Diodes Inc. – New gate drivers provide switching for half / full-bridge power MOSFETs and IGBTs | 黑森爾電子
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Diodes Inc. – New gate drivers provide switching for half / full-bridge power MOSFETs and IGBTs

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發佈日期: 2016-05-03, Diodes Incorporated
Diodes Incorporated's new series of six half-bridge and six high-side / low-side 600V gate drivers provide an easy way to switch power MOSFETs and IGBTs in half-bridge and full-bridge configurations. Target applications include drive motors for white goods, industrial automation systems, and battery-powered vehicles such as electric bicycles and drones. They are also ideal for power supplies above 600W and inverters for fuel cell, solar and wind applications. The floating high-side driver enables bootstrap operation up to 600V. This allows the device to be used on high voltage rails commonly found in motor drives and power supplies. The high peak current drive capability ensures fast switching of the MOSFET or IGBT, providing higher efficiency at high frequency operation. Logic-compatible inputs down to 3.3V further simplify the interface between the controller and the power switch. To protect the MOSFET / IGBT from shoot-through, all devices have matching delays, and the half-bridge driver has a preset internal dead time. Additional self-protection features include: Schmitt input to avoid false triggering; gate drive to withstand negative transients caused by high dV / dt switching; and undervoltage lockout (UVLO) to avoid low power Failure under voltage conditions. The company said that the DGD21xx series is available in SO-8 and SO-16 packages and is pin compatible with other sources.