頁 298 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
30EPH06	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -65°C ~ 175°C	封裝: TO-247-2	庫存39,312	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-65°C ~ 175°C
1N5819HW-7	Diodes Incorporated	DIODE SCHOTTKY 40V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	封裝: SOD-123	庫存103,140	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	60pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
HFA135NH40R	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 135A HALF-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 135A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 135A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 9µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	封裝: D-67 HALF-PAK	庫存7,424	400V	135A	1.3V @ 135A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	9µA @ 400V	-	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-
D452N12E VF	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 1200V 710A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存6,160	-	-	-	-	-	-	-	-	-	-	-
VS-SD600N12PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 600A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 180°C	封裝: B-8	庫存7,136	1200V	600A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 1200V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 180°C
R7220406HSOO	Powerex Inc.	DIODE MODULE 400V 650A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 650A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封裝: DO-200AB, B-PUK	庫存3,296	400V	650A	2.05V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 400V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
1N3265	Powerex Inc.	DIODE GEN PURP 300V 160A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 160A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-205AB, DO-9, Stud	庫存6,848	300V	160A	-	Standard Recovery >500ns, > 200mA (Io)	-	12mA @ 300V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 175°C
JANTXV1N5550US	Microsemi Corporation	DIODE GEN PURP 200V 5A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	封裝: SQ-MELF, B	庫存6,704	200V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
1N5809US.TR	Semtech Corporation	D MET 6A SFST 100V SM T&R Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	庫存3,232	-	-	-	-	-	-	-	-	-	-	-
NGTD17R120F2SWK	ON Semiconductor	DIODE GEN PURP 1.2KV DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.8V @ 35A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 175°C (Max)	封裝: Die	庫存4,512	1200V	-	1.8V @ 35A	-	-	1µA @ 1200V	-	Surface Mount	Die	Die	175°C (Max)
SRAF10150 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: TO-220-2 Full Pack	庫存2,432	150V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SB380-T	Diodes Incorporated	DIODE SCHOTTKY 80V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-201AD, Axial	庫存5,104	80V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
UG4D-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-201AD, Axial	庫存4,080	200V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
AR1PDHM3/84A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-220AA	庫存7,648	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 200V	12.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
RS1PB-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-220AA	庫存216,000	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
1N4001GHA0G	TSC America Inc.	DIODE, 1A, 50V, AEC-Q101, DO-204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存7,232	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S3G-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AB, SMC	庫存678,960	400V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
STTH1L06UFY	STMicroelectronics	DIODE ULT FAST 600V 1A SMBFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Flat Leads Supplier Device Package: SMBflat Operating Temperature - Junction: -40°C ~ 175°C	封裝: DO-214AA, SMB Flat Leads	庫存60,000	600V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 600V	-	Surface Mount	DO-214AA, SMB Flat Leads	SMBflat	-40°C ~ 175°C
U1D-M3/5AT	Vishay Semiconductor Diodes Division	DIODE RECT 1A 200V DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 6.8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存158,910	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	5µA @ 200V	6.8pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFAF2004G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存3,000	200 V	20A	975 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
IDT04S60C	Infineon Technologies	RECTIFIER DIODE, SCHOTTKY Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 15 µA @ 600 V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	600 V	3A	2.4 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 600 V	60pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
WNSC5D106506Q	WeEn Semiconductors	DIODE SIL CARB 650V 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 323pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	323pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
FR601B-G	Comchip Technology	DIODE GEN PURP 50V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 50 V	100pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
1N3743R	Microchip Technology	DIODE GP REV 1.2KV 275A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 190°C	封裝: -	Request a Quote	1200 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 1200 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 190°C
RB521S-40GTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GSMBR0540	Good-Ark Semiconductor	DIODE, SCHOTTKY, 500MA, 40V, SOD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	封裝: -	庫存17,619	40 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	30pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
HS3D-K-M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 53pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	200 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	53pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS35HT-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 3A SOD123HT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 50 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123HT Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	50 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 50 V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123HT	-55°C ~ 150°C

30EPH06

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C

封裝: TO-247-2

庫存39,312

600V

30A

2.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-247-2

TO-247AC Modified

-65°C ~ 175°C

1N5819HW-7

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C

封裝: SOD-123

庫存103,140

40V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

60pF @ 4V, 1MHz

Surface Mount

SOD-123

-65°C ~ 125°C

HFA135NH40R

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 135A HALF-PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 135A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 135A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 9µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

封裝: D-67 HALF-PAK

庫存7,424

400V

135A

1.3V @ 135A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

9µA @ 400V

-

Chassis Mount

D-67 HALF-PAK

HALF-PAK

-

D452N12E VF

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 1200V 710A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存6,160

-

VS-SD600N12PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 600A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 180°C

封裝: B-8

庫存7,136

1200V

600A

1.31V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 1200V

-

Chassis, Stud Mount

B-8

-40°C ~ 180°C

R7220406HSOO

Powerex Inc.

