頁 1009 - 二極體 - 整流器 - 單 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CN646 TR	Central Semiconductor Corp	DIODE GP 300V 400MA DO-41SP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 300V Capacitance @ Vr, F: 11pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-204AL, DO-41, Axial	庫存7,456	300V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	200nA @ 300V	11pF @ 12V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
LLSD101A-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 15MA MINIMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-213AC, MINI-MELF, SOD-80	庫存2,896	60V	15mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 50V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-55°C ~ 150°C
1N4448_T26A	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	封裝: DO-204AH, DO-35, Axial	庫存3,392	100V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
SDM10P45-7	Diodes Incorporated	DIODE SCHOTTKY 45V 100MA SOT523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523 Operating Temperature - Junction: -40°C ~ 125°C	封裝: SOT-523	庫存3,584	45V	100mA (DC)	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	6pF @ 10V, 1MHz	Surface Mount	SOT-523	SOT-523	-40°C ~ 125°C
S70G	GeneSiC Semiconductor	DIODE GEN PURP 400V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	封裝: DO-203AB, DO-5, Stud	庫存3,280	400V	70A	1.1V @ 70A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
SL22HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 395mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封裝: DO-214AA, SMB	庫存6,576	20V	2A	395mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
U3C-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 2A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AB, SMC	庫存3,504	150V	2A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ES2A M4G	TSC America Inc.	DIODE, SUPER FAST, 2A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AA, SMB	庫存7,792	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
BYG21MHM2G	TSC America Inc.	DIODE, FAST, 1.5A, 1000V, 120NS, Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: DO-214AC, SMA	庫存7,856	-	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1PS79SB70,315	Nexperia USA Inc.	DIODE SCHOTTKY 70V 70MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 150°C (Max)	封裝: SC-79, SOD-523	庫存2,208	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
DPG60I300HA	IXYS	DIODE GEN PURP 300V 60A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 1µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存19,008	300V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 300V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
SCS210AGC	Rohm Semiconductor	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封裝: TO-220-2	庫存77,436	650V	10A (DC)	1.55V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	365pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
S2A-HF	Comchip Technology	DIODE GEN PURP 50V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存10,770	50 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4247-TR	Microchip Technology	DIODE GEN PURP 600V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封裝: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
S50480	Microchip Technology	DIODE GP 800V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	800 V	300A	1.25 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 800 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
IDK20G120C5XTMA1	Infineon Technologies	DIODE SIL CARB 1.2KV 56A TO263-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 56A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 123 µA @ 1200 V Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	1200 V	56A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	-	123 µA @ 1200 V	1050pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2-1	-55°C ~ 175°C
S3JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存8,850	600 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 600 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS1FN6HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 1A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 µA @ 60 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	60 V	1A	530 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 60 V	90pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
TSDGLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存41,463	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
SRT110H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	100 V	1A	800 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S4380IL	Microchip Technology	DIODE GEN PURP 800V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封裝: -	Request a Quote	800 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
V8PA10-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 8A DO221BC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 µA @ 100 V Capacitance @ Vr, F: 850pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	庫存210,276	100 V	8A	760 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 100 V	850pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-40°C ~ 150°C
VS-HFA25TB60S-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 25A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	庫存23,067	600 V	25A	2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	20 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
NSB8JTHE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SICPT10120Y-BP	Micro Commercial Co	SCHOTTKY DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 13 µA @ 1.2 kV Capacitance @ Vr, F: 700pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	1200 V	10A	1.54 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	13 µA @ 1.2 kV	700pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
SDURB1530	SMC Diode Solutions	DIODE GEN PURP 300V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	300 V	15A	1.26 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 300 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
PMEG045V050EPEZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 5A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 ns Current - Reverse Leakage @ Vr: 300 µA @ 45 V Capacitance @ Vr, F: 540pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	封裝: -	庫存14,811	45 V	5A	490 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	300 µA @ 45 V	540pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
SR809H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封裝: -	Request a Quote	90 V	8A	920 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 90 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

CN646 TR

Central Semiconductor Corp

DIODE GP 300V 400MA DO-41SP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 300V
Capacitance @ Vr, F: 11pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-204AL, DO-41, Axial

庫存7,456

300V

400mA

1V @ 400mA

Standard Recovery >500ns, > 200mA (Io)

