Transphorm, Inc., a pioneer and global supplier of high-reliability, high-performance Gallium Nitride (GaN) power conversion products, today announced seven reference designs designed to accelerate the development of GaN-based USB-C PD power adapters. The reference design portfolio includes a wide range of open frame design options covering a variety of topologies, outputs and powers (45W to 140W).
Differentiating Advantages of SuperGaN® Technology
The power adapter reference design uses SuperGaN Gen IV 650V FETs, which offer the simplicity of design, high reliability and robust performance that have become synonymous with Transphorm's GaN devices. In a recent comparative analysis, Transphorm's 240 milliohm SuperGaN FETs showed lower on-resistance rises over 75°C compared to 175 milliohms e-mode GaN devices, with a 50% increase in on-resistance. and higher performance at 100% (full) power.
Power Adapter Reference Design
Transphorm's reference design portfolio includes five open-frame USB-C PD reference designs covering frequencies from 140 to 300 kHz. These include a 65W active clamp flyback mode (ACF) reference design developed by Transphorm in partnership with Silanna Semiconductor, which operates at 140kHz and has a peak efficiency of 94.5%.
• (1x) 45W Adapter Reference Design in Quasi-Resonant Flyback Mode (QRF) topology, delivering 24 W/in3 power density
• (3x) 65W Adapter Reference Designs in ACF or QRF Topology, Delivering 30 W/in3 Power Density
•(1x) 100W Adapter Reference Design with Power Factor Correction (PFC)+QRF topology to deliver 18 W/in3 power density
Transphorm's reference design portfolio also includes two open-frame USB-C PD/PPS reference designs covering a frequency range of 110 to 140 kHz. Transphorm partnered with Diodes Inc. to develop both solutions, utilizing the company's ACF controller to achieve peak efficiencies in excess of 93.5 percent.
• (1x) 65W adapter reference design with ACF topology that provides 29 W/in3 power density
•(1x) 140W Adapter Reference Design with PFC+ACF topology that provides 20 W/in3 power density
"Transphorm is uniquely positioned to offer the only combination of GaN FETs that covers a wide range of power levels across a wide range of applications," said Tushar Dhayagude, vice president of field applications and technical sales at Transphorm. "Our power adapter reference design highlights our low Power capability. We offer controller-agnostic PQFN and TO-220 devices that greatly simplify designs. These and other features help customers quickly and easily bring GaN solutions to breakthrough levels of power efficiency to the market. That’s where the value of Transphorm’s GaN devices comes in.”
