Electrification is driving growth in SiC semiconductors, with large market segments such as electric vehicles, sustainability and industrial turning to SiC power solutions due to their fast switching capabilities, lower power losses and higher temperature performance. To help power design engineers make an easy, fast and secure transition to SiC power solutions, Microchip Technology has introduced MPLAB® SiC Power simulator that quickly evaluates Microchip SiC power devices and modules in various topologies before implementing the design into hardware.
"Customers pursuing SiC technology can now benchmark designs and select the best fit of Microchip SiC products using the web-based MPLAB SiC power simulator," said Clayton Pillion, vice president of Microchip's Silicon Carbide business unit. With more than two decades of expertise in silicon carbide, Microchip can provide customers with a wide variety of SiC power solutions, and can easily use other Microchip supporting devices for design."
Microchip's SiC portfolio includes SIC products with the lowest parasitic inductance (< 2.9 nH) of industry leading power modules and industry leading 3.3 kV split MosFETs and diodes with the highest current rating. Other products in the portfolio include 700V, 1200V and 1700V bare chips, discrete devices and modules, and AgileSwitch configurable digital grid drivers.
By providing a comprehensive SiC assessment, the new tool can not only provide valuable benchmark data, but also reduce component selection time, thereby speeding product time to market. If a power electronics designer chooses a three-phase active front end converter between a 25 mΩ and a 40 mΩ SiC mosFETs, simulation results such as the device's average power dissipation and peak junction temperature are immediately available.
The MPLAB SiC Power simulator is an important design tool for Oems to design power systems for e-mobility, sustainability and industrial applications, including electric vehicles, on-board/off-board charging, power and battery storage systems. These SiC devices are durable and have excellent performance, providing an estimated grid oxide life of over 100 years and no degraded body diodes. In high-power applications, SiC technology offers higher system efficiency, power density, and temperature stability than silicon insulated gate bipolar transistors (IGBTs).