-

200nA @ 300V

11pF @ 12V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

LLSD101A-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 15MA MINIMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-213AC, MINI-MELF, SOD-80

庫存2,896

60V

15mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 50V

-

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-55°C ~ 150°C

1N4448_T26A

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

封裝: DO-204AH, DO-35, Axial

庫存3,392

100V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

5µA @ 75V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

SDM10P45-7

Diodes Incorporated

DIODE SCHOTTKY 45V 100MA SOT523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523
Operating Temperature - Junction: -40°C ~ 125°C

封裝: SOT-523

庫存3,584

45V

100mA (DC)

600mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

6pF @ 10V, 1MHz

Surface Mount

SOT-523

-40°C ~ 125°C

S70G

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

庫存3,280

400V

70A

1.1V @ 70A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 180°C

SL22HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 395mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封裝: DO-214AA, SMB

庫存6,576

20V

2A

395mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

U3C-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AB, SMC

庫存3,504

150V

2A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 150V

25pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

ES2A M4G

TSC America Inc.

DIODE, SUPER FAST, 2A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AA, SMB

庫存7,792

50V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 50V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

BYG21MHM2G

TSC America Inc.

DIODE, FAST, 1.5A, 1000V, 120NS,

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: DO-214AC, SMA

庫存7,856

-

1.5A

1.6V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

120ns

1µA @ 1000V

13pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1PS79SB70,315

Nexperia USA Inc.

DIODE SCHOTTKY 70V 70MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 70V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 150°C (Max)

封裝: SC-79, SOD-523

庫存2,208

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

-

10µA @ 70V

2pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

150°C (Max)

DPG60I300HA

IXYS

DIODE GEN PURP 300V 60A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 1µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存19,008

300V

60A

1.4V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

1µA @ 300V

-

Through Hole

TO-247-2

TO-247

-55°C ~ 175°C

SCS210AGC

Rohm Semiconductor

DIODE SCHOTTKY 650V 10A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封裝: TO-220-2

庫存77,436

650V

10A (DC)

1.55V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

365pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

S2A-HF

Comchip Technology

DIODE GEN PURP 50V 2A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存10,770

50 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N4247-TR

Microchip Technology

DIODE GEN PURP 600V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封裝: -

Request a Quote

600 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

1 µA @ 600 V

-

Through Hole

A, Axial

-65°C ~ 175°C

S50480

Microchip Technology

DIODE GP 800V 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

800 V

300A

1.25 V @ 1000 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 800 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

IDK20G120C5XTMA1

Infineon Technologies

DIODE SIL CARB 1.2KV 56A TO263-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 56A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

1200 V

56A

1.8 V @ 20 A

No Recovery Time > 500mA (Io)

-

123 µA @ 1200 V

1050pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2-1

-55°C ~ 175°C

S3JH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存8,850

600 V

3A

1.15 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 600 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

SS1FN6HM3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 1A DO219AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

60 V

1A

530 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 µA @ 60 V

90pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 150°C

TSDGLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存41,463

400 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

15pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 175°C

SRT110H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A TS-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

100 V

1A

800 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

S4380IL

Microchip Technology

DIODE GEN PURP 800V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封裝: -

Request a Quote

800 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 800 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

V8PA10-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 8A DO221BC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Capacitance @ Vr, F: 850pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

庫存210,276

100 V

8A

760 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 µA @ 100 V

850pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-40°C ~ 150°C

VS-HFA25TB60S-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 25A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

庫存23,067

600 V

25A

2 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

20 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

NSB8JTHE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

Request a Quote

600 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 600 V

55pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

SICPT10120Y-BP

Micro Commercial Co

SCHOTTKY DIODES

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.54 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 13 µA @ 1.2 kV
Capacitance @ Vr, F: 700pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

1200 V

10A

1.54 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

13 µA @ 1.2 kV

700pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

SDURB1530

SMC Diode Solutions

DIODE GEN PURP 300V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

300 V

15A

1.26 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 300 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

PMEG045V050EPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 5A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 ns
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Capacitance @ Vr, F: 540pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C

封裝: -

庫存14,811

45 V

5A

490 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

18 ns

300 µA @ 45 V

540pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C

SR809H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 90V 8A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封裝: -

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90 V

8A

920 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 90 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C