Onsemi, a leader in intelligent power and intelligent sensing technology, released the world's first To-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET at PCIM Europe. This transistor addresses the rapidly growing demand for high-performance switching devices suitable for high power density designs. Until recently, SiC devices have been available in D2PAK 7-pin packages that require significantly more space.
The TOLL package measures only 9.90 mm x 11.68 mm, saving 30% of the PCB area compared to the D2PAK package. Moreover, its profile is only 2.30 mm, which is 60% smaller than the D2PAK package.
In addition to the smaller size, the TOLL package offers better thermal performance and lower package inductance (2 nH) than the D2PAK 7-pin. Its Kelvin source configuration ensures lower gate noise and switching losses – including a 60% reduction in conduction loss (EON) compared to devices without Kelvin configuration, ensuring that in challenging power supply designs Can significantly improve energy efficiency and power density, as well as improve electromagnetic interference (EMI) and easier PCB design.
Asif Jakwani, senior vice president and general manager of ON Semiconductor's Advanced Power Division, said: "The ability to provide highly reliable power supply designs in a small space is becoming a competitive advantage in many fields, including industrial, high-performance power and server applications. The best SiC MOSFET is packaged in a TOLL package, which not only reduces space, but also enhances performance in many aspects, such as EMI and loss reduction, providing the market with highly reliable and robust high-performance switching devices, which will help power designers solve their problems. Rigorous power design challenges.”
SiC devices offer distinct advantages over their silicon predecessors, including enhanced high-frequency energy efficiency, lower EMI, higher temperature operation, and greater reliability. ON Semiconductor is the only SiC solution provider with vertical integration capabilities, including SiC ball growth, substrate, epitaxy, wafer fabrication, best-in-class integrated modules and discrete packaging solutions.
The NTBL045N065SC1 is the first SiC MOSFET in a TOLL package for demanding applications including switch mode power supplies (SMPS), server and telecom power supplies, solar inverters, uninterruptible power supplies (UPS) and energy storage. The device is suitable for designs that need to meet the most challenging energy efficiency standards, including ErP and 80 PLUS Titanium energy efficiency standards.
The NTBL045N065SC1 has a VDSS rating of 650 V, a typical RDS(on) of only 33 mΩ, and a maximum power consumption (ID) of 73 A. Based on Wide Bandgap (WBG) SiC technology, the device operates at a maximum temperature of 175°C and has an ultra-low gate charge (QG(tot) = 105 nC), which significantly reduces switching losses. In addition, the TOLL package is guaranteed to be Moisture Sensitivity Level 1 (MSL1) to ensure reduced failure rates in mass production.
In addition, ON Semiconductor also offers automotive grade devices, including TO-247 3-pin, 4-pin and D2PAK 7-pin packages.
