Innoscience Technology has an international presence in the US and Europe. Innoscience, headquartered in Suzhou, China, now supports customers by adding design and sales support facilities in Santa Clara, California and Leuven, Belgium.
The company has a comprehensive portfolio of devices ranging from 30V to 650V, with more than 35 million components for applications, including USB PD chargers/adapters, data centers, phones and LED drives. The company is the largest IDM focused entirely on GaN technology. With two fabs, including what is billed as the world's largest dedicated 8-inch silicon-based gallium nitride plant, the company offers the latest, state-of-the-art, high-throughput manufacturing equipment. The company's current capacity of 10,000 8-inch wafers will increase to 14,000 8-inch wafers per month by 2025, and to 70,000 8-inch wafers per month by 2025.
The company manufactures high-performance, normally off GaN FETs in electronic mode. By introducing a stress enhancement layer, RDS(ON) is significantly reduced without affecting other parameters such as threshold voltage and leakage current. Epitaxial and device processing has been optimized for high reproducibility and yield. Parts pass JEDEC standard quality and reliability tests.
Dr Denis Marcon, General Manager of Innoscience Europe commented: "Now is the time to develop GaN, Innoscience is ready to provide GaN to the world. We will outprice anyone else on comparable devices, and our huge manufacturing capacity means our customers can ensure security of supply, which is the biggest concern for people in the current chip shortage. We look forward to working with any company to promote GaN in the global electronics industry."
"This is an exciting time for our customers, who can benefit from Innoscience's application understanding and demo boards to develop their unique solutions," explains Yi Sun, General manager of Innoscience USA. This will enable us to better support our customers in the United States, especially in the Bay Area."
