Six new SiC FETs offer performance and reliability | 黑森爾電子
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Six new SiC FETs offer performance and reliability

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發佈日期: 2022-02-02, United Chemi-Con

   UnitedSiC's expansion of its FET portfolio marks another step in converters in accelerating the migration to SiC for applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV vehicle chargers and DC-DC. Six new 650V and 1200V options are available, all in the industry-standard D2PAK-7L surface-mount package. These latest SiC fets are available in 30, 40, 80 and 150mOhm versions.

   The device supports significantly improved switching speeds, Kelvin source connections for increased gate driver return performance, and industry-leading thermal performance. By using Ag sintering, mold attachment can be done on conventional PCBs and complex insulated metal substrates. They also show excellent leakage and clearance figures of 6.7mm and 6.1mm respectively - indicating maximum operational safety even at high voltages.

    Anup Bhalla, Vice President of Engineering at UnitedSiC said:"With the rapid switching capabilities of these newest FETs, and the superior thermal properties produced by Ag sintering, we continue to bring power designers advantages in terms of performance, reliability, size and layout" 

   The company's FEt-Jet Calculator fully supports these new devices. Using this free online resource, engineers can evaluate the different operating parameters required for their applications, perform detailed performance comparisons, and then quickly and confidently determine which is the best SiC solution for their design needs.

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