頁 314 - TI TPS Series | 黑森爾電子

零件編號	製造商	描述	封裝	庫存
TPS1101DG4	Texas Instruments	MOSFET P-CH 15V 2.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,008
TPS1100PW	Texas Instruments	MOSFET P-CH 15V 1.27A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 504mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存9,612
TPS1100DG4	Texas Instruments	MOSFET P-CH 15V 1.6A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +2V, -15V FET Feature: - Power Dissipation (Max): 791mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存5,280

TPS1101DG4

Texas Instruments

MOSFET P-CH 15V 2.3A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +2V, -15V
FET Feature: -
Power Dissipation (Max): 791mW (Ta)
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,008

TPS1100PW

Texas Instruments

MOSFET P-CH 15V 1.27A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.27A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +2V, -15V
FET Feature: -
Power Dissipation (Max): 504mW (Ta)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存9,612

TPS1100DG4

Texas Instruments

MOSFET P-CH 15V 1.6A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +2V, -15V
FET Feature: -
Power Dissipation (Max): 791mW (Ta)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存5,280