頁 295 - 二極體 - 整流器 - 單 | 離散半導體產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com 86-755-83210559-841
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

二極體 - 整流器 - 單

記錄 52,788
頁  295/1,886
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK12E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 20V 1A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMBJ)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-214AA, SMB
庫存7,200
20V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMBJ)
-65°C ~ 175°C
R9G20212CSOO
Powerex Inc.

DIODE MODULE 200V 1200A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1200A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 75mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
封裝: DO-200AB, B-PUK
庫存7,104
200V
1200A
2.3V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
4µs
75mA @ 200V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
hot BAV20W-7
Diodes Incorporated

DIODE GEN PURP 150V 200MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 150V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: SOD-123
庫存36,000
150V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 150V
5pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
F1842D1200
Crydom Co.

DIODE MODULE 1.2KV 40A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 40A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 120A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封裝: Module
庫存4,112
1200V
40A (DC)
1.4V @ 120A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis Mount
Module
Module
-
S16B
GeneSiC Semiconductor

DIODE GEN PURP 100V 16A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-203AA, DO-4, Stud
庫存7,280
100V
16A
1.1V @ 16A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
-
-65°C ~ 175°C
FES8FTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: TO-220-2
庫存7,120
300V
8A
1.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
hot 5822SMJE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 3A SMCJ

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMCJ (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存120,000
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5mA @ 40V
-
Surface Mount
DO-214AB, SMC
SMCJ (DO-214AB)
-55°C ~ 150°C
SDT8A100P5-7D
Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: PowerDI? 5
庫存7,168
100V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-55°C ~ 150°C
S3A-M3/57T
Vishay Semiconductor Diodes Division

DIODE GPP 3A 50V DO-214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存3,968
50V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 50V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
hot GP10M-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-204AL, DO-41, Axial
庫存108,000
1000V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1000V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot MUR415RLG
ON Semiconductor

DIODE GEN PURP 150V 4A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-201AD, Axial
庫存380,856
150V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
-
Through Hole
DO-201AD, Axial
Axial
-65°C ~ 175°C
MUR405G
ON Semiconductor

DIODE GEN PURP 50V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-201AA, DO-27, Axial
庫存29,400
50V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MR856G
ON Semiconductor

DIODE GEN PURP 600V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: DO-201AA, DO-27, Axial
庫存38,856
600V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
10µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
NSR10T406MX2WT5G
onsemi

DIODE SCHOTTKY 40V 1A 2-X2DFNW

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 74 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 40 V
  • Capacitance @ Vr, F: 255pF @ 1V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-X2DFNW (1.6x0.8)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
40 V
1A
530 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
74 ns
10 µA @ 40 V
255pF @ 1V, 1MHz
Surface Mount, Wettable Flank
2-XDFN
2-X2DFNW (1.6x0.8)
-55°C ~ 150°C
BAS40-00-HE3_A-08
Vishay

DIODE SCHOTTKY 40V 200MA SOT23-3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 30 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 125°C (Max)
封裝: -
Request a Quote
40 V
200mA
1 V @ 50 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
100 nA @ 30 V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
125°C (Max)
SBT1545LSS_AY_00001
Panjit International Inc.

DIODE SCHOTTKY 45V 15A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 460 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 310 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
45 V
15A
460 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
310 µA @ 45 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
STPS560SFY
STMicroelectronics

DIODE SCHOTTKY 60V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存12,438
60 V
5A
560 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
MC5608
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SFA1004GH
Taiwan Semiconductor Corporation

35NS, 10A, 200V, SUPER FAST RECO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存3,000
200 V
10A
975 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
70pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
MGR1201-BP
Micro Commercial Co

DIODE GEN PURP 50V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
50 V
12A
1.1 V @ 12 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
100pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
RB168MM-40TFTR
Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 550 nA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 175°C (Max)
封裝: -
庫存43,818
40 V
1A
650 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
550 nA @ 40 V
-
Surface Mount
SOD-123F
PMDU
175°C (Max)
ER1K-TPS01
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA, HSMB
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: -
Request a Quote
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA, HSMB
-50°C ~ 150°C
G3S06504A
Global Power Technology-GPT

DIODE SIC 650V 11.5A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 11.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 181pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存75
650 V
11.5A
1.7 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
181pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
SR105
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 1A DO204AL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
50 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
HER151G
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1.5A DO204AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
50 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 50 V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SDM20U40Q-13
Diodes Incorporated

DIODE SCHOT 40V 250MA SOD523 10K

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 30 V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: -
庫存27,777
40 V
250mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
10 ns
5 µA @ 30 V
50pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 125°C
SD101CWSHE3-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 15MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 15mA
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 30 V
  • Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
庫存17,880
40 V
15mA
900 mV @ 15 mA
Small Signal =< 200mA (Io), Any Speed
1 ns
200 nA @ 30 V
2.2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
HS2DH
Taiwan Semiconductor Corporation

50NS, 2A, 200V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存18,000
200 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C