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MBRH30035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A D67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: D-67

SB360A-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-201AD, Axial

V12P10-E3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 12A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: TO-277, 3-PowerDFN

BY329X-1200,127

NXP

DIODE GEN PURP 1.2KV 8A TO220F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 145ns
• Current - Reverse Leakage @ Vr: 1mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220FP
• Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2 Full Pack, Isolated Tab

MBR7100HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 7.5A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 7.5A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 7.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

UD1006FR-H

ON Semiconductor

DIODE GEN PURP 600V 10A TO220-2

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: -
• Operating Temperature - Junction: 150°C (Max)

封裝: TO-220-2

LSM535GE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 35V 5A DO215AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 35V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-215AB, SMC Gull Wing

AR4PM-M3/86A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.8A TO277

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Capacitance @ Vr, F: 55pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-277, 3-PowerDFN

UG54GHR0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 200V, 20N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 20ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-201AD, Axial

RB055LA-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDT
• Operating Temperature - Junction: 150°C (Max)

封裝: SOD-128

SDURF560A

SMC Diode Solutions

DIODE GEN PURP 600V 5A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: TO-220-2

SS3P3HM3J/84A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 30V DO-220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-220AA

US1B-M3/5AT

Vishay Semiconductor Diodes Division

DIODE 1A 100V 50NS DO-214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

SS26S-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 60V DO-214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-214AC, SMA

UF1K R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 17pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

FR156GHB0G

TSC America Inc.

DIODE, FAST, 1.5A, 800V, 500NS,

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-204AC, DO-15, Axial

1SS400-G

Comchip Technology

DIODE GEN PURP 80V 100MA SOD523

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 80V
• Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: 125°C (Max)

封裝: SC-79, SOD-523

VS-70HFR40

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 70A DO203AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

STTH80S06W

STMicroelectronics

DIODE TURBO2 600V 80A DO247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-247-2 (Straight Leads)
• Supplier Device Package: DO-247
• Operating Temperature - Junction: -40°C ~ 175°C

封裝: DO-247-2 (Straight Leads)

MMSD103T1G

ON Semiconductor

DIODE GEN PURP 250V 200MA SOD123

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 250V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: SOD-123

1N2230

Microchip Technology

DIODE GEN PURP 200V 5A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4 (DO-203AA)
• Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

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SDS065J016H3-ISATH

Luminus Devices Inc.

DIODE 650V-16A TO247-2L

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 44A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 48 µA @ 650 V
• Capacitance @ Vr, F: 837pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2L
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

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ES1GFL

Taiwan Semiconductor Corporation

35NS, 1A, 400V, SUPER FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

FT2000KG

Diotec Semiconductor

IC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 960 mV @ 20 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -50°C ~ 150°C

封裝: -

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DSA10IM100UC-TRL

IXYS

DIODE SCHOTTKY 100V 10A TO252AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 100 V
• Capacitance @ Vr, F: 68pF @ 24V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

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S1A_R1_00001

Panjit International Inc.

DIODE GEN PURP 50V 1A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 50 V
• Capacitance @ Vr, F: 12pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

V3N103HM3-H

Vishay

3A, 100V, DFN3820A TRENCH SKY RE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 100 V
• Capacitance @ Vr, F: 410pF @ 4V, 1MHz
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 2-VDFN
• Supplier Device Package: DFN3820A
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

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JAN1N5195

Microchip Technology

DIODE GEN PURP 180V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 180 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-204AH (DO-35)
• Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

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