頁 401 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
FCSP0530ETR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 500MA FLIPKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 440mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Flipky? Supplier Device Package: Flipky? Operating Temperature - Junction: -55°C ~ 150°C	封裝: Flipky?	庫存2,480	30V	500mA	440mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	Surface Mount	Flipky?	Flipky?	-55°C ~ 150°C
JAN1N6073	Microsemi Corporation	DIODE GEN PURP 50V 850MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 850mA Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 155°C	封裝: A, Axial	庫存2,320	50V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 155°C
VIT1080S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 80V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-262-3 Long Leads, I2Pak, TO-262AA	庫存5,712	80V	10A	810mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 80V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-55°C ~ 150°C
UG58GHA0G	TSC America Inc.	DIODE, ULTRA FAST, 5A, 600V, 20N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存7,056	600V	5A	2.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	30µA @ 600V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
ES1B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存5,296	100V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2A M4G	TSC America Inc.	DIODE, 2A, 50V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存3,552	50V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HER103G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存2,576	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
V8KM60DU-M3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 4A DUAL FLATP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 60V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	封裝: 8-PowerTDFN	庫存3,728	60V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 60V	500pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	-	-40°C ~ 175°C
RBR3MM60BTR	Rohm Semiconductor	DIODE SCHOTTKY 60V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 120µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	封裝: SOD-123F	庫存4,448	60V	3A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 60V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
RB521S-30L2-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 100MA 2TDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 125°C (Max)	封裝: 0402 (1006 Metric)	庫存3,264	30V	100mA	350mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 10V	-	Surface Mount	0402 (1006 Metric)	DFN1006-2	125°C (Max)
US1JFL-TP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-221AC, SMA Flat Leads	庫存84,852	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	17pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-65°C ~ 175°C
SBR10E45P5-7	Diodes Incorporated	DIODE SBR 45V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	封裝: PowerDI? 5	庫存46,242	45V	10A	470mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	280µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 150°C
MBR350RLG	ON Semiconductor	DIODE SCHOTTKY 50V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AA, DO-27, Axial	庫存40,800	50V	3A	740mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 50V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 150°C
UES1301SM-TR	Microchip Technology	DIODE GEN PURP 50V 8A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -	封裝: -	Request a Quote	50 V	8A	925 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Surface Mount	SQ-MELF, E	D-5B	-
NTE5928	NTE Electronics, Inc	DIODE GEN PURP 800V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	800 V	20A	1.23 V @ 63 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
GP1510-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	1000 V	15A	1.1 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
BAS40LS-QYL	Nexperia USA Inc.	DIODE SCHOTTKY 40V 120MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2 Operating Temperature - Junction: 150°C	封裝: -	庫存28,002	40 V	120mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	5pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006BD-2	150°C
P1000G	Diotec Semiconductor	DIODE P600 400V 10A 175C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 175°C	封裝: -	Request a Quote	400 V	10A	1.05 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 400 V	-	Through Hole	P600, Axial	P600	-50°C ~ 175°C
SF33G-TP	Micro Commercial Co	DIODE GEN PURP 150V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
VS-90EPF12L-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 90A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 90 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	Request a Quote	1200 V	90A	1.38 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
NA03HSA12	KYOCERA AVX	DIODE SCHOTTKY 120V 3A NA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: NA (DO-221BC) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	Request a Quote	120 V	3A	860 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 120 V	-	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	NA (DO-221BC)	-40°C ~ 150°C
S3M_HF	Diodes Incorporated	DIODE GEN PURP 1KV 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 150°C	封裝: -	Request a Quote	1000 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 150°C
HERAF1604GH	Taiwan Semiconductor Corporation	50NS, 16A, 300V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存3,000	300 V	16A	1 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
S42120D	Microchip Technology	DIODE GP 1.2KV 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	1200 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
V12PM45-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 45V 12A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: 2350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封裝: -	Request a Quote	45 V	12A	600 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	2350pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SE20DTLJ-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3.8A SMPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3.8A Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 330 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存6,510	600 V	3.8A	1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	330 ns	5 µA @ 600 V	160pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	SMPD	-55°C ~ 175°C
SD2010S150S1R0	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	封裝: -	Request a Quote	150 V	1A	880 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 150 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
NA05HSA12	KYOCERA AVX	DIODE SCHOTTKY 120V 5A NA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 120 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: NA (DO-221BC) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	Request a Quote	120 V	5A	860 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 120 V	-	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	NA (DO-221BC)	-40°C ~ 150°C

FCSP0530ETR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 500MA FLIPKY

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 440mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Flipky?
Supplier Device Package: Flipky?
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Flipky?

庫存2,480

30V

500mA

440mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

-

Surface Mount

Flipky?

