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二極體 - 整流器 - 單

記錄 52,788
頁  250/1,886
圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RS3JHE3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: DO-214AB, SMC
庫存4,672
600V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
MP838-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
封裝: DO-204AL, DO-41, Axial
庫存6,816
200V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
1N5402-E3/51
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 150°C
封裝: DO-201AD, Axial
庫存5,584
200V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
hot 1N5818RL
ON Semiconductor

DIODE SCHOTTKY 30V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: DO-204AL, DO-41, Axial
庫存45,600
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 125°C
1N4048
Powerex Inc.

DIODE GEN PURP 250V 275A DO205AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 275A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 250V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB, DO-9
  • Operating Temperature - Junction: -65°C ~ 190°C
封裝: DO-205AB, DO-9, Stud
庫存4,128
250V
275A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 250V
-
Chassis, Stud Mount
DO-205AB, DO-9, Stud
DO-205AB, DO-9
-65°C ~ 190°C
JAN1N5616US
Microsemi Corporation

DIODE GEN PURP 400V 1A D5A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 500nA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
  • Operating Temperature - Junction: -65°C ~ 200°C
封裝: SQ-MELF, A
庫存6,144
400V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
VS-15ETL06STRRPBF
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A 600V D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 29ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存7,616
600V
15A
2.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
29ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
CMR3U-10 BK
Central Semiconductor Corp

DIODE GEN PURP 1KV 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: DO-214AB, SMC
庫存5,904
1000V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 1000V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
BAT43WTR
SMC Diode Solutions

DIODE SCHOTTKY 30V 200MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: SOD-123
庫存3,568
30V
200mA (DC)
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
RB021VA90TR
Rohm Semiconductor

DIODE SCHOTTKY 90V 200MA TUMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 490mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 900µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, Flat Lead
  • Supplier Device Package: TUMD2
  • Operating Temperature - Junction: 125°C (Max)
封裝: 2-SMD, Flat Lead
庫存2,336
90V
200mA
490mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
900µA @ 90V
-
Surface Mount
2-SMD, Flat Lead
TUMD2
125°C (Max)
hot STTH1R02U
STMicroelectronics

DIODE GEN PURP 200V 1.5A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: 175°C (Max)
封裝: DO-214AA, SMB
庫存735,960
200V
1.5A
1V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
175°C (Max)
hot MMSD459A
Fairchild/ON Semiconductor

DIODE GEN PURP SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C (Max)
封裝: SOD-123
庫存36,000
-
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface Mount
SOD-123
SOD-123
150°C (Max)
SCS206AJTLL
Rohm Semiconductor

DIODE SCHOTTKY 650V 6A TO263AB

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 120µA @ 600V
  • Capacitance @ Vr, F: 219pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 175°C (Max)
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存32,130
650V
6A (DC)
1.55V @ 6A
No Recovery Time > 500mA (Io)
0ns
120µA @ 600V
219pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
175°C (Max)
JANTX1N5819UR-1-TR
Microchip Technology

DIODE SCHOTTKY 45V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 45 V
  • Capacitance @ Vr, F: 70pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
  • Operating Temperature - Junction: -65°C ~ 125°C
封裝: -
Request a Quote
45 V
1A
490 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 45 V
70pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB (MELF, LL41)
-65°C ~ 125°C
JANTXV1N6910UTK2AS-TR
Microchip Technology

DIODE SCHOTTKY 15V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 15 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 15 V
  • Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
15 V
25A
520 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 15 V
2000pF @ 5V, 1MHz
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
70HFR160
Solid State Inc.

DIODE GEN PURP 1.6KV 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 70 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
Request a Quote
1600 V
70A
1.3 V @ 70 A
Standard Recovery >500ns, > 200mA (Io)
-
200 µA @ 1600 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
UFR3015R
Microchip Technology

DIODE GEN PURP 150V 30A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 200 V
  • Capacitance @ Vr, F: 140pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: 175°C (Max)
封裝: -
Request a Quote
150 V
30A
975 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
15 µA @ 200 V
140pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
175°C (Max)
VS-MBRB1045TRLHM3
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 45 V
  • Capacitance @ Vr, F: 600pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
45 V
10A
840 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 45 V
600pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-55°C ~ 150°C
RL103GP-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: A-405
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
200 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 200 V
15pF @ 4V, 1MHz
Through Hole
Axial
A-405
-55°C ~ 150°C
ES2JALH
Taiwan Semiconductor Corporation

35NS, 2A, 600V, SUPER FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 21pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: Thin SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存42,000
600 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 600 V
21pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
Thin SMA
-55°C ~ 150°C
BAS16THVL
Nexperia USA Inc.

DIODE GP 100V 215MA TO236AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 215mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB
  • Operating Temperature - Junction: 175°C (Max)
封裝: -
庫存159,243
100 V
215mA
1.25 V @ 150 mA
Fast Recovery =< 500ns, > 200mA (Io)
4 ns
500 nA @ 80 V
1.5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
175°C (Max)
CMR2U-01-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 100V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
庫存249
100 V
2A
1 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 100 V
28pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
UF1510G_R2_00001
Panjit International Inc.

DIODE GEN PURP 1KV 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
1000 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
1 µA @ 1000 V
25pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
FESB16JTHE3_A-P
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 16A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 145pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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600 V
16A
1.5 V @ 16 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 600 V
145pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 150°C
TVR06K-E3-73
Vishay General Semiconductor - Diodes Division

DIODE GP 800V 600MA DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封裝: -
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800 V
600mA
1.4 V @ 600 mA
Standard Recovery >500ns, > 200mA (Io)
300 µs
10 µA @ 800 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
SK32_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 20 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 125°C
封裝: -
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20 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 20 V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 125°C
HS3FH
Taiwan Semiconductor Corporation

50NS, 3A, 300V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 300 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
庫存9,000
300 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 300 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
JANKCA1N5712
Microchip Technology

DIODE SCHOTTKY 20V 75MA DO35

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20 V
  • Current - Average Rectified (Io): 75mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 nA @ 16 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 150°C
封裝: -
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20 V
75mA
1 V @ 35 mA
Small Signal =< 200mA (Io), Any Speed
-
150 nA @ 16 V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 150°C