝: POW-R-BLOK? Module
庫存4,640
1000V
600A
1.19V @ 1800A
Standard Recovery >500ns, > 200mA (Io)
-
40mA @ 1000V
-
Chassis Mount
POW-R-BLOK? Module
POW-R-BLOK? Module
-
JAN1N5554
Microsemi Corporation

DIODE GEN PURP 1KV 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: B, Axial
庫存6,512
1000V
3A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
MUR5010
GeneSiC Semiconductor

DIODE GEN PURP 100V 50A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-203AB, DO-5, Stud
庫存3,568
100V
50A
1V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-55°C ~ 150°C
TSPB5H100S S2G
TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 5A, 100

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: SMPC4.0
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-277, 3-PowerDFN
庫存4,304
100V
5A
660mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
SS26L RQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-219AB
庫存3,456
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
GB01SLT12-252
GeneSiC Semiconductor

DIODE SILICON 1.2KV 1A TO252

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 2µA @ 1200V
  • Capacitance @ Vr, F: 69pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,016
1200V
1A
1.8V @ 1A
No Recovery Time > 500mA (Io)
0ns
2µA @ 1200V
69pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
-55°C ~ 175°C
FS1ME-TP
Micro Commercial Co

DIODE GEN PURP 1KV 1A SMAE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMAE
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: DO-214AC, SMA
庫存6,352
1000V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAE
-50°C ~ 150°C
SK84C-R6
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
Request a Quote
40 V
8A
550 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
UF4003GP-TP
Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
RF301BGE2STL
Rohm Semiconductor

DIODE GEN PURP 200V 3A TO252

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
庫存6,879
200 V
3A
930 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
150°C (Max)
US1D
Diotec Semiconductor

ULTRAFAST SMA 200V 1A 50NS 150C

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC, SMA
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: -
庫存22,440
200 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
-
Surface Mount
DO-214AC, SMA
DO-214AC, SMA
-50°C ~ 150°C
PG206_R2_00001
Panjit International Inc.

DIODE GEN PURP 600V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
2A
1.1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
25pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
S3D06065M
SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3 µA @ 650 V
  • Capacitance @ Vr, F: 382pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-PDFNWB (5x6)
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存675
650 V
34A
1.7 V @ 6 A
No Recovery Time > 500mA (Io)
-
3 µA @ 650 V
382pF @ 0V, 1MHz
Surface Mount
8-PowerVDFN
8-PDFNWB (5x6)
-55°C ~ 175°C
C6D10065G-TR
Wolfspeed, Inc.

DIODE SIL CARB 650V 36A TO263-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 611pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存6,687
650 V
36A
1.4 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 650 V
611pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 175°C
S15JCH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 15A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 93pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存9,000
600 V
15A
1.1 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
1 µA @ 600 V
93pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SD24145C
Microchip Technology

DIODE SCHOTTKY 45V 30A TO204AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
45 V
30A
700 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 45 V
-
Through Hole
TO-204AA, TO-3
TO-204AA (TO-3)
-65°C ~ 175°C
GS1GFL-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC (SMA-FL)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
400 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
15pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC (SMA-FL)
-55°C ~ 150°C
CMR1F-10M-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 1000V 1A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
庫存2,349
1000 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
500 ns
5 µA @ 1000 V
15pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
JANS1N6662-TR
Microchip Technology

DIODE GEN PURP 400V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 nA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
400 V
500mA
1 V @ 400 mA
Standard Recovery >500ns, > 200mA (Io)
-
50 nA @ 400 V
-
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
JAN1N5195UR-TR
Microchip Technology

DIODE GP 180V 200MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 180 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
Request a Quote
180 V
200mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
-
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
STB1060
SMC Diode Solutions

DIODE SCHOTTKY 60V D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 850 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存1,821
60 V
-
650 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
850 µA @ 60 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
SD200SCU150A-T1
SMC Diode Solutions

DIODE SCHOTTKY 150V 60A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 150 V
  • Capacitance @ Vr, F: 1500pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 200°C
封裝: -
Request a Quote
150 V
60A
920 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 150 V
1500pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 200°C
MB59_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 90V 5A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 90 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
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90 V
5A
800 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 90 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-65°C ~ 175°C
BAV19WS-HG3-18
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 100 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C
封裝: -
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100 V
250mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 100 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C
SCS220AEGC11
Rohm Semiconductor

DIODE SIL CARBIDE 650V 20A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 400 µA @ 600 V
  • Capacitance @ Vr, F: 730pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: 175°C
封裝: -
庫存1,104
650 V
20A
1.55 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
400 µA @ 600 V
730pF @ 1V, 1MHz
Through Hole
TO-247-3
TO-247
175°C
1N1198
Solid State Inc.

DIODE GEN PURP 600V 40A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: -
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600 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 600 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C