二極體 - 整流器 - 單

EGP10AHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 22pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

MBRM120ET1

ON Semiconductor

DIODE SCHOTTKY 20V 1A POWERMITE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: Powermite
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-216AA

MBRF40250T

ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220FP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 30µA @ 250V
• Capacitance @ Vr, F: 500pF @ 5V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-3 Full Pack

1N4933RL

ON Semiconductor

DIODE GEN PURP 50V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

186NQ200-1

SMC Diode Solutions

DIODE SCHOTTKY 200V 180A PRM1-1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 180A
• Voltage - Forward (Vf) (Max) @ If: 1.12V @ 180A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5mA @ 200V
• Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: HALF-PAK
• Supplier Device Package: PRM1-1 (Half Pak Module)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: HALF-PAK

JAN1N6630US

Microsemi Corporation

DIODE GEN PURP 900V 1.4A E-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 900V
• Current - Average Rectified (Io): 1.4A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 2µA @ 900V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: SQ-MELF, E

VS-41HF100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 40A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 9mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 190°C

封裝: DO-203AB, DO-5, Stud

MBR1635HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A TO220AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: TO-220-3

EU 2AV

Sanken

DIODE GEN PURP 600V 1A AXIAL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 400ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: Axial
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: Axial

VS-10BQ040-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: 115pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

FSV1550V

Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 15A TO277-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 510mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 320µA @ 50V
• Capacitance @ Vr, F: 824pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277-3
• Operating Temperature - Junction: -55°C ~ 155°C

封裝: TO-277, 3-PowerDFN

VS-150K30A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A DO205AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 35mA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 200°C

封裝: DO-205AA, DO-8, Stud

IDM08G120C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 40µA @ 1200V
• Capacitance @ Vr, F: 365pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-2
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-1EFH01-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A SMF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 16ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-219AB

SK55C-V7G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 5A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 50 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

PMEG6045ETP-QX

Nexperia USA Inc.

DIODE SCHOT 60V 4.5A SOD128/CFP5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 4.5A
• Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20 ns
• Current - Reverse Leakage @ Vr: 400 µA @ 60 V
• Capacitance @ Vr, F: 575pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128/CFP5
• Operating Temperature - Junction: 175°C

封裝: -

SF24G-AP

Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

HER101BULK

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 50V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: -

Request a Quote

SDUR60Q60WT

SMC Diode Solutions

DIODE GEN PURP 600V 30A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

SK52LHE3-TP

Micro Commercial Co

Interface

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 20 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC (DO-214AB)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

PMEG4030ETR-QX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD123W

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Capacitance @ Vr, F: 250pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: 175°C

封裝: -

RBQ5RSM65BTL1

Rohm Semiconductor

DIODE SCHOTTKY 65V 5A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 65 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 90 µA @ 65 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 150°C

封裝: -

1N4248US

Microchip Technology

DIODE GEN PURP 800V 1A MELF-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF
• Supplier Device Package: MELF-1
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

1N5550US-TR

Microchip Technology

DIODE GEN PURP 200V 3A B SQ-MELF

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2 µs
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

IV1D06006P3

Inventchip

DIODE SIC 650V 16.7A TO252-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 16.7A
• Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 650 V
• Capacitance @ Vr, F: 224pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-3
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

S20100

Microchip Technology

DIODE GEN PURP 1KV 16A DO203AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-203AA (DO-4)
• Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

NXPSC106506Q

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220AC

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 250 µA @ 650 V
• Capacitance @ Vr, F: 300pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

封裝: -

R1200-TP

Micro Commercial Co

DIODE GEN PURP 1.2KV 500MA DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote