Power Integrations provides SCALE EV series door drives for Infineon EconoDUAL modules. The drive is available in original, clone and new SiC models for electric vehicles, hybrid and fuel cell vehicles (including buses and trucks), as well as high-power vehicles and traction inverters for construction, mining and agricultural equipment.
The board-level gate driver consists of two reinforcement gate driver channels, associated power supply and monitoring telemetry. The first released family member is the 2SP0215F2Q0C, created for the EconoDUAL 900 A 1200 V IGBT half-bridge module. These new boards are both automotive certified and ASIL B certified, facilitating the realization of ASIL C traction inverter designs.
Peter Vaughan, director of automotive business development at Power Integrations, said: “The design of gate drives is critical to both the performance and reliability of electric vehicles. By offering a product that has been developed, tested and certified, and ASIL certified, we have significantly reduced the Development time and cost.”
The high level of integration offered by the innovative new driver IC allows the entire driver board, including the gate supply, to be fitted to the outline of a power module, while still providing the spacing required for reinforced isolation according to IEC 60664. The ASIC package offers 11.4mm of creepage and clearance and is designed to meet the requirements of 800V vehicle system voltage. The input and output lines of the system microcontroller are connected through two separate on-board connectors to meet functional safety requirements. Each channel requires a 5V supply, and the board itself generates other isolation voltages.
The gate driver series is rated at 1200V for 400V and 800V systems and supports SiC mosfet and silicon igbt. The design features a 5,500-meter elevation rating, optionally with a conformal coating for technical cleaning needs. The design incorporates multiple protection provisions including active short-circuit, active discharge of connected DC link capacitors, overvoltage limitation via active gating, gating monitoring, signal transmission monitoring and on-chip temperature monitoring diagnostic functions, SiC The short circuit and overcurrent response of mosfet is less than 1 microsecond, and the short circuit and overcurrent response of igbt is less than 3 microseconds.
