IXYS' 1000 V superjunction x-class HiPerFET power MOSFET power semiconductor product line, now part of Littelfuse, is optimized for soft-switching power conversion applications. Their on-resistance and gate charge are as low as 66 milliohms and 113 nanoohms, respectively. Ideally suited applications include high efficiency, high power density applications such as resonant mode power supplies, AC and DC motor drives, DC-DC converters, robotics and servo controls, smart meters, renewable energy inverters, welding inverters and battery charger.
The 1000v device developed using the charge compensation principle and proprietary process technology features ultra-low on-resistance, low gate charge and superior dv/dt performance. Their avalanche capability enhances their robustness against device failure caused by voltage transients and accidental turn-on of parasitic bipolar transistors. Additionally, these superjunction MOSFETs help improve efficiency due to fast body diodes. Each MOSFET can replace multiple high on-resistance devices in parallel, simplifying design, improving reliability, and saving costs.
The 1000 V x-class power mosfets feature high strength body diodes and are available in international standard size packages TO-247, PLUS247, TO-268HV, SOT-227, TO-264 and PLUS264. Part numbers include IXFH26N100X, IXFT32N100X, IXFK52N100X and IXFN74N100X, currently rated at 26 A, 32 A, 52 A and 74 A, respectively.
