The IR2011 is a high-power, high-speed power MOSFET driver with a separate high-low side reference output channel. Logic input compatible with standard CMOS or LSTTL output, as low as 3.0V logic. The output driver has a high pulse current buffer stage designed for minimal driver cross conduction. Propagation delay matching to simplify use in high frequency applications.
A floating channel can be used to drive a high-side configuration of N-channel power mosFETs that operate at up to 200 volts. Proprietary HVIC and latch-immune CMOS technology enable a rugged overall structure.
IR2011 Typical Connection Diagram
Lead Assignments
IR2011 Functional Block Diagram
Timing Diagram
Features
● Floating channel designed for bootstrap operation
● Fully the operational to 200 v
● Tolerant to negative transient voltage, dV/dt immune
● Gate drive supply range from 10 to 20 v
● Independent low and high side channels
● Input logic HIN/LIN active high
● Undervoltage lockout for both channels
● 3.3 V and 5 V logic compatible
● CMOS Schmitt triggered - inputs with the pull - down
● Matched the propagation delay for both channels
