Magnachip Semiconductor has released a new 24V MOSFET wireless headset battery. Compared to earlier versions, the new device features a 30% increase in core cell density, along with an improved core cell, termination and source pad design, reducing RDS(on) by 24%. The new MOSFETs meet the goals of battery designers to extend battery life by reducing conduction losses after fast charging.
The device has ESD protection function, can suppress abnormal voltage exceeding 5V, can withstand 2kV ESD at most, and has strong circuit protection ability. Through these characteristics, the 24V MOSFET can prolong the life of the battery of the earphone. In addition, the conduction loss during charging and discharging is greatly reduced, and the overall protection efficiency of the battery circuit is improved.
"After releasing three low-voltage MOSFETs to meet the stringent requirements of smartphone batteries, Magnachip has developed this 24V MOSFET with excellent performance," said YJ Kim, Magnachip's CEO. "We once again demonstrate with this new product Building on our technology leadership, we look forward to expanding our portfolio of battery-powered devices in the near future with the introduction of 24V mosfets for VR glasses and wearables."