-55°C ~ 150°C

JAN1N6073

Microsemi Corporation

DIODE GEN PURP 50V 850MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 850mA
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 155°C

封裝: A, Axial

庫存2,320

50V

850mA

2.04V @ 9.4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 50V

-

Through Hole

A, Axial

A-PAK

-65°C ~ 155°C

VIT1080S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 80V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

庫存5,712

80V

10A

810mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 80V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-55°C ~ 150°C

UG58GHA0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 600V, 20N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存7,056

600V

5A

2.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

30µA @ 600V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

ES1B-M3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存5,296

100V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 100V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

S2A M4G

TSC America Inc.

DIODE, 2A, 50V, DO-214AA (SMB)

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存3,552

50V

2A

1.15V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1µA @ 50V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

HER103G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存2,576

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

V8KM60DU-M3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 4A DUAL FLATP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 60V
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 175°C

封裝: 8-PowerTDFN

庫存3,728

60V

8A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 60V

500pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

-

-40°C ~ 175°C

RBR3MM60BTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 3A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 120µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

封裝: SOD-123F

庫存4,448

60V

3A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

120µA @ 60V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

RB521S-30L2-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 100MA 2TDFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 350mV @ 10mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: 125°C (Max)

封裝: 0402 (1006 Metric)

庫存3,264

30V

100mA

350mV @ 10mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 10V

-

Surface Mount

0402 (1006 Metric)

DFN1006-2

125°C (Max)

US1JFL-TP

Micro Commercial Co

DIODE GEN PURP 600V 1A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-221AC, SMA Flat Leads

庫存84,852

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 600V

17pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SMA-FL)

-65°C ~ 175°C

SBR10E45P5-7

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 280µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 150°C

封裝: PowerDI? 5

庫存46,242

45V

10A

470mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

280µA @ 45V

-

Surface Mount

PowerDI? 5

-55°C ~ 150°C

MBR350RLG

ON Semiconductor

DIODE SCHOTTKY 50V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AA, DO-27, Axial

庫存40,800

50V

3A

740mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 50V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 150°C

UES1301SM-TR

Microchip Technology

DIODE GEN PURP 50V 8A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -

封裝: -

Request a Quote

50 V

8A

925 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

-

Surface Mount

SQ-MELF, E

D-5B

-

NTE5928

NTE Electronics, Inc

DIODE GEN PURP 800V 20A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 63 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

800 V

20A

1.23 V @ 63 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

GP1510-BP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

1000 V

15A

1.1 V @ 15 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

BAS40LS-QYL

Nexperia USA Inc.

DIODE SCHOTTKY 40V 120MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C

封裝: -

庫存28,002

40 V

120mA

1 V @ 40 mA

Small Signal =< 200mA (Io), Any Speed

-

10 µA @ 40 V

5pF @ 0V, 1MHz

Surface Mount

SOD-882

DFN1006BD-2

150°C

P1000G

Diotec Semiconductor

DIODE P600 400V 10A 175C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C

封裝: -

Request a Quote

400 V

10A

1.05 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 400 V

-

Through Hole

P600, Axial

P600

-50°C ~ 175°C

SF33G-TP

Micro Commercial Co

DIODE GEN PURP 150V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 150 V

50pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

VS-90EPF12L-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 90A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 90 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

Request a Quote

1200 V

90A

1.38 V @ 90 A

Fast Recovery =< 500ns, > 200mA (Io)

480 ns

100 µA @ 1200 V

-

Through Hole

TO-247-2

TO-247AD

-40°C ~ 150°C

NA03HSA12

KYOCERA AVX

DIODE SCHOTTKY 120V 3A NA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 120 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: NA (DO-221BC)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

Request a Quote

120 V

3A

860 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 120 V

-

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

NA (DO-221BC)

-40°C ~ 150°C

S3M_HF

Diodes Incorporated

DIODE GEN PURP 1KV 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

1000 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 150°C

HERAF1604GH

Taiwan Semiconductor Corporation

50NS, 16A, 300V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存3,000

300 V

16A

1 V @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 300 V

150pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

S42120D

Microchip Technology

DIODE GP 1.2KV 125A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 125A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

1200 V

125A

1.2 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 1200 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

V12PM45-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 12A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封裝: -

Request a Quote

45 V

12A

600 mV @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 45 V

2350pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

SE20DTLJ-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.8A SMPD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3.8A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 330 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package: SMPD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存6,510

600 V

3.8A

1 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

330 ns

5 µA @ 600 V

160pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), Variant

SMPD

-55°C ~ 175°C

SD2010S150S1R0

KYOCERA AVX

SCHOTTKY DIODES

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Operating Temperature - Junction: -55°C ~ 125°C

封裝: -

Request a Quote

150 V

1A

880 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 150 V

-

Surface Mount

1206 (3216 Metric)

1206

-55°C ~ 125°C

NA05HSA12

KYOCERA AVX

DIODE SCHOTTKY 120V 5A NA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: NA (DO-221BC)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

Request a Quote

120 V

5A

860 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 120 V

-

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

NA (DO-221BC)

-40°C ~ 150°C