DIODE MODULE 400V 650A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 650A
Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封裝: DO-200AB, B-PUK

庫存3,296

400V

650A

2.05V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 400V

-

Chassis Mount

DO-200AB, B-PUK

-

1N3265

Powerex Inc.

DIODE GEN PURP 300V 160A DO205AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 160A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12mA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-205AB, DO-9, Stud

庫存6,848

300V

160A

-

Standard Recovery >500ns, > 200mA (Io)

-

12mA @ 300V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 175°C

JANTXV1N5550US

Microsemi Corporation

DIODE GEN PURP 200V 5A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C

封裝: SQ-MELF, B

庫存6,704

200V

5A

1.2V @ 9A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 200V

-

Surface Mount

SQ-MELF, B

D-5B

-65°C ~ 175°C

1N5809US.TR

Semtech Corporation

D MET 6A SFST 100V SM T&R

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

庫存3,232

-

NGTD17R120F2SWK

ON Semiconductor

DIODE GEN PURP 1.2KV DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 35A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 175°C (Max)

封裝: Die

庫存4,512

1200V

-

1.8V @ 35A

-

1µA @ 1200V

-

Surface Mount

Die

175°C (Max)

SRAF10150 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 10A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2 Full Pack

庫存2,432

150V

10A

950mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SB380-T

Diodes Incorporated

DIODE SCHOTTKY 80V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AD, Axial

庫存5,104

80V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 80V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

UG4D-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-201AD, Axial

庫存4,080

200V

4A

950mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 200V

20pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

AR1PDHM3/84A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-220AA

庫存7,648

200V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 200V

12.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

RS1PB-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-220AA

庫存216,000

100V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

1µA @ 100V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

1N4001GHA0G

TSC America Inc.

DIODE, 1A, 50V, AEC-Q101, DO-204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存7,232

50V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S3G-E3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

庫存678,960

400V

3A

1.15V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 400V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

STTH1L06UFY

STMicroelectronics

DIODE ULT FAST 600V 1A SMBFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB Flat Leads
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C

封裝: DO-214AA, SMB Flat Leads

庫存60,000

600V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

1µA @ 600V

-

Surface Mount

DO-214AA, SMB Flat Leads

SMBflat

-40°C ~ 175°C

U1D-M3/5AT

Vishay Semiconductor Diodes Division

DIODE RECT 1A 200V DO-214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 6.8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存158,910

200V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

5µA @ 200V

6.8pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SFAF2004G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存3,000

200 V

20A

975 mV @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

170pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

IDT04S60C

Infineon Technologies

RECTIFIER DIODE, SCHOTTKY

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

600 V

3A

2.4 V @ 3 A

No Recovery Time > 500mA (Io)

0 ns

15 µA @ 600 V

60pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2

-55°C ~ 175°C

WNSC5D106506Q

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 323pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

650 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

323pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

FR601B-G

Comchip Technology

DIODE GEN PURP 50V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

6A

1.3 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 50 V

100pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

1N3743R

Microchip Technology

DIODE GP REV 1.2KV 275A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C

封裝: -

Request a Quote

1200 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 1200 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 190°C

RB521S-40GTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

GSMBR0540

Good-Ark Semiconductor

DIODE, SCHOTTKY, 500MA, 40V, SOD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

封裝: -

庫存17,619

40 V

500mA

550 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 40 V

30pF @ 4V, 1MHz

Surface Mount

SOD-123

125°C

HS3D-K-M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 53pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

200 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 200 V

53pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SS35HT-TP

Micro Commercial Co

DIODE SCHOTTKY 50V 3A SOD123HT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123HT
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

50 V

3A

700 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 50 V

160pF @ 4V, 1MHz

Surface Mount

SOD-123T

SOD-123HT

-55°C ~ 150°